Electronic-Structure Calculation of 3d Transition-Metal Point Defects in Silicon
Keyword(s):
AbstractThe states of lowest energy have been calculated for iron-group (3d) transition-metal impurities in silicon. The donor and acceptor levels reproduce all experimentally observed transitions and trends. The theory predicts that the ground states of the early 3d interstitials and late 3d substitutionals have low spin. This is in conflict with the generally accepted model of Ludwig and Woodbury, if applied to these impurities, but not with existing experiments.
1971 ◽
Vol 4
(17)
◽
pp. 2979-2991
◽
Electronic structure and magnetic moment of dilute transition metal impurities in semi-metallic CaB6
2017 ◽
Vol 444
◽
pp. 349-353
Keyword(s):
Keyword(s):
1986 ◽
Vol 16
(10)
◽
pp. 1485-1494
◽
Keyword(s):
1987 ◽
Vol 44
(3)
◽
pp. 297-305
◽
1997 ◽
Vol 92
(5)
◽
pp. 1009-1012
◽
1983 ◽
Vol 31-34
◽
pp. 553-554
◽
1988 ◽
Vol 21
(9)
◽
pp. 1779-1790
◽
Keyword(s):