Far-infrared response of one-dimensional electronic systems in single- and two-layered quantum wires

1988 ◽  
Vol 38 (17) ◽  
pp. 12732-12735 ◽  
Author(s):  
T. Demel ◽  
D. Heitmann ◽  
P. Grambow ◽  
K. Ploog
Keyword(s):  
Quantum Wires ◽  
Far Infrared ◽  
Electronic Systems ◽  
One Dimensional ◽  
Far Infrared Response

One-dimensional electronic systems in ultra-fine mesa etched InGaAs-InAlAs-InP quantum wires

1990 ◽  
Vol 229 (1-3) ◽  
pp. 256-259 ◽  
Author(s):  
K. Kern ◽  
T. Demel ◽  
D. Heitmann ◽  
P. Grambow ◽  
K. Ploog ◽  
...  
Keyword(s):  
Quantum Wires ◽  
Electronic Systems ◽  
One Dimensional

scholarly journals Engineered spin-orbit interactions in LaAlO3/SrTiO3-based 1D serpentine electron waveguides

2020 ◽  
Vol 6 (48) ◽  
pp. eaba6337
Author(s):  
Megan Briggeman ◽  
Jianan Li ◽  
Mengchen Huang ◽  
Hyungwoo Lee ◽  
Jung-Woo Lee ◽  
...  
Keyword(s):  
Electron Scattering ◽  
Quantum Wires ◽  
Spatial Modulation ◽  
Electronic Systems ◽  
Spin Orbit ◽  
One Dimensional ◽  
Quantum Matter ◽  
Periodic Acceleration ◽  
Tool Set ◽  
Spin Orbit Interactions

The quest to understand, design, and synthesize new forms of quantum matter guides much of contemporary research in condensed matter physics. One-dimensional (1D) electronic systems form the basis for some of the most interesting and exotic phases of quantum matter. Here, we describe a family of quasi-1D nanostructures, based on LaAlO3/SrTiO3 electron waveguides, in which a sinusoidal transverse spatial modulation is imposed. These devices display unique dispersive features in the subband spectra, namely, a sizeable shift (∼7 T) in the spin-dependent subband minima, and fractional conductance plateaus. The first property can be understood as an engineered spin-orbit interaction associated with the periodic acceleration of electrons as they undulate through the nanowire (ballistically), while the second property signifies the presence of enhanced electron-electron scattering in this system. The ability to engineer these interactions in quantum wires contributes to the tool set of a 1D solid-state quantum simulation platform.

Far‐infrared emission from hot quasi‐one‐dimensional quantum wires in GaAs

1995 ◽  
Vol 67 (11) ◽  
pp. 1564-1566 ◽  
Author(s):  
M. Grayson ◽  
D. C. Tsui ◽  
M. Shayegan ◽  
K. Hirakawa ◽  
R. A. Ghanbari ◽  
...  
Keyword(s):  
Quantum Wires ◽  
Far Infrared ◽  
Infrared Emission ◽  
One Dimensional

DC and far-infrared experiments on one-dimensional multi-layered quantum wires

1989 ◽  
Vol 5 (2) ◽  
pp. 287-291 ◽  
Author(s):  
T. Demel ◽  
D. Heitmann ◽  
P. Grambow ◽  
K. Ploog
Keyword(s):  
Quantum Wires ◽  
Far Infrared ◽  
One Dimensional

Theory of ultrasonic attenuation in one and two dimensional metals

1976 ◽  
Vol 54 (14) ◽  
pp. 1454-1460 ◽  
Author(s):  
T. Tiedje ◽  
R. R. Haering
Keyword(s):  
Ultrasonic Attenuation ◽  
Three Dimensional ◽  
Electronic Systems ◽  
Two Dimensional ◽  
Temperature Dependent ◽  
One Dimensional ◽  
The Difference

The theory of ultrasonic attenuation in metals is extended so that it applies to quasi one and two dimensional electronic systems. It is shown that the attenuation in such systems differs significantly from the well-known results for three dimensional systems. The difference is particularly marked for one dimensional systems, for which the attenuation is shown to be strongly temperature dependent.

Magnetization of GaAs quantum wires with quasi one-dimensional electron systems

2004 ◽  
Vol 22 (1-3) ◽  
pp. 729-732 ◽  
Author(s):  
M.A Wilde ◽  
J.I Springborn ◽  
Ch Heyn ◽  
D Heitmann ◽  
D Grundler
Keyword(s):  
Quantum Wires ◽  
Electron Systems ◽  
Dimensional Electron ◽  
One Dimensional

scholarly journals Quantum conductance staircase of holes in silicon nanosandwiches

2019 ◽  
Vol 20 (2) ◽  
pp. 81-98
Author(s):  
N. T. Bagraev ◽  
L. E. Klyachkin ◽  
A. M. Malyarenko ◽  
V. S. Khromov
Keyword(s):  
Kinetic Energy ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Energy Gap ◽  
Point Contact ◽  
Quantum Conductance ◽  
One Dimensional ◽  
Drastic Increase ◽  
Quantum Point ◽  
The One

The results of studying the quantum conductance staircase of holes in one−dimensional channels obtained by the split−gate method inside silicon nanosandwiches that are the ultra−narrow quantum well confined by the delta barriers heavily doped with boron on the n−type Si (100) surface are reported. Since the silicon quantum wells studied are ultra−narrow (~2 nm) and confined by the delta barriers that consist of the negative−U dipole boron centers, the quantized conductance of one−dimensional channels is observed at relatively high temperatures (T > 77 K). Further, the current−voltage characteristic of the quantum conductance staircase is studied in relation to the kinetic energy of holes and their sheet density in the quantum wells. The results show that the quantum conductance staircase of holes in p−Si quantum wires is caused by independent contributions of the one−dimensional (1D) subbands of the heavy and light holes; these contributions manifest themselves in the study of square−section quantum wires in the doubling of the quantum−step height (G0 = 4e2/h), except for the first step (G0 = 2e2/h) due to the absence of degeneracy of the lower 1D subband. An analysis of the heights of the first and second quantum steps indicates that there is a spontaneous spin polarization of the heavy and light holes, which emphasizes the very important role of exchange interaction in the processes of 1D transport of individual charge carriers. In addition, the field−related inhibition of the quantum conductance staircase is demonstrated in the situation when the energy of the field−induced heating of the carriers become comparable to the energy gap between the 1D subbands. The use of the split−gate method made it possible to detect the effect of a drastic increase in the height of the quantum conductance steps when the kinetic energy of holes is increased; this effect is most profound for quantum wires of finite length, which are not described under conditions of a quantum point contact. In the concluding section of this paper we present the findings for the quantum conductance staircase of holes that is caused by the edge channels in the silicon nanosandwiches prepared within frameworks of the Hall. This longitudinal quantum conductance staircase, Gxx, is revealed by the voltage applied to the Hall contacts, Vxy, to a maximum of 4e2/h. In addition to the standard plateau, 2e2/h, the variations of the Vxy voltage appear to exhibit the fractional forms of the quantum conductance staircase with the plateaus and steps that bring into correlation respectively with the odd and even fractional values.

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