Optical absorption and photoluminescence of glow-discharge amorphous Si:F films

1985 ◽  
Vol 31 (10) ◽  
pp. 6609-6615 ◽  
Author(s):  
M. Janai ◽  
R. A. Street
1982 ◽  
Vol 25 (12) ◽  
pp. 7678-7687 ◽  
Author(s):  
B. von Roedern ◽  
D. K. Paul ◽  
J. Blake ◽  
R. W. Collins ◽  
G. Moddel ◽  
...  

1985 ◽  
Vol 49 ◽  
Author(s):  
F. Carasco ◽  
J. Mort ◽  
F. Jansen ◽  
S. Grammatica

A glow-discharge deposited a-Si:H/insulator heterostructu re has been characterized by a range of measurements including optical absorption, internal photoemission, xerographic discharge and spectral dependence of photoconductivity. Efficient injection of photocarriers from a-Si:H into, and transport through, films of SiOx:N:H up to 10 μm thick has been achieved. Unlike the conventional thermal oxide on Si, no significant energy barrier to injection is fotInd in the plasma deposited heterostructure. The use of the structure as a potential xerographic device is demonstrated. A mobility lifetime product as high as 6 x 10-10 cm2/volt is found for electronsin the SiOx:N:H.


1979 ◽  
Vol 58 (2) ◽  
pp. 397-401
Author(s):  
J. McGill ◽  
J.I.B. Wilson

1983 ◽  
Vol 59-60 ◽  
pp. 605-608 ◽  
Author(s):  
H. Watanabe ◽  
K. Katoh ◽  
M. Yasui ◽  
Y. Shibata

1983 ◽  
Vol 45 (7) ◽  
pp. 649-653 ◽  
Author(s):  
L. Chahed ◽  
C. Senemaud ◽  
M.L. Theye ◽  
J. Bullot ◽  
M. Galin ◽  
...  

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-357-Pr3-362 ◽  
Author(s):  
D. D. Papakonstantinou ◽  
D. Mataras ◽  
Arefi-Khonsari

1982 ◽  
Vol 43 (6) ◽  
pp. 875-881 ◽  
Author(s):  
B. Dubreuil ◽  
P. Pignolet ◽  
A. Catherinot ◽  
P. Davy

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