Point defects in ordered metallic compounds. I. Electronic-structure calculation by the linear-muffin-tin–orbital method

1986 ◽  
Vol 33 (8) ◽  
pp. 5307-5318 ◽  
Author(s):  
C. Koenig ◽  
N. Stefanou ◽  
J. M. Koch
1987 ◽  
Vol 44 (3) ◽  
pp. 297-305 ◽  
Author(s):  
F. Beeler ◽  
O.K. Andersen ◽  
O. Gunnarsson ◽  
O. Jepsen ◽  
M. Scheffler

1985 ◽  
Vol 46 ◽  
Author(s):  
Franz Beeler ◽  
Ole K. Andersen ◽  
Matthias Scheffler

AbstractThe states of lowest energy have been calculated for iron-group (3d) transition-metal impurities in silicon. The donor and acceptor levels reproduce all experimentally observed transitions and trends. The theory predicts that the ground states of the early 3d interstitials and late 3d substitutionals have low spin. This is in conflict with the generally accepted model of Ludwig and Woodbury, if applied to these impurities, but not with existing experiments.


2018 ◽  
Vol 87 (9) ◽  
pp. 093701 ◽  
Author(s):  
Hirohito Aizawa ◽  
Takashi Koretsune ◽  
Kazuhiko Kuroki ◽  
Hitoshi Seo

2013 ◽  
Author(s):  
Robert Cimrman ◽  
Miroslav Tůma ◽  
Matyáš Novák ◽  
Ondřej Čertík ◽  
Jiří Plešek ◽  
...  

1985 ◽  
pp. 1031-1034 ◽  
Author(s):  
M. Tegze ◽  
R.A. de Groot ◽  
F. van der Woude ◽  
F.M. Mueller

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