Two-dimensional magnetic polaron in the quantum well of dilute magnetic semiconductors

1986 ◽  
Vol 34 (10) ◽  
pp. 7391-7393 ◽  
Author(s):  
Zi-zhao Gan
1992 ◽  
Vol 82 (1) ◽  
pp. 29-32 ◽  
Author(s):  
D.R. Yakovlev ◽  
W. Ossau ◽  
G. Landwehr ◽  
R.N. Bicknell-Tassius ◽  
A. Waag ◽  
...  

1999 ◽  
Vol 581 ◽  
Author(s):  
A. G. Petukhov ◽  
M. Foygel ◽  
A. Chantis

ABSTRACTA theory of bound magnetic polaron (BMP) hopping, driven by thermodynamic fluctuations of the local magnetization, has been developed. It is based on a two-site model of BMP's. The BMP hopping probability rate was calculated in the framework of the “Golden Rule” approach by using the Ginzburg-Landau effective Hamiltonian method. The theory explains the main features of hopping resistivity observed in a variety of experiments in dilute magnetic semiconductors and magnetic nanocomposites, namely: (a) negative giant magnetoresistance, the scale of which is governed by a magnetic polaron localization volume, and (b) low magnetic field positive magnetoresistance, which usually preceeds negative magnetoresistance.


2001 ◽  
Vol 15 (24n25) ◽  
pp. 3228-3237 ◽  
Author(s):  
M. Foygel ◽  
A. G. Petukhov

A theory of positive and negative colossal magnetoresistance (CMR) in dilute magnetic semiconductors (DMS) is presented. The phenomenon is described in the framework of bound magnetic polaron (BMP) hopping, driven by thermodynamic fluctuations of the local magnetization. The latter is caused by fluctuating spins of the magnetic atoms which strongly interact with the spin of a trapped electron or a hole within the localization volume. The authors' previous approach to the BMP hopping problem1,2, based on the Ginzburg-Landau effective Hamiltonian method, has been generalized in order to take into account the anisotropy of the BMP states. This effect can be attributed to the anisotropy of the local exchange field and/or to the field-induced anisotropy of the magnetic susceptibility. In DMS the latter is shown to affect the position and the shape of the maximum in the magnetic-field dependence of CMR.


2007 ◽  
Vol 999 ◽  
Author(s):  
Deepayan Chakraborti ◽  
John T. Prater ◽  
Jagdish Narayan

AbstractSystematic studies on the epitaxial growth and the effect of n-type (Al,Ga) doping on the magnetic and electrical properties of 2.0 % Cu doped ZnO dilute magnetic semiconducting thin films deposited on c-plane sapphire single crystals by pulsed laser deposition are reported here. An decrease in more than 3 orders of magnitude in resistivity from 2×101 Ohm cm for the 2.0 % Cu doped ZnO to ~5×10-3 Ohm cm for Al and Ga codoped films is observed. This increase in conductivity does not show any effect on ferromagnetic ordering thus contradicting the claim of free carrier mediated exchange as being responsible for ferromagnetic ordering in these DMS systems. A bound magnetic polaron or F-center mediated exchange is a possible explanation for the origin of ferromagnetism in these ZnO based DMS thin films.


Materials ◽  
2021 ◽  
Vol 14 (15) ◽  
pp. 4138
Author(s):  
Ye Yuan ◽  
Yufang Xie ◽  
Ning Yuan ◽  
Mao Wang ◽  
René Heller ◽  
...  

One of the most attractive characteristics of diluted ferromagnetic semiconductors is the possibility to modulate their electronic and ferromagnetic properties, coupled by itinerant holes through various means. A prominent example is the modification of Curie temperature and magnetic anisotropy by ion implantation and pulsed laser melting in III–V diluted magnetic semiconductors. In this study, to the best of our knowledge, we performed, for the first time, the co-doping of (In,Mn)As diluted magnetic semiconductors by Al by co-implantation subsequently combined with a pulsed laser annealing technique. Additionally, the structural and magnetic properties were systematically investigated by gradually raising the Al implantation fluence. Unexpectedly, under a well-preserved epitaxial structure, all samples presented weaken Curie temperature, magnetization, as well as uniaxial magnetic anisotropies when more aluminum was involved. Such a phenomenon is probably due to enhanced carrier localization introduced by Al or the suppression of substitutional Mn atoms.


Nanoscale ◽  
2021 ◽  
Author(s):  
Yinqiao Liu ◽  
Qinxi Liu ◽  
Ying Liu ◽  
Xue Jiang ◽  
Xiaoliang Zhang ◽  
...  

The contributions of spin-phonon coupling (SPC) to spin and thermal transport properties are important in the emerging two-dimensional (2D) magnetic semiconductors and are relevant for the data security and working...


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