Electron irradiation effects on electrical and optical properties of sol-gel prepared ZnO films

2010 ◽  
Vol 108 (4) ◽  
pp. 043513 ◽  
Author(s):  
J. S. Bhat ◽  
A. S. Patil ◽  
N. Swami ◽  
B. G. Mulimani ◽  
B. R. Gayathri ◽  
...  
Keyword(s):  
Optical Properties ◽  
Electron Irradiation ◽  
Sol Gel ◽  
Zno Films ◽  
Irradiation Effects ◽  
Electrical And Optical Properties

The impact of different ZnO growth methods on the electrical and optical properties of a n-ZnO/p-GaN:Mg/c-plane sapphire UV LED

RSC Advances ◽  
2014 ◽  
Vol 4 (26) ◽  
pp. 13593-13600 ◽  
Author(s):  
Songül Fiat Varol ◽  
Derya Şahin ◽  
Michael Kompitsas ◽  
Güven Çankaya
Keyword(s):  
Optical Properties ◽  
Sol Gel ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Films ◽  
Electrical And Optical Properties ◽  
Uv Led ◽  
Gel Technique ◽  
The Impact ◽  
Growth Methods

ZnO films were successfully grown on GaN/sapphire by Pulsed Laser Deposition (PLD) and the sol–gel technique.

Electrical and optical properties of Sb-doped ZnO thin films synthesized by sol–gel method

2014 ◽  
Vol 23 (4) ◽  
pp. 047805 ◽  
Author(s):  
Meng-Meng Cao ◽  
Xiao-Ru Zhao ◽  
Li-Bing Duan ◽  
Jin-Ru Liu ◽  
Meng-Meng Guan ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Electrical And Optical Properties ◽  
Gel Method ◽  
Sol Gel Method ◽  
Doped Zno

ELECTRICAL AND OPTICAL PROPERTIES OF MULTILAYER SOL GEL ZnO COATINGS

2006 ◽  
Vol 20 (23) ◽  
pp. 3357-3364 ◽  
Author(s):  
TALAAT MOUSSA HAMMAD
Keyword(s):  
Carrier Mobility ◽  
Sol Gel ◽  
Dip Coating ◽  
Free Carrier ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Electrical And Optical Properties ◽  
Zinc Oxide Films ◽  
Free Carrier Density ◽  
Fine Microstructure

Multilayer transparent conducting zinc oxide films have been prepared on boro-silicate substrates by the commercially sol gel dip coating process. Each layer was fired at 550°C in a conventional furnace for 15 min. The final coatings were then tempered under a flux of forming gas ( N 2/ H 2) at 400°C for 2 h. The coatings were characterized by surface stylus profiling and optical spectroscopy (UV-NIR). Results show that (1) ZnO films with electrical resistivity of 6×10-4 Ω· cm , free carrier mobility of approximately 77 cm 2/ V · s and free carrier density of approximately 6.14×1019 cm -3 are obtained for multilayers 310 nm and (2) the transmittance is approximately 60.4% and the reflectance is nearly 34.7% are obtained at a wavelength of 800 nm when the thickness of the ZnO multilayers is 310 nm. The crystal structure and grain orientation of ZnO films were determined by X-ray diffraction. SEM investigations revealed that the surface morphology of growing ZnO films on boro-silicate substrate is dominated by the smooth surface with a fine microstructure.

Electrical and optical properties of ZnO films sequentially implanted with P ions

2011 ◽  
Vol 26 (12) ◽  
pp. 125016 ◽  
Author(s):  
Y H Xue ◽  
X D Zhang ◽  
Y Y Shen ◽  
D C Zhang ◽  
F Zhu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Zno Films ◽  
Electrical And Optical Properties

Effects of As Doping on Properties of ZnO Films

2001 ◽  
Vol 692 ◽  
Author(s):  
K. S. Huh ◽  
D. K. Hwang ◽  
K. H. Bang ◽  
M. K. Hong ◽  
D. H. Lee ◽  
...  
Keyword(s):  
Optical Properties ◽  
Secondary Ion Mass Spectrometry ◽  
Annealing Treatment ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Electrical And Optical Properties ◽  
As Doping ◽  
Dopant Atoms ◽  
Increasing Temperature ◽  
Secondary Ion

AbstractA series of ZnO thin films with various deposition temperatures were prepared on (100) GaAs substrates by radio-frequency magnetron sputtering using ZnO target. The ZnO films were studied by field emission scanning electron microscope(FESEM), x-ray diffraction(XRD), photoluminescence(PL), cathodoluminescence(CL), and Hall measurements. The structural, optical, and electrical properties of the films were discussed as a function of the deposition temperature. With increasing temperature, the compressive stress in the films was released and their crystalline and optical properties were improved. From the depth profile of As measured by secondary ion mass spectrometry(SIMS), As doping was confirmed, and, in order to activate As dopant atoms, post-annealing treatment was performed. After annealing treatment, electrical and optical properties of the films were changed.

Effects of annealing conditions and film thickness on electrical and optical properties of epitaxial Al-doped ZnO films

2016 ◽  
Vol 599 ◽  
pp. 19-26 ◽  
Author(s):  
S. Kuprenaite ◽  
A. Abrutis ◽  
V. Kubilius ◽  
T. Murauskas ◽  
Z. Saltyte ◽  
...  
Keyword(s):  
Optical Properties ◽  
Film Thickness ◽  
Zno Films ◽  
Electrical And Optical Properties ◽  
Annealing Conditions ◽  
Doped Zno
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