Electronic structure of oxygen in gallium phosphide

1983 ◽  
Vol 28 (10) ◽  
pp. 6104-6106 ◽  
Author(s):  
M. Jaros ◽  
P. J. Dean
Keyword(s):  
Electronic Structure ◽  
Gallium Phosphide

Evolution of electronic structure as a function of size in gallium phosphide semiconductor clusters

1998 ◽  
Vol 297 (1-2) ◽  
pp. 133-140 ◽  
Author(s):  
Travis R. Taylor ◽  
Knut R. Asmis ◽  
Cangshan Xu ◽  
Daniel M. Neumark
Keyword(s):  
Electronic Structure ◽  
Gallium Phosphide ◽  
Semiconductor Clusters

scholarly journals The impact of non-ideal surfaces on the solid-water interaction: a time-resolved adsorption study

2019 ◽  
Vol 6 (5) ◽  
Author(s):  
Matthias May ◽  
Helena Stange ◽  
Jonas Weinrich ◽  
Thomas Hannappel ◽  
Oliver Supplie
Keyword(s):  
Electronic Structure ◽  
Gallium Phosphide ◽  
Exact Nature ◽  
Time Resolved ◽  
Surface Steps ◽  
Qualitative Nature ◽  
Solid Liquid Interface ◽  
Solid Liquid ◽  
The Impact

The initial interaction of water with semiconductors determines the electronic structure of the solid–liquid interface. The exact nature of this interaction is, however, often unknown. Here, we study gallium phosphide-based surfaces exposed to H_22O by means of in situ reflection anisotropy spectroscopy. We show that the introduction of typical imperfections in the form of surface steps or trace contaminants not only changes the dynamics of the interaction, but also its qualitative nature. This emphasises the challenges for the comparability of experiments with (idealised) electronic structure models for electrochemistry.

Electronic structure and optical properties of doped gallium phosphide: A first-principles simulation

2017 ◽  
Vol 381 (35) ◽  
pp. 2986-2992 ◽  
Author(s):  
Xuefeng Lu ◽  
Xu Gao ◽  
Cuixia Li ◽  
Junqiang Ren ◽  
Xin Guo ◽  
...  
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
First Principles ◽  
Gallium Phosphide

scholarly journals Electronic Structure and Optical Properties of Gaas1-Xpx: A First-Principles Study

2020 ◽  
pp. 77-82
Author(s):  
Alaa A. Al-Jobory ◽  
Wael, I. Ahmed ◽  
Ibrahim J. A.
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Charge Transfer ◽  
First Principles ◽  
Density Functional ◽  
Gallium Phosphide ◽  
Two Dimensional ◽  
Density Of State ◽  
Electrical And Optical Properties ◽  
State Band

In this work, the effects of x-value on electrical and optical properties was studied for the two dimensional (2D)GaAs1-xPxstructure by applying the density functional theory.We found that the gallium arsenide(GaAs) and gallium phosphide(GaP) monolayers are bound to each other, while the charge transfer between these two materialsleads to tuning the band gap value between 1.5 eV for GaAs to 2.24 eV for GaP. The density of state, band structure, and optical properties are investigated in this paper.

scholarly journals Electronic Structure of Gallium Phosphide Nanocrystals Core and (001)-(1 × 1) Oxidized Surface

2012 ◽  
Vol 02 (04) ◽  
pp. 267-274
Author(s):  
Mudar A. Abdulsattar ◽  
Mohammed T. Hussein ◽  
Raied K. Jamal ◽  
Thekra Kasim
Keyword(s):  
Electronic Structure ◽  
Gallium Phosphide

EELS Measurement of the Local Electronic Structure of Copper Atoms Segregated to Aluminum Grain Boundaries

1996 ◽  
Vol 54 ◽  
pp. 342-343
Author(s):  
S.J. Splinter ◽  
J. Bruley ◽  
P.E. Batson ◽  
D.A. Smith ◽  
R. Rosenberg
Keyword(s):  
Electronic Structure ◽  
Grain Boundaries ◽  
Boundary Segregation ◽  
Thin Layers ◽  
Nominal Composition ◽  
Spatially Resolved ◽  
Service Lifetime ◽  
Heat Treated ◽  
Probe Size ◽  
Local Electronic Structure

It has long been known that the addition of Cu to Al interconnects improves the resistance to electromigration failure. It is generally accepted that this improvement is the result of Cu segregation to Al grain boundaries. The exact mechanism by which segregated Cu increases service lifetime is not understood, although it has been suggested that the formation of thin layers of θ-CuA12 (or some metastable substoichiometric precursor, θ’ or θ”) at the boundaries may be necessary. This paper reports measurements of the local electronic structure of Cu atoms segregated to Al grain boundaries using spatially resolved EELS in a UHV STEM. It is shown that segregated Cu exists in a chemical environment similar to that of Cu atoms in bulk θ-phase precipitates.Films of 100 nm thickness and nominal composition Al-2.5wt%Cu were deposited by sputtering from alloy targets onto NaCl substrates. The samples were solution heat treated at 748K for 30 min and aged at 523K for 4 h to promote equilibrium grain boundary segregation. EELS measurements were made using a Gatan 666 PEELS spectrometer interfaced to a VG HB501 STEM operating at 100 keV. The probe size was estimated to be 1 nm FWHM. Grain boundaries with the narrowest projected width were chosen for analysis. EDX measurements of Cu segregation were made using a VG HB603 STEM.

Electronic structure studies of conducting polymers by electron energy-loss spectroscopy

1996 ◽  
Vol 54 ◽  
pp. 160-161
Author(s):  
J. Fink
Keyword(s):  
Electronic Structure ◽  
Conducting Polymers ◽  
Conjugated Polymers ◽  
Electron Acceptors ◽  
Electron Donors ◽  
Light Emitting ◽  
One Dimensional ◽  
New Class ◽  
Electrical Conductivities ◽  
Electron Energy Loss

Conducting polymers comprises a new class of materials achieving electrical conductivities which rival those of the best metals. The parent compounds (conjugated polymers) are quasi-one-dimensional semiconductors. These polymers can be doped by electron acceptors or electron donors. The prototype of these materials is polyacetylene (PA). There are various other conjugated polymers such as polyparaphenylene, polyphenylenevinylene, polypoyrrole or polythiophene. The doped systems, i.e. the conducting polymers, have intersting potential technological applications such as replacement of conventional metals in electronic shielding and antistatic equipment, rechargable batteries, and flexible light emitting diodes.Although these systems have been investigated almost 20 years, the electronic structure of the doped metallic systems is not clear and even the reason for the gap in undoped semiconducting systems is under discussion.

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