High-field electron mobility and temperature in bulk semiconductors

1984 ◽  
Vol 30 (12) ◽  
pp. 7297-7298 ◽  
Author(s):  
Vijay K. Arora
Keyword(s):  
Electron Mobility ◽  
High Field ◽  
Field Electron ◽  
Bulk Semiconductors

High-Field Electron Mobility Model for Strained-Silicon Devices

2006 ◽  
Vol 53 (12) ◽  
pp. 3054-3062 ◽  
Author(s):  
Siddhartha Dhar ◽  
Hans Kosina ◽  
Gerhard Karlowatz ◽  
Stephan Enzo Ungersboeck ◽  
Tibor Grasser ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Field ◽  
Mobility Model ◽  
Strained Silicon ◽  
Silicon Devices ◽  
Field Electron

A Tensorial High-Field Electron Mobility Model for Strained Silicon

2006 ◽  
Author(s):  
S. Dhar ◽  
H. Kosina ◽  
G. Karlowatz ◽  
E. Ungersboeck ◽  
T. Grasser ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Field ◽  
Mobility Model ◽  
Strained Silicon ◽  
Field Electron

High-field electron mobility model of vertical charge transport in Al/Al2O3/GaN/AlGaN/GaN heterostructures

2018 ◽  
Author(s):  
Juraj Racko ◽  
Miroslav Mikolášek ◽  
Tibor Lalinský ◽  
Alena Grmanová ◽  
Peter Benko ◽  
...  
Keyword(s):  
Charge Transport ◽  
Electron Mobility ◽  
High Field ◽  
Mobility Model ◽  
Field Electron

A Tensorial High-Field Electron Mobility Model for Strained Silicon

2006 ◽  
Author(s):  
S. Dhar ◽  
H. Kosina ◽  
G. Karlowatz ◽  
E. Ungersboeck ◽  
T. Grasser ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Field ◽  
Mobility Model ◽  
Strained Silicon ◽  
Field Electron

A Tensorial High-Field Electron Mobility Model for Strained Silicon

2006 ◽  
Author(s):  
S. Dhar ◽  
H. Kosina ◽  
G. Karlowatz ◽  
E. Ungersboeck ◽  
T. Grasser ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Field ◽  
Mobility Model ◽  
Strained Silicon ◽  
Field Electron

High-field electron mobility in InGaAs quantum wells

2009 ◽  
Vol 6 (12) ◽  
pp. 2713-2715 ◽  
Author(s):  
Juras PozÌŒela ◽  
Karolis PozÌŒela ◽  
Alexey Shkolnik ◽  
Algirdas SuzÌŒiedėlis ◽  
Vida Jucienė ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electron Mobility ◽  
High Field ◽  
Field Electron

Influence of high-field electron injection regimes on modification of dielectric films of MOS devices

2010 ◽  
Vol 1 (2) ◽  
pp. 105-109
Author(s):  
V. V. Andreev ◽  
G. G. Bondarenko ◽  
A. A. Stolyarov ◽  
D. S. Vasyutin ◽  
A. M. Mikhal’kov
Keyword(s):  
High Field ◽  
Electron Injection ◽  
Dielectric Films ◽  
Mos Devices ◽  
Field Electron
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