Lattice mechanics of monovalent metal nitrates

1987 ◽  
Vol 36 (9) ◽  
pp. 5047-5050 ◽  
Author(s):  
R. K. Singh ◽  
N. K. Gaur ◽  
S. L. Chaplot
Keyword(s):  
Monovalent Metal ◽  
Metal Nitrates ◽  
Lattice Mechanics

T The Structure of NO3– in Molten Monovalent Metal Nitrates by Pulsed Neutron Diffraction

1977 ◽  
Vol 32 (12) ◽  
pp. 1438-1443 ◽  
Author(s):  
Kenji Suzuki ◽  
Yoshiaki Fukushima
Keyword(s):  
Neutron Diffraction ◽  
Structure Factor ◽  
Time Of Flight ◽  
Isosceles Triangle ◽  
Monovalent Metal ◽  
Epithermal Neutrons ◽  
Metal Nitrates ◽  
Regular Triangle ◽  
Wide Range ◽  
Pulsed Neutron

Abstract The structure factor of molten monovalent metal nitrates was measured over a wide range of scattering vectors by time-of-flight pulsed neutron diffraction using epithermal neutrons generated from an electron LINAC. It is found that the NO3- ion forms an isosceles triangle in molten LiNO3, AgNO3 and TlNO3, and a regular triangle in molten NaNO3, KNO3, RbNO3 and CsNO3.

Structural diversity of the complexes of monovalent metal d10 ions with macrocyclic aggregates of iso-tellurazole N-oxides

2019 ◽  
Vol 43 (32) ◽  
pp. 12601-12608 ◽  
Author(s):  
Jin Wang ◽  
Peter C. Ho ◽  
James F. Britten ◽  
Valerie Tomassetti ◽  
Ignacio Vargas-Baca
Keyword(s):  
Structural Diversity ◽  
Coinage Metal ◽  
Monovalent Metal

Iso-tellurazole N-oxides yield a remarkable variety of structures with coinage-metal monocations.

scholarly journals Synthesis of Metal Oxide Inverse Opals from Metal Nitrates by PMMA Colloidal Crystal Templating

2020 ◽  
Author(s):  
Xuyang Zhang ◽  
Christian Weinberger ◽  
Sabrina Amrehn ◽  
Xia Wu ◽  
Michael Tiemann ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Colloidal Crystal ◽  
Inverse Opals ◽  
Metal Nitrates ◽  
Colloidal Crystal Templating

Effects of Drying Temperature on Surface Morphology and Electric Behavior of IGZO Thin Film Prepared by Solution Process

2015 ◽  
Vol 1731 ◽  
Author(s):  
Nobuko Fukuda ◽  
Shintaro Ogura ◽  
Koji Abe ◽  
Hirobumi Ushijima
Keyword(s):  
Thin Film ◽  
Organic Solvents ◽  
Room Temperature ◽  
Thin Film Transistor ◽  
Solution Process ◽  
Precursor Solution ◽  
Drying Process ◽  
Minor Variation ◽  
Drying Temperature ◽  
Metal Nitrates

ABSTRACTWe have achieved a drastic improvement of the performance as thin film transistor (TFT) for solution-processed IGZO thin film by controlling drying temperature of solvents containing the precursor solution. The IGZO-precursor solution was prepared by mixing of metal nitrates and two kinds of organic solvents, 2-methoxyethanol (2ME) and 2,2,2-trifluoroethanol (TFE). 2ME was used for dissolving metal nitrates. TFE was added as a solvent for reducing surface tension as small as possible, leading to improvement of the wettability of the precursor solution on the surface of the substrate. In order to discuss the relationship between morphology and drying process, the spin-coated IGZO-precursor films were dried at room temperature and 140 °C on a hotplate, respectively. Annealing of the both films was carried out at 300 °C in an electric oven for 60 min after each drying process. Drying at room temperature provides a discontinuous film, resulting in a large variation of the TFT performance. On the other hand, drying at 140 °C provides a continuous film, resulting in the higher TFT performance and a minor variation. The difference in surface morphologies would be derived from the evaporation rate of the organic solvents. The rapid evaporation at 140 °C brings about rapid pinning of the spin-coated precursor layer on the substrate. Preparation process via the drying at 140 °C gave ∼ 1 cm2 V-1 s-1 of the saturated mobility, quite small hysteresis, and 107∼ 108 of the on-off ratio.

p-Toluenesulfonic acid catalyzed regiospecific nitration of phenols with metal nitrates

2006 ◽  
Vol 47 (28) ◽  
pp. 4933-4935 ◽  
Author(s):  
V. Anuradha ◽  
P.V. Srinivas ◽  
P. Aparna ◽  
J. Madhusudana Rao
Keyword(s):  
Toluenesulfonic Acid ◽  
Metal Nitrates ◽  
Acid Catalyzed
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