Far‐infrared emission from hot quasi‐one‐dimensional quantum wires in GaAs

1995 ◽  
Vol 67 (11) ◽  
pp. 1564-1566 ◽  
Author(s):  
M. Grayson ◽  
D. C. Tsui ◽  
M. Shayegan ◽  
K. Hirakawa ◽  
R. A. Ghanbari ◽  
...  
Keyword(s):  
Quantum Wires ◽  
Far Infrared ◽  
Infrared Emission ◽  
One Dimensional

Far-infrared response of one-dimensional electronic systems in single- and two-layered quantum wires

1988 ◽  
Vol 38 (17) ◽  
pp. 12732-12735 ◽  
Author(s):  
T. Demel ◽  
D. Heitmann ◽  
P. Grambow ◽  
K. Ploog
Keyword(s):  
Quantum Wires ◽  
Far Infrared ◽  
Electronic Systems ◽  
One Dimensional ◽  
Far Infrared Response

DC and far-infrared experiments on one-dimensional multi-layered quantum wires

1989 ◽  
Vol 5 (2) ◽  
pp. 287-291 ◽  
Author(s):  
T. Demel ◽  
D. Heitmann ◽  
P. Grambow ◽  
K. Ploog
Keyword(s):  
Quantum Wires ◽  
Far Infrared ◽  
One Dimensional

Far infrared emission from magnetically quantised 2DEGs in GaAs/(AlGa)As heterojunctions

1994 ◽  
Vol 305 (1-3) ◽  
pp. 280-284 ◽  
Author(s):  
N.N. Zinov'ev ◽  
R. Fletcher ◽  
L.J. Challis ◽  
B. Sujak-Cyrul ◽  
A.V. Akimov ◽  
...  
Keyword(s):  
Far Infrared ◽  
Infrared Emission

Magnetization of GaAs quantum wires with quasi one-dimensional electron systems

2004 ◽  
Vol 22 (1-3) ◽  
pp. 729-732 ◽  
Author(s):  
M.A Wilde ◽  
J.I Springborn ◽  
Ch Heyn ◽  
D Heitmann ◽  
D Grundler
Keyword(s):  
Quantum Wires ◽  
Electron Systems ◽  
Dimensional Electron ◽  
One Dimensional

scholarly journals Far-Infrared Emission from Clumpy Irregular Galaxies

1987 ◽  
Vol 115 ◽  
pp. 647-647
Author(s):  
U. Klein ◽  
J. Heidmann ◽  
R. Wielebinski ◽  
E. Wunderlich
Keyword(s):  
Star Formation ◽  
Star Formation Rate ◽  
Formation Rate ◽  
Hubble Constant ◽  
Far Infrared ◽  
Hii Regions ◽  
Infrared Emission ◽  
Star Forming ◽  
Irregular Galaxies

The four clumpy irregular galaxies Mkr 8, 296,297 and 325 have been observed by IRAS. All galaxies have been detected in at least two of the four detector bands. The ratios of the 100 to 60-m flux densities are comparable to those of HII regions or violently star forming galaxies. The average star formation rate in clumpy irregular galaxies is of the order of a few solar masses per year (based on their average far-infrared luminosity and a Hubble constant of 75 km s−1 Mpc−1.

Energy Sources of the Far‐Infrared Emission of M33

2004 ◽  
Vol 154 (1) ◽  
pp. 259-265 ◽  
Author(s):  
J. L. Hinz ◽  
G. H. Rieke ◽  
K. D. Gordon ◽  
P. G. Perez‐Gonzalez ◽  
C. W. Engelbracht ◽  
...  
Keyword(s):  
Far Infrared ◽  
Infrared Emission ◽  
Energy Sources

scholarly journals Quantum conductance staircase of holes in silicon nanosandwiches

2019 ◽  
Vol 20 (2) ◽  
pp. 81-98
Author(s):  
N. T. Bagraev ◽  
L. E. Klyachkin ◽  
A. M. Malyarenko ◽  
V. S. Khromov
Keyword(s):  
Kinetic Energy ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Energy Gap ◽  
Point Contact ◽  
Quantum Conductance ◽  
One Dimensional ◽  
Drastic Increase ◽  
Quantum Point ◽  
The One

The results of studying the quantum conductance staircase of holes in one−dimensional channels obtained by the split−gate method inside silicon nanosandwiches that are the ultra−narrow quantum well confined by the delta barriers heavily doped with boron on the n−type Si (100) surface are reported. Since the silicon quantum wells studied are ultra−narrow (~2 nm) and confined by the delta barriers that consist of the negative−U dipole boron centers, the quantized conductance of one−dimensional channels is observed at relatively high temperatures (T > 77 K). Further, the current−voltage characteristic of the quantum conductance staircase is studied in relation to the kinetic energy of holes and their sheet density in the quantum wells. The results show that the quantum conductance staircase of holes in p−Si quantum wires is caused by independent contributions of the one−dimensional (1D) subbands of the heavy and light holes; these contributions manifest themselves in the study of square−section quantum wires in the doubling of the quantum−step height (G0 = 4e2/h), except for the first step (G0 = 2e2/h) due to the absence of degeneracy of the lower 1D subband. An analysis of the heights of the first and second quantum steps indicates that there is a spontaneous spin polarization of the heavy and light holes, which emphasizes the very important role of exchange interaction in the processes of 1D transport of individual charge carriers. In addition, the field−related inhibition of the quantum conductance staircase is demonstrated in the situation when the energy of the field−induced heating of the carriers become comparable to the energy gap between the 1D subbands. The use of the split−gate method made it possible to detect the effect of a drastic increase in the height of the quantum conductance steps when the kinetic energy of holes is increased; this effect is most profound for quantum wires of finite length, which are not described under conditions of a quantum point contact. In the concluding section of this paper we present the findings for the quantum conductance staircase of holes that is caused by the edge channels in the silicon nanosandwiches prepared within frameworks of the Hall. This longitudinal quantum conductance staircase, Gxx, is revealed by the voltage applied to the Hall contacts, Vxy, to a maximum of 4e2/h. In addition to the standard plateau, 2e2/h, the variations of the Vxy voltage appear to exhibit the fractional forms of the quantum conductance staircase with the plateaus and steps that bring into correlation respectively with the odd and even fractional values.

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