High-pressure Raman study ofCeO2to 35 GPa and pressure-induced phase transformation from the fluorite structure

1988 ◽  
Vol 37 (8) ◽  
pp. 4250-4253 ◽  
Author(s):  
G. A. Kourouklis ◽  
A. Jayaraman ◽  
G. P. Espinosa
Keyword(s):  
High Pressure ◽  
Phase Transformation ◽  
Fluorite Structure ◽  
Raman Study

A high pressure raman study of ThO2 to 40 GPa and pressure-induced phase transition from fluorite structure

Pramana ◽  
1988 ◽  
Vol 30 (3) ◽  
pp. 225-231 ◽  
Author(s):  
A Jayaraman ◽  
G A Kourouklis ◽  
L G van Uitert
Keyword(s):  
Phase Transition ◽  
High Pressure ◽  
Fluorite Structure ◽  
Raman Study

High-pressure x-ray diffraction study ofCeO2to 70 GPa and pressure-induced phase transformation from the fluorite structure

1988 ◽  
Vol 38 (11) ◽  
pp. 7755-7758 ◽  
Author(s):  
Steven J. Duclos ◽  
Yogesh K. Vohra ◽  
Arthur L. Ruoff ◽  
A. Jayaraman ◽  
G. P. Espinosa
Keyword(s):  
High Pressure ◽  
Phase Transformation ◽  
Diffraction Study ◽  
Fluorite Structure ◽  
X Ray Diffraction ◽  
X Ray

High-Pressure Raman Study of Liquid and Crystalline CH2F2up to 29 GPa

1994 ◽  
Vol 63 (3) ◽  
pp. 934-940 ◽  
Author(s):  
Wu Youhong ◽  
Mitsukazu Onomichi ◽  
Shigeo Sasaki ◽  
Hiroyasu Shimizu
Keyword(s):  
High Pressure ◽  
Raman Study

Elucidating the Phase Transformation and Metallization Behavior of Zinc Phosphide under High Pressure

2021 ◽  
Author(s):  
Yue Tang ◽  
Hao Liang ◽  
Shixue Guan ◽  
Mengyang Huang ◽  
Wenqiang Wang ◽  
...  
Keyword(s):  
High Pressure ◽  
Phase Transformation ◽  
Zinc Phosphide

scholarly journals Pressure-Induced Structural Phase Transition and Metallization in Ga2Se3 up to 40.2 GPa under Non-Hydrostatic and Hydrostatic Environments

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 746
Author(s):  
Meiling Hong ◽  
Lidong Dai ◽  
Haiying Hu ◽  
Xinyu Zhang
Keyword(s):  
Phase Transition ◽  
Electrical Conductivity ◽  
High Pressure ◽  
Phase Transformation ◽  
Transport Properties ◽  
Electrical Transport ◽  
Structural Phase ◽  
Structure Evolution ◽  
Systematic Research ◽  
Electrical Transport Properties

A series of investigations on the structural, vibrational, and electrical transport characterizations for Ga2Se3 were conducted up to 40.2 GPa under different hydrostatic environments by virtue of Raman scattering, electrical conductivity, high-resolution transmission electron microscopy, and atomic force microscopy. Upon compression, Ga2Se3 underwent a phase transformation from the zinc-blende to NaCl-type structure at 10.6 GPa under non-hydrostatic conditions, which was manifested by the disappearance of an A mode and the noticeable discontinuities in the pressure-dependent Raman full width at half maximum (FWHMs) and electrical conductivity. Further increasing the pressure to 18.8 GPa, the semiconductor-to-metal phase transition occurred in Ga2Se3, which was evidenced by the high-pressure variable-temperature electrical conductivity measurements. However, the higher structural transition pressure point of 13.2 GPa was detected for Ga2Se3 under hydrostatic conditions, which was possibly related to the protective influence of the pressure medium. Upon decompression, the phase transformation and metallization were found to be reversible but existed in the large pressure hysteresis effect under different hydrostatic environments. Systematic research on the high-pressure structural and electrical transport properties for Ga2Se3 would be helpful to further explore the crystal structure evolution and electrical transport properties for other A2B3-type compounds.

Magnetic Characterization of SUS316L Deformed by High Pressure Torsion

2011 ◽  
Vol 239-242 ◽  
pp. 1300-1303
Author(s):  
Hong Cai Wang ◽  
Minoru Umemoto ◽  
Innocent Shuro ◽  
Yoshikazu Todaka ◽  
Ho Hung Kuo
Keyword(s):  
Plastic Deformation ◽  
High Pressure ◽  
Stainless Steel ◽  
Phase Transformation ◽  
Austenitic Stainless Steel ◽  
Volume Fraction ◽  
High Pressure Torsion ◽  
Austenitic Matrix ◽  
Magnetic Characterization

SUS316L austenitic stainless steel was subjected to severe plastic deformation (SPD) by the method of high pressure torsion (HPT). From a fully austenitic matrix (γ), HPT resulted in phase transformation from g®a¢. The largest volume fraction of 70% a¢ was obtained at 0.2 revolutions per minute (rpm) while was limited to 3% at 5rpm. Pre-straining of g by HPT at 5rpm decreases the volume fraction of a¢ obtained by HPT at 0.2rpm. By HPT at 5rpm, a¢®g reverse transformation was observed for a¢ produced by HPT at 0.2rpm.

Vibrational studies of hexagonal bronze systems: phonon calculation and high pressure induced phase transformation

2009 ◽  
Vol 40 (9) ◽  
pp. 1150-1157 ◽  
Author(s):  
J. Santos Coelho ◽  
W. Paraguassu ◽  
M. Maczka ◽  
A. G. Souza Filho ◽  
P.T.C. Freire ◽  
...  
Keyword(s):  
High Pressure ◽  
Phase Transformation ◽  
Vibrational Studies ◽  
Phonon Calculation

Enhanced crystallization and phase transformation of amorphous silicon nitride under high pressure

2001 ◽  
Vol 16 (1) ◽  
pp. 67-75 ◽  
Author(s):  
Ya-Li Li ◽  
Yong Liang ◽  
Fen Zheng ◽  
Xian-Feng Ma ◽  
Suo-Jing Cui ◽  
...  
Keyword(s):  
High Pressure ◽  
Phase Transformation ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Crystallization Temperature ◽  
Amorphous Materials ◽  
Normal Pressure ◽  
Nucleation And Growth ◽  
Amorphous Silicon Nitride ◽  
Amorphous Si

The crystallization and phase transformation of amorphous Si3N4 ceramics under high pressure (1.0–5.0 GPa) between 800 and 1700 °C were investigated. A greatly enhanced crystallization and α–β transformation of the amorphous Si3N4 ceramics were evident under the high pressure, as characterized by that, at 5.0 GPa, the amorphous Si3N4 began to crystallize at a temperature as low as 1000 °C (to transform to a modification). The subsequent a–b transformation occurred completed between 1350 and 1420 °C after only 20 min of pressing at 5.0 GPa. In contrast, under 0.1 MPa N2, the identical amorphous materials were stable up to 1400 °C without detectable crystallization, and only a small amount of a phase was detected at 1500 °C. The crystallization temperature and the a–b transformation temperatures are reduced by 200–350 °C compared to that at normal pressure. The enhanced phase transformations of the amorphous Si3N4 were discussed on the basis of thermodynamic and kinetic consideration of the effects of pressure on nucleation and growth.

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