High-resolution x-ray microstructural study of single crystals of YBa_{2}Cu_{3}O_{7-δ}

1988 ◽  
Vol 37 (4) ◽  
pp. 2301-2304 ◽  
Author(s):  
Hoydoo You ◽  
J. Axe ◽  
X. Kan ◽  
S. Moss ◽  
J. Liu ◽  
...  
Keyword(s):  
High Resolution ◽  
Single Crystals ◽  
Microstructural Study ◽  
X Ray

High-Resolution X-Ray Microstructural Study of Single Crystals of YBa2Cu3O7-y

1987 ◽  
Vol 99 ◽  
Author(s):  
Hoydoo You ◽  
J. D. Axe ◽  
X. B. Kan ◽  
S. C. Moss ◽  
J. Z. Liu ◽  
...  
Keyword(s):  
High Resolution ◽  
Diffraction Study ◽  
Single Crystals ◽  
Growth Conditions ◽  
High Energy ◽  
Synchrotron Source ◽  
Microstructural Study ◽  
X Ray ◽  
Oxygen Ordering ◽  
New Type

ABSTRACTSingle crystals of YBa2Cu3O7-y were studied by transmission Laue photography and monochromatic diffraction techniques, using the Cornell High Energy Synchrotron Source and a rotating anode x-ray source. A new type of twinning, with two orthorhombic domains rotated exactly 90 degree about the c axis, was observed in one sample and the conventional (110) type twinning in another sample with nominally identical growth conditions. A high resolution diffraction study of the sample with the conventional (110) twinning shows that measured orthorhombicity (proportional to oxygen ordering parameter) varies from one domain to another.

X-ray topo-tomography studies of linear dislocations in silicon single crystals

2018 ◽  
Vol 51 (6) ◽  
pp. 1616-1622 ◽  
Author(s):  
Victor Asadchikov ◽  
Alexey Buzmakov ◽  
Felix Chukhovskii ◽  
Irina Dyachkova ◽  
Denis Zolotov ◽  
...  
Keyword(s):  
Numerical Analysis ◽  
High Resolution ◽  
Single Crystals ◽  
Complete Characterization ◽  
Reconstruction Technique ◽  
Algebraic Reconstruction Technique ◽  
X Ray ◽  
Laboratory Setup ◽  
Simultaneous Algebraic Reconstruction Technique

This article describes complete characterization of the polygonal dislocation half-loops (PDHLs) introduced by scratching and subsequent bending of an Si(111) crystal. The study is based on the X-ray topo-tomography technique using both a conventional laboratory setup and the high-resolution X-ray image-detecting systems at the synchrotron facilities at KIT (Germany) and ESRF (France). Numerical analysis of PDHL images is performed using the Takagi–Taupin equations and the simultaneous algebraic reconstruction technique (SART) tomographic algorithm.

Basal plane bending of 4H-SiC single crystals grown by sublimation method with different seed attachment methods

CrystEngComm ◽  
2018 ◽  
Vol 20 (43) ◽  
pp. 6957-6962 ◽  
Author(s):  
Xianglong Yang ◽  
Jinying Yu ◽  
Xiufang Chen ◽  
Yan Peng ◽  
Xiaobo Hu ◽  
...  
Keyword(s):  
High Resolution ◽  
Single Crystals ◽  
Basal Plane ◽  
X Ray ◽  
Sublimation Method ◽  
Plane Bending

Basal plane bending of 4H-SiC single crystals grown using the sublimation method on an open or closed backside seed was measured using high-resolution X-ray diffractometry.

The Effect of Ti Addition on the Properties of Al-B4C Interface: A Microstructural Study

2010 ◽  
Vol 636-637 ◽  
pp. 192-197 ◽  
Author(s):  
F. Toptan ◽  
Ayfer Kilicarslan ◽  
Isil Kerti
Keyword(s):  
High Resolution ◽  
Field Emission ◽  
Reaction Layer ◽  
Liquid Aluminium ◽  
Microstructural Study ◽  
X Ray ◽  
Eds Analysis ◽  
Matrix Reinforcement ◽  
Ti Addition ◽  
Aluminium Metal

In the present work, Al-B4C composites were produced by casting route at 850°C and titanium-containing flux was used to overcome the wetting problem between B4C and liquid aluminium metal. The microstructure of matrix/reinforcement interface was investigated using SEM studies with or without Ti added composites. The reaction layer was also characterized with EDS analysis and X-ray mapping. It was found from the microstructural observations by high resolution field emission gun SEM (FEG-SEM) that the wetting issue was effectively solved by the formation of very thin (80-180 nm in thickness) Ti-C and Ti-B reaction layers.

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