Weak localization in inhomogeneous magnetic fields

1987 ◽  
Vol 36 (6) ◽  
pp. 3135-3146 ◽  
Author(s):  
J. Rammer ◽  
A. L. Shelankov
Keyword(s):  
Magnetic Fields ◽  
Weak Localization

Weak-localization effects and conductance fluctuations: Implications of inhomogeneous magnetic fields

1993 ◽  
Vol 48 (20) ◽  
pp. 15218-15236 ◽  
Author(s):  
Daniel Loss ◽  
Herbert Schoeller ◽  
Paul M. Goldbart
Keyword(s):  
Magnetic Fields ◽  
Weak Localization ◽  
Conductance Fluctuations

Weak localization in monolayer and bilayer graphene

2007 ◽  
Vol 366 (1863) ◽  
pp. 245-250 ◽  
Author(s):  
D.W Horsell ◽  
F.V Tikhonenko ◽  
R.V Gorbachev ◽  
A.K Savchenko
Keyword(s):  
Elastic Scattering ◽  
Magnetic Fields ◽  
Experimental Evidence ◽  
Carrier Concentration ◽  
Weak Localization ◽  
Bilayer Graphene ◽  
Graphene Layers ◽  
Scattering Mechanisms ◽  
Two Systems

We demonstrate quantitative experimental evidence for a weak localization correction to the conductivity in monolayer and bilayer graphene systems. We show how inter- and intra-valley elastic scattering control the correction in small magnetic fields in a way which is unique to graphene. A clear difference in the forms of the correction is observed in the two systems, which shows the importance of the interplay between the elastic scattering mechanisms and how they can be distinguished. Our observation of the correction at zero-net carrier concentration in both systems is clear evidence of the inhomogeneity engendered into the graphene layers by disorder.

2D ANOMALOUS MAGNETORESISTANCE IN THE PRESENCE OF SPIN–ORBIT SCATTERING

2007 ◽  
Vol 06 (03n04) ◽  
pp. 187-189
Author(s):  
NIKITA S. AVERKIEV ◽  
KONSTANTIN S. ROMANOV
Keyword(s):  
Magnetic Fields ◽  
Spin Relaxation ◽  
Diffusion Approximation ◽  
Weak Localization ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Semiconductor Structures ◽  
Weak Magnetic Fields

The model of weak localization in 2D semiconductor structures in the whole range of classically weak magnetic fields in the presence of the Elliot–Yafet spin relaxation has been developed. It was shown that the spin–orbit interaction influences the value of magnetoresistance in small magnetic fields (within diffusion approximation) and when diffusion approximation is no longer valid.

Weak-localization magnetoconductivity in superlattices: Extension to higher magnetic fields

1992 ◽  
Vol 46 (24) ◽  
pp. 15905-15911 ◽  
Author(s):  
W. Szott ◽  
C. Jedrzejek ◽  
W. P. Kirk
Keyword(s):  
Magnetic Fields ◽  
Weak Localization

Measurements of weak localization of graphene in inhomogeneous magnetic fields

JETP Letters ◽  
2015 ◽  
Vol 102 (6) ◽  
pp. 367-371 ◽  
Author(s):  
N. Lindvall ◽  
A. Shivayogimath ◽  
A. Yurgens
Keyword(s):  
Magnetic Fields ◽  
Weak Localization

Low temperature resistivity anomalies in Pr-based nano-manganites

2015 ◽  
Vol 11 (3) ◽  
pp. 3184-3189 ◽  
Author(s):  
Proloy T. Das
Keyword(s):  
Low Temperature ◽  
Magnetic Fields ◽  
Electronic Transport ◽  
Weak Localization ◽  
Electron Interaction ◽  
Resistivity Minimum ◽  
Spin Dependent Scattering ◽  
T Values ◽  
Temperature Resistivity ◽  
Interaction Phase

The low-temperature electronic transport behavior of under doped polycrystalline Pr0.8Sr0.2MnO3 (PSMO) manganitenanoparticles (down to 40 nm), have been investigated in the presence of applied external magnetic fields (Hext) and adistinct resistivity minimum (ρmin) is observed below 50 K for each PSMO sample. It has been found that both depth of ρmin,and temperature of resistivity minima (min T ) values enhance with increase of Hext. Considering various possibilities likeCoulomb blockade theory, electron-electron interaction, phase separation, Kondo mechanism, we conclude thatoccurrence of low temperature resistivity anomalies (<min T ) in PSMO manganite system is presumably due to acombined effect of electron-electron interaction (~T1/2) and 3D weak localization (WL) mechanism. The proposed modelcan explain spin dependent scattering phenomena in disorder background of correlated manganite system and behaviorof various fit parameters responsible for low temperature resistivity anomalies under external magnetic fields.

Sign in / Sign up

Export Citation Format

Share Document