Band mixing in semiconductor superlattices

1985 ◽  
Vol 31 (4) ◽  
pp. 2056-2068 ◽  
Author(s):  
J. N. Schulman ◽  
Yia-Chung Chang
Keyword(s):  
Semiconductor Superlattices ◽  
Band Mixing

Band mixing effect in semiconductor superlattices

1985 ◽  
Vol 1 (4) ◽  
pp. 357-361 ◽  
Author(s):  
Yia-Chung Chang ◽  
J.N. Schulman
Keyword(s):  
Semiconductor Superlattices ◽  
Mixing Effect ◽  
Band Mixing

RAMAN PROBING OF PHONONS AND INTERFACES IN SEMICONDUCTOR SUPERLATTICES

1984 ◽  
Vol 45 (C5) ◽  
pp. C5-131-C5-137 ◽  
Author(s):  
M. V. Klein ◽  
C. Colvard ◽  
R. Fischer ◽  
H . Morkoç
Keyword(s):  
Semiconductor Superlattices

EXPERIMENTAL INVESTIGATIONS OF THE QUANTUM PHOTOVOLTAIC EFFECT IN InAs-GaSb SEMICONDUCTOR SUPERLATTICES

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-183-C5-186
Author(s):  
J. BLEUSE ◽  
P. VOISIN ◽  
M. VOOS ◽  
L. L. CHANG ◽  
L. ESAKI
Keyword(s):  
Photovoltaic Effect ◽  
Experimental Investigations ◽  
Semiconductor Superlattices

Effects of Giant Optical Anisotropy in R-plane GaN/AlGaN Quantum Wells by Valence Band Mixing

PIERS Online ◽  
2006 ◽  
Vol 2 (6) ◽  
pp. 562-566 ◽  
Author(s):  
Chun-Nan Chen ◽  
Kao-Feng Yarn ◽  
Win Jet Luo ◽  
Jih-Chen Chiang ◽  
Ikai Lo ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Optical Anisotropy ◽  
Band Mixing ◽  
Valence Band Mixing

scholarly journals Valence Band Mixing in GaAs/AlGaAs Quantum Wells Adjacent to Self-Assembled InAlAs Antidots

2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Takuya Kawazu
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Valence Band ◽  
Energy Barrier ◽  
Heavy Hole ◽  
Electronic States ◽  
Light Hole ◽  
Photoluminescence Excitation ◽  
Band Mixing ◽  
Valence Band Mixing

Optical properties of GaAs/AlGaAs quantum wells (QWs) in the vicinity of InAlAs quantum dots (QDs) were studied and compared with a theoretical model to clarify how the QD strain affects the electronic states in the nearby QW. In0.4Al0.6As QDs are embedded at the top of the QWs; the QD layer acts as a source of strain as well as an energy barrier. Photoluminescence excitation (PLE) measurements showed that the QD formation leads to the increase in the ratio Ie-lh/Ie-hh of the PLE intensities for the light hole (lh) and the heavy hole (hh), indicating the presence of the valence band mixing. We also theoretically calculated the hh-lh mixing in the QW due to the nearby QD strain and evaluated the PLE ratio Ie-lh/Ie-hh.

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