Dependence of energy gap onxandTinZn1−xMnxSe: The role of exchange interaction

1986 ◽  
Vol 33 (12) ◽  
pp. 8207-8215 ◽  
Author(s):  
R. B. Bylsma ◽  
W. M. Becker ◽  
J. Kossut ◽  
U. Debska ◽  
D. Yoder-Short
Keyword(s):  
Exchange Interaction ◽  
Energy Gap

scholarly journals Role of exchange interaction in nitrogen vacancy center based magnetometry

2016 ◽  
Vol 94 (24) ◽  
Author(s):  
Cong Son Ho ◽  
Seng Ghee Tan ◽  
Mansoor B. A. Jalil ◽  
Zilong Chen ◽  
Leonid A. Krivitsky
Keyword(s):  
Exchange Interaction ◽  
Nitrogen Vacancy ◽  
Nitrogen Vacancy Center ◽  
Vacancy Center

The Role of Rare Earths in Narrow Energy Gap Semiconductors

1990 ◽  
Vol 216 ◽  
Author(s):  
D.L. Partin ◽  
J. Heremans ◽  
D.T. Morelli ◽  
C.M. Thrush
Keyword(s):  
Rare Earth ◽  
Band Gap ◽  
Indium Antimonide ◽  
Energy Band ◽  
Energy Gap ◽  
Lattice Parameter ◽  
Molecular Beam Epitaxy Growth ◽  
Lead Chalcogenide ◽  
Energy Band Gap

ABSTRACTNarrow energy band gap semiconductors are potentially useful for various devices, including infrared detectors and diode lasers. Rare earth elements have been introduced into lead chalcogenide semiconductors using the molecular beam epitaxy growth process. Europium and ytterbium increase the energy band gap, and nearly lattice-matched heterojunctions have been grown. In some cases, valence changes in the rare earth element cause doping of the alloy. Some initial investigations of the addition of europium to indium antimonide will also be reported, including the variation of lattice parameter and optical transmission with composition and a negative magnetoresistance effect.

Ethical and Legal Foundations of Relational Marketing Exchanges

1993 ◽  
Vol 57 (4) ◽  
pp. 35-46 ◽  
Author(s):  
Gregory T. Gundlach ◽  
Patrick E. Murphy
Keyword(s):  
Exchange Interaction ◽  
Contract Law ◽  
Limited Attention ◽  
Relational Exchange ◽  
Relational Marketing ◽  
Law And Ethics ◽  
Legal Foundations

Previous study of exchange by marketing scholars has emphasized events and conditions leading to and the outcomes of exchange interaction. However, limited attention has been directed toward the role of ethics and law in exchange. The emerging perspective of relational exchange suggests the importance of these foundations. The authors examine the interrelationship of contract law and ethics for building and sustaining marketing exchanges. They explore dimensions of ethical exchange and offer managerial and research implications.

Electronic and Optical Properties of Si/SiO2 Superlattices from First Principles: Role of Interfaces.

2001 ◽  
Vol 677 ◽  
Author(s):  
Pierre Carrier ◽  
Gilles Abramovici ◽  
Laurent J. Lewis ◽  
M. W. C. Dharma-wardana
Keyword(s):  
Optical Properties ◽  
First Principles ◽  
Energy Gap ◽  
Local Density ◽  
Interband Transition ◽  
Theoretical Research ◽  
Slab Thickness ◽  
Full Potential ◽  
Wave Method

ABSTRACTThe observation of intense luminescence in Si/SiO2 superlattices (SLs) has lead to new theoretical research on silicon-based materials. We have performed first-principles calculations using three Si/SiO2 SL models in order to examine the role of interfaces on the electronic structure and optical properties. The first two models are derived directly from crystalline structures and have simple interfaces. These models have been studied using the full-potential, linearized-augmented-plane-wave method, in the local-density-approximation (LDA). The optical absorption within the interband transition theory (excluding excitonic effects) have been deduced. The Si(001)-SiO2 interface structure is shown to affect the optical behaviour. Following these observations, we have considered a more realistic, fully-relaxed model. The projector-augmented-wave method under the LDA is used to perform the structural relaxation as well as band structure and optical calculations. The role of confinement on the energy gap is studied by inserting additional silicon slabs into the supercell. Direct energy gaps are observed and the energy gap is found to decrease with increasing silicon slab thickness, as observed experimentally. The role of the interface has been considered in more details by studying the contribution to the energy gap of Si atoms having different oxidation patterns; partially oxidized Si atoms at the interface, as well as Si atoms inside the Si layer, are shown to contribute to the transitions at the energy gap.

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