Transient and steady-state electron transport in GaAs/AlxGa1−xAs heterojunctions at low temperatures: The effects of electron-electron interactions

1988 ◽  
Vol 37 (6) ◽  
pp. 2933-2945 ◽  
Author(s):  
M. Artaki ◽  
K. Hess
Keyword(s):  
Steady State ◽  
Electron Transport ◽  
Low Temperatures ◽  
State Electron ◽  
Transient And Steady State ◽  
Electron Interactions

Nonequilibrium optical phonon generation by steady-state electron transport in quantum-cascade lasers

2002 ◽  
Vol 80 (23) ◽  
pp. 4303-4305 ◽  
Author(s):  
Vincenzo Spagnolo ◽  
Gaetano Scamarcio ◽  
Mariano Troccoli ◽  
Federico Capasso ◽  
Claire Gmachl ◽  
...  
Keyword(s):  
Steady State ◽  
Electron Transport ◽  
Optical Phonon ◽  
Quantum Cascade Lasers ◽  
Quantum Cascade ◽  
State Electron ◽  
Phonon Generation ◽  
Cascade Lasers

Steady-state electron transport in the III–V nitride semiconductors: A sensitivity analysis

2003 ◽  
Vol 32 (5) ◽  
pp. 327-334 ◽  
Author(s):  
Stephen K. O’Leary ◽  
Brian E. Foutz ◽  
Michael S. Shur ◽  
Lester F. Eastman
Keyword(s):  
Sensitivity Analysis ◽  
Steady State ◽  
Electron Transport ◽  
Nitride Semiconductors ◽  
State Electron

Steady-State and Transient Electron Transport in ZnO: Recent Progress

2011 ◽  
Vol 1327 ◽  
Author(s):  
Walid A. Hadi ◽  
Michael Shur ◽  
Lester F. Eastman ◽  
Stephen K. O’Leary
Keyword(s):  
Zinc Oxide ◽  
Gallium Nitride ◽  
Steady State ◽  
Electron Transport ◽  
Electric Field ◽  
Thermal Equilibrium ◽  
Recent Progress ◽  
Constant Electric Field ◽  
Simulation Approach ◽  
State Electron

ABSTRACTWe briefly review some recent results on the steady-state and transient electron transport that occurs within bulk wurtzite zinc oxide. These results were obtained using an ensemble semi-classical three-valley Monte Carlo simulation approach. They showed that for electric field strengths in excess of 180 kV/cm, the steady-state electron drift velocity associated with bulk wurtzite zinc oxide exceeds that associated with bulk wurtzite gallium nitride. The transient electron transport that occurs within bulk wurtzite zinc oxide was studied by examining how electrons, initially in thermal equilibrium, respond to the sudden application of a constant electric field. These transient electron transport results demonstrated that for devices with dimensions smaller than 0.1 μm, gallium nitride based devices will offer the advantage, owing to their superior transient electron transport, while for devices with dimensions greater than 0.1 μm, zinc oxide based devices will offer the advantage, owing to their superior high-field steady-state electron transport.

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