Electrical and optical properties of defects in silicon introduced by high-temperature electron irradiation

1988 ◽  
Vol 38 (5) ◽  
pp. 3395-3399 ◽  
Author(s):  
Jian-Guo Xu ◽  
Fang Lu ◽  
Heng-Hui Sun
Keyword(s):  
Optical Properties ◽  
High Temperature ◽  
Electron Irradiation ◽  
Electrical And Optical Properties ◽  
Temperature Electron

scholarly journals Efficient conversion of nitrogen to nitrogen-vacancy centers in diamond particles with high-temperature electron irradiation

Carbon ◽  
2020 ◽  
Vol 170 ◽  
pp. 182-190
Author(s):  
Yuliya Mindarava ◽  
Rémi Blinder ◽  
Christian Laube ◽  
Wolfgang Knolle ◽  
Bernd Abel ◽  
...  
Keyword(s):  
High Temperature ◽  
Electron Irradiation ◽  
Nitrogen Vacancy ◽  
Efficient Conversion ◽  
Diamond Particles ◽  
Nitrogen Vacancy Centers ◽  
Temperature Electron

Ternary Bismuth Chalcogenides for Thermoelectric Applications. Synthesis and Charge Transport Properties of New Compounds in the K-BI-S System.

1995 ◽  
Vol 410 ◽  
Author(s):  
Mercouri G. Kanatzidis ◽  
Timothy J. McCarthy ◽  
Troy A. Tanzer ◽  
Li-H. Chen ◽  
Tim Hogan ◽  
...  
Keyword(s):  
Optical Properties ◽  
High Temperature ◽  
Charge Transport ◽  
Three Dimensional ◽  
Bismuth Atom ◽  
Electrical And Optical Properties ◽  
Bismuth Chalcogenides ◽  
Dimensional Network ◽  
Ternary Sulfide ◽  
New Compounds

ABSTRACTKBi6.33S10 and K2Bi8S13 were synthesized by the direct combination of K2S/Bi2S3 at high temperature (>700°C). The reaction of K2S/3.3Bi2S3 at 800°C revealed the presence of a new ternary sulfide KBi6.33S10 (I) (92% yield). The structure consists of blocks of Bi2Te3 and Cdl2-type units that are connected to form a three-dimensional network with K+ ions located in the channels that run along the b-axis. The same reaction but with a different ratio, at 750°C, gave the new ternary sulfide K2Bi8S13 (II) (94% yield). The structure of the shiny rod-like crystals is closely related to that of I. As in I, it also consists of Bi2Te3 and Cdl2-type fragments that connect to form K+-filled channels. The two potassium atoms and one bismuth atom are disordered over three sites. Some preliminary electrical and optical properties of these materials are discussed.

scholarly journals Influence of Electron Irradiation on the Structural Electrical and Optical Properties of ITO/Ti bi-layered Films

2015 ◽  
Vol 28 (6) ◽  
pp. 310-314
Author(s):  
Hyun-Joo Moon ◽  
Jae-Hyun Jeon ◽  
Young-Hwan Song ◽  
Jung-Hyun Oh ◽  
Tae-Kyung Gong ◽  
...  
Keyword(s):  
Optical Properties ◽  
Electron Irradiation ◽  
Electrical And Optical Properties

Electrical and optical properties improvement of GeSn layers formed at high temperature under well-controlled Sn migration

2017 ◽  
Vol 70 ◽  
pp. 139-144 ◽  
Author(s):  
Noriyuki Taoka ◽  
Giovanni Capellini ◽  
Viktoria Schlykow ◽  
Michele Montanari ◽  
Peter Zaumseil ◽  
...  
Keyword(s):  
Optical Properties ◽  
High Temperature ◽  
Electrical And Optical Properties

Electrical and optical properties improvement of GeSn layers formed at high temperature under well-controlled Sn migration

2017 ◽  
Vol 57 ◽  
pp. 48-53 ◽  
Author(s):  
Noriyuki Taoka ◽  
Giovanni Capellini ◽  
Viktoria Schlykow ◽  
Michele Montanari ◽  
Peter Zaumseil ◽  
...  
Keyword(s):  
Optical Properties ◽  
High Temperature ◽  
Electrical And Optical Properties

Electron irradiation effects on electrical and optical properties of sol-gel prepared ZnO films

2010 ◽  
Vol 108 (4) ◽  
pp. 043513 ◽  
Author(s):  
J. S. Bhat ◽  
A. S. Patil ◽  
N. Swami ◽  
B. G. Mulimani ◽  
B. R. Gayathri ◽  
...  
Keyword(s):  
Optical Properties ◽  
Electron Irradiation ◽  
Sol Gel ◽  
Zno Films ◽  
Irradiation Effects ◽  
Electrical And Optical Properties

Impact of high temperature electron irradiation on characteristics of power SiC Schottky diodes

2021 ◽  
Vol 185 ◽  
pp. 109514
Author(s):  
A.A. Lebedev ◽  
V.V. Kozlovski ◽  
M.E. Levinshtein ◽  
A.E. Ivanov ◽  
K.S. Davydovskaya ◽  
...  
Keyword(s):  
High Temperature ◽  
Electron Irradiation ◽  
Schottky Diodes ◽  
Temperature Electron
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