Kinetics of hydrogen chemisorption by niobium on surfaces

1988 ◽  
Vol 37 (3) ◽  
pp. 1155-1160 ◽  
Author(s):  
Ki-Soo Sohn ◽  
Tong-Soo Park ◽  
Suck-Whan Kim
1988 ◽  
Vol 38 (8) ◽  
pp. 5716-5718 ◽  
Author(s):  
Suck-Whan Kim ◽  
Ki-Soo Sohn ◽  
Tong-Soo Park ◽  
Yung-Joo Kim

1987 ◽  
Vol 94 ◽  
Author(s):  
S. K. Shastry

Kinetics of epitaxial growth of GaAs from trimethylgallium (TMG) and arsine in organometallic chemical vapor deposition (OMCVD) have been suggested in the past to occur according to the Langmuir-Hinshelwood (L-H) or Langmuir-Rideal (L-R) mechanism [1–3], where competitive chemisorption of the Ga- and As-containing species is assumed. In contrast, formation of sp3 bonds on the GaAs growth front suggests that the Ga-containing species are less likely to chemisorb onto Assites, while the As-containing species are less likely to chemisorb onto Ga-sites. In addition, an analysis of probable chemical reactions and the unlikely event of homogeneous dissociation of hydrogen molecules indicate that the chemisorption of hydrogen must be included in the growth kinetics. Since H-As and H-Ga bonds have similar characteristics, such hydrogen chemisorption probably occurs on all sites. Thus, a mix of selective (Ga, As) and competitive (H2) chemisorption processes is likely to be present in practice. Furthermore, the presence of chemisorbed hydrogen will alter the surface As bonds, which, in the absence of hydrogen, are known to dehybridize and dimerize[4]. These basic issues have not been addressed in existing OMCVD growth models. Therefore, an analysis of the adsorption and growth processes, in the epitaxy of (100)GaAs is presented in this paper, with particular attention to the above issues.


1991 ◽  
Vol 44 (7) ◽  
pp. 3380-3382 ◽  
Author(s):  
Miguel Lagos ◽  
Jose Rogan ◽  
Ivan K. Schuller

Carbon ◽  
1969 ◽  
Vol 7 (6) ◽  
pp. 717
Author(s):  
R.C Bansal ◽  
F.J Vastola ◽  
P.L Walker

2005 ◽  
Vol 404-406 ◽  
pp. 317-322 ◽  
Author(s):  
F.C. Gennari ◽  
C. Neyertz ◽  
G. Meyer ◽  
P. Fornasiero ◽  
M. Graziani

1968 ◽  
Vol 21 (10) ◽  
pp. 2575
Author(s):  
N Chandrasekaran ◽  
B Viswanathan ◽  
V Srinivasan ◽  
MVC Sastri

2009 ◽  
Vol 92 (3-4) ◽  
pp. 280-284 ◽  
Author(s):  
Philippe Trens ◽  
Robert Durand ◽  
Bernard Coq ◽  
Christophe Coutanceau ◽  
Séverine Rousseau ◽  
...  

1959 ◽  
Vol 37 (5) ◽  
pp. 915-921 ◽  
Author(s):  
Manfred J. D. Low ◽  
H. Austin Taylor

The kinetics of the chemisorption of hydrogen on an iridium catalyst have been studied at various temperatures and pressures. The rate of adsorption is well defined by the Elovich equation. Isothermal anomalies have been observed and were found to be a function of temperature and initial gas pressure.


1969 ◽  
Vol 47 (16) ◽  
pp. 2933-2941 ◽  
Author(s):  
N. S. Viswanathan ◽  
L. M. Yeddanapalli

A detailed study of the kinetics of hydrogen chemisorption on 3 different nickel catalysts, supported on magnesia and prepared by coprecipitation, has been made over a wide range of pressures and temperatures. The results have been analyzed in the light of the Elovich equation. Experimental data obtained by variations of pressure and temperature indicate the existence of a number of stages in the chemisorption process and support the multiple kinetic stage hypothesis suggested by Low. The effect of temperature on the parameters has been studied, and relations obtained which have been used to calculate activation energies for each of the stages.


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