Transport properties of random and nonrandom substitutionally disordered alloys. II. New cluster formulation of the ac conductivity and numerical applications

1987 ◽  
Vol 35 (17) ◽  
pp. 8985-9003 ◽  
Author(s):  
M. Hwang ◽  
A. Gonis ◽  
A. J. Freeman
2015 ◽  
Vol 26 (5) ◽  
pp. 1577-1594 ◽  
Author(s):  
M. Ben Gzaiel ◽  
A. Oueslati ◽  
M. Gargouri

Ionics ◽  
2007 ◽  
Vol 14 (1) ◽  
pp. 79-83 ◽  
Author(s):  
S. Austin Suthanthiraraj ◽  
Vinod Mathew

2004 ◽  
Vol 13 (2) ◽  
pp. 277-281 ◽  
Author(s):  
G Conte ◽  
M.C Rossi ◽  
S Salvatori ◽  
F Spaziani ◽  
G Vitale ◽  
...  

Entropy ◽  
2019 ◽  
Vol 21 (3) ◽  
pp. 233 ◽  
Author(s):  
Ahmed Missaoui ◽  
Jouda Khabthani ◽  
Guy Trambly de Laissardière ◽  
Didier Mayou

Organic semi-conductors have unique electronic properties and are important systems both at the fundamental level and also for their applications in electronic devices. In this article we focus on the particular case of rubrene which has one of the best electronic transport properties for application purposes. We show that this system can be well simulated by simple tight-binding systems representing one-dimensional (1D) chains that are weakly coupled to their neighboring chains in the same plane. This makes in principle this rubrene system somehow intermediate between 1D and isotropic 2D models. We analyse in detail the dc-transport and terahertz conductivity in the 1D and in the anisotropic 2D models. The transient localisation scenario allows us to reproduce satisfactorily some basics results such as mobility anisotropy and orders of magnitude as well as ac-conductivity in the terahertz range. This model shows in particular that even a weak inter-chain coupling is able to improve notably the propagation along the chains. This suggest also that a strong inter-chain coupling is important to get organic semi-conductors with the best possible transport properties for applicative purposes.


1976 ◽  
Vol 54 (4) ◽  
pp. 408-412 ◽  
Author(s):  
J. M. Reyes ◽  
M. Sayer ◽  
R. Chen

Measurements of DC and AC conductivity and thermopower show that VO2: W can be treated as a conventional n-type extrinsic semiconductor with a donor level 0.06–0.08 eV below the conduction band. For samples with an impurity content from 0.67 → 1.70 at.% W, an effective mass ratio m*/m of 65 ± 10 and a compensation ratio of 0.7 ± 0.1 are deduced from conventional semiconductor theory assuming donor exhaustion just below the metal semiconductor transition.


1986 ◽  
Vol 33 (4) ◽  
pp. 2872-2875 ◽  
Author(s):  
Miaogy Hwang ◽  
A. Gonis ◽  
A. J. Freeman

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