Stark effect in GaAs-AlxGa1−xAs quantum wells: Light scattering by intersubband transitions

1987 ◽  
Vol 36 (2) ◽  
pp. 1300-1302 ◽  
Author(s):  
K. Bajema ◽  
R. Merlin ◽  
F.-Y. Juang ◽  
S.-C. Hong ◽  
J. Singh ◽  
...  
Keyword(s):  
Light Scattering ◽  
Quantum Wells ◽  
Stark Effect ◽  
Intersubband Transitions

STARK EFFECT IN QUANTUM WELLS : RAMAN SCATTERING BY INTERSUBBAND TRANSITIONS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-179-C5-182
Author(s):  
K. BAJEMA ◽  
R. MERLIN ◽  
F.-Y. JUANG ◽  
S.-C. HONG ◽  
J. SINGH ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Stark Effect ◽  
Intersubband Transitions

Intersubband Transitions in Asymmetric Quantum Wells with External Electric Field

2014 ◽  
Vol 525 ◽  
pp. 170-176
Author(s):  
Zhao Xu Liu ◽  
Jun Zhu ◽  
Si Hua Ha
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
External Electric Field ◽  
Electric Fields ◽  
Stark Effect ◽  
Energy Levels ◽  
Intersubband Transitions ◽  
External Electric Fields ◽  
Asymmetric Quantum ◽  
Negative Field

The quantum-confined Stark effect on the optical absorption of intersubband transitions in an asymmetric AlxGa1-xN/In0.3Ga0.7N/GaN quantum wells is investigated by means of the density matrix formulism. The built-in electric field generated by the piezoelectric and spontaneous polarizations competing against to the external electric fields is considered. As the result, the influences of the built-in and external electric fields on the energy potentials and the eigen stares are discussed in detail. When the positive external electric field is applied, the peak values of the absorption coefficients from 3-2, 2-1 and 3-1 transitions are reduced and moved to the lower photon energy levels. With the negative field, the exactly opposite results can be obtained. Moreover, it is indicated that the results of the wavelengths from the 3-2, 2-1 and 3-1 transitions are reduced by the positive external electric field and increased by the negative field.

QUANTUM CONFINED STARK EFFECT ON INTERSUBBAND TRANSITIONS IN STRAINED WURTZITE NITRIDE QUANTUM WELLS

2011 ◽  
Vol 25 (22) ◽  
pp. 1847-1854 ◽  
Author(s):  
SI HUA HA ◽  
SHI LIANG BAN ◽  
JUN ZHU
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Stark Effect ◽  
Lattice Mismatch ◽  
Thermal Strain ◽  
Band Gaps ◽  
Level System ◽  
Intersubband Transitions ◽  
Quantum Confined Stark Effect ◽  
Quantum Confined

The quantum confined Stark effect on the optical absorption of intersubband transitions in nitride quantum wells is investigated by means of the density matrix formulism. The built-in electric field, which is caused by the piezoelectric polarization produced by the lattice mismatch and thermal strain, and by the spontaneous polarization, is taken into account. The three-energy-level system is obtained by designing a quantum-well structure composed by two barriers with different band gaps. For example, the corresponding wavelengths for 1–2, 1–3 and 2–3 transitions in an Al 0.5 Ga 0.5 N / In 0.3 Ga 0.7 N / GaN quantum well with the well width of 5 nm are calculated as 1.84 μm, 0.95 μm and 2.24 μm, respectively. Moreover, they decrease with increasing the Al composition of left barrier.

scholarly journals Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Xiaowei Wang ◽  
Feng Liang ◽  
Degang Zhao ◽  
Zongshun Liu ◽  
Jianjun Zhu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Layer Thickness ◽  
Stark Effect ◽  
Chemical Vapor ◽  
Multiple Quantum ◽  
Three Samples ◽  
Measurement Results ◽  
Cap Layer ◽  
The Difference

Abstract Three InGaN/GaN MQWs samples with varying GaN cap layer thickness were grown by metalorganic chemical vapor deposition (MOCVD) to investigate the optical properties. We found that a thicker cap layer is more effective in preventing the evaporation of the In composition in the InGaN quantum well layer. Furthermore, the quantum-confined Stark effect (QCSE) is enhanced with increasing the thickness of GaN cap layer. In addition, compared with the electroluminescence measurement results, we focus on the difference of localization states and defects in three samples induced by various cap thickness to explain the anomalies in room temperature photoluminescence measurements. We found that too thin GaN cap layer will exacerbates the inhomogeneity of localization states in InGaN QW layer, and too thick GaN cap layer will generate more defects in GaN cap layer.

Oscillator strengths for the intersubband transitions in GaAs/InGa1–As quantum wells and its strain dependence

Optik ◽  
2016 ◽  
Vol 127 (11) ◽  
pp. 4903-4908 ◽  
Author(s):  
Melek Msahli ◽  
Hosni Saidi ◽  
Amira Ben Ahmed ◽  
Said Ridene ◽  
Habib Bouchriha
Keyword(s):  
Quantum Wells ◽  
Oscillator Strengths ◽  
Intersubband Transitions ◽  
Strain Dependence

Resonant optical nonlinearities from intersubband transitions in GaN/AlN quantum wells

2003 ◽  
Vol 83 (2) ◽  
pp. 263-265 ◽  
Author(s):  
R. Rapaport ◽  
Gang Chen ◽  
O. Mitrofanov ◽  
C. Gmachl ◽  
H. M. Ng ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Nonlinearities ◽  
Intersubband Transitions

Mid-infrared phase modulation by intersubband transitions in quantum wells

1992 ◽  
Vol 39 (11) ◽  
pp. 2646
Author(s):  
E.B. Dupont ◽  
D. Delacourt ◽  
M. Papuchon
Keyword(s):  
Quantum Wells ◽  
Phase Modulation ◽  
Intersubband Transitions ◽  
Mid Infrared
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