Temperature dependence of the dielectric function and the interband critical points of CdSe

1986 ◽  
Vol 34 (4) ◽  
pp. 2458-2469 ◽  
Author(s):  
S. Logothetidis ◽  
M. Cardona ◽  
P. Lautenschlager ◽  
M. Garriga
Keyword(s):  
Temperature Dependence ◽  
Dielectric Function ◽  
Critical Points

Temperature dependence of the dielectric function and interband critical points in silicon

1987 ◽  
Vol 36 (9) ◽  
pp. 4821-4830 ◽  
Author(s):  
P. Lautenschlager ◽  
M. Garriga ◽  
L. Vina ◽  
M. Cardona
Keyword(s):  
Temperature Dependence ◽  
Dielectric Function ◽  
Critical Points

Temperature dependence of the dielectric function and the interband critical points in orthorhombic GeS

1986 ◽  
Vol 33 (2) ◽  
pp. 1110-1117 ◽  
Author(s):  
S. Logothetidis ◽  
P. Lautenschlager ◽  
M. Cardona
Keyword(s):  
Temperature Dependence ◽  
Dielectric Function ◽  
Critical Points

scholarly journals Temperature dependence of the dielectric function and critical points of α-SnS from 27 to 350 K

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Hoang Tung Nguyen ◽  
Van Long Le ◽  
Thi Minh Hai Nguyen ◽  
Tae Jung Kim ◽  
Xuan Au Nguyen ◽  
...  
Keyword(s):  
Low Temperature ◽  
Temperature Dependence ◽  
Dielectric Function ◽  
Spectral Energy ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Temperature Dependences ◽  
Exciton Effect ◽  
Bose Einstein ◽  
Temperature Gradient Method

Abstract We report the temperature dependence of the dielectric function ε = ε1 + iε2 and critical point (CP) energies of biaxial α-SnS in the spectral energy region from 0.74 to 6.42 eV and temperatures from 27 to 350 K using spectroscopic ellipsometry. Bulk SnS was grown by temperature gradient method. Dielectric response functions were obtained using multilayer calculations to remove artifacts due to surface roughness. We observe sharpening and blue-shifting of CPs with decreasing temperature. A strong exciton effect is detected only in the armchair direction at low temperature. New CPs are observed at low temperature that cannot be detected at room temperature. The temperature dependences of the CP energies were determined by fitting the data to the phenomenological expression that contains the Bose–Einstein statistical factor and the temperature coefficient for describing the electron–phonon interaction.

scholarly journals Temperature dependence of the interband critical points of bulk Ge and strained Ge on Si

2017 ◽  
Vol 421 ◽  
pp. 905-912 ◽  
Author(s):  
Nalin S. Fernando ◽  
T. Nathan Nunley ◽  
Ayana Ghosh ◽  
Cayla M. Nelson ◽  
Jacqueline A. Cooke ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Critical Points

Temperature dependence of the dielectric function and the interband critical-point parameters of GaSb

1991 ◽  
Vol 43 (5) ◽  
pp. 4349-4360 ◽  
Author(s):  
Stefan Zollner ◽  
Miquel Garriga ◽  
Josef Humlek ◽  
Sudha Gopalan ◽  
Manuel Cardona
Keyword(s):  
Temperature Dependence ◽  
Critical Point ◽  
Dielectric Function

Temperature dependence of the dielectric function and critical-point energies of InAs

2012 ◽  
Vol 61 (1) ◽  
pp. 97-101 ◽  
Author(s):  
Tae Jung Kim ◽  
Soon Yong Hwang ◽  
Jun Seok Byun ◽  
Nilesh S. Barange ◽  
Jun Young Kim ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Critical Point ◽  
Dielectric Function
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