High field conduction and dielectric breakdown in nominally pure and nickel-doped MgO crystals at high temperatures

1982 ◽  
Vol 26 (12) ◽  
pp. 6909-6917 ◽  
Author(s):  
K. L. Tsang ◽  
Y. Chen ◽  
J. J. O'Dwyer
Keyword(s):  
High Temperatures ◽  
High Field ◽  
Dielectric Breakdown

The Dielectric Breakdown in Gate Oxides under High Field Stress

2019 ◽  
Vol 19 (2) ◽  
pp. 177-194 ◽  
Author(s):  
Salvatore A. Lombardo ◽  
James H. Stathis ◽  
Gennadi Bersuker
Keyword(s):  
High Field ◽  
Dielectric Breakdown ◽  
Gate Oxides ◽  
Field Stress

High Field Transport Phenomena in n-InSb at High Temperatures

1970 ◽  
Vol 28 (6) ◽  
pp. 1461-1468 ◽  
Author(s):  
M. S. Sodha ◽  
Jyoti Kamal ◽  
P. K. Dubey
Keyword(s):  
High Temperatures ◽  
High Field ◽  
Transport Phenomena

Time-Dependent Dielectric Breakdown in Thin Intrinsic SiO2 Films

1995 ◽  
Vol 386 ◽  
Author(s):  
J. S. Suehle ◽  
P. Chaparala
Keyword(s):  
Electric Field ◽  
Electric Fields ◽  
High Temperatures ◽  
Dielectric Breakdown ◽  
Operating Conditions ◽  
Time Dependent ◽  
Stress Tests ◽  
Time Dependent Dielectric Breakdown ◽  
Wide Range ◽  
Very High

ABSTRACTTime-Dependent Dielectric Breakdown studies were performed on 6.5-, 9-, 15-, 20-, and 22.5- nm thick SiO2 films over a wide range of stress temperatures and electric fields. Very high temperatures (400 °C) were used to accelerate breakdown so that stress tests could be performed at low electric fields close to those used for device operating conditions. The results indicate that the dependence of TDDB on electric field and temperature is different from that reported in earlier studies. Specifically, the electric-field-acceleration parameter is independent of temperature and the thermal activation energy was determined to be between 0.7 and 0.9 eV for stress fields below 7.0 MV/cm.Failure distributions of high-quality current-generation oxide films are shown to be of single mode and have dispersions that are not sensitive to stress electric field or temperature, unlike distributions observed for oxides examined in earlier studies. These results have implications on the choice of the correct physical model to describe TDDB in thin films. The data also demonstrate for the first time the reliability of silicon dioxide films at very high temperatures.

Time-Dependent Dielectric Breakdown in Thin Intrinsic SiO2 Films

1995 ◽  
Vol 391 ◽  
Author(s):  
J. S. Suehle ◽  
P. Chaparala
Keyword(s):  
Electric Field ◽  
Electric Fields ◽  
High Temperatures ◽  
Dielectric Breakdown ◽  
Operating Conditions ◽  
Time Dependent ◽  
Stress Tests ◽  
Time Dependent Dielectric Breakdown ◽  
Wide Range ◽  
Very High

AbstractTime-Dependent Dielectric Breakdown studies were performed on 6.5-, 9-, 15-, 20-, and 22.5-nm thick SiO2 films over a wide range of stress temperatures and electric fields. Very high temperatures (400 °C) were used to accelerate breakdown so that stress tests could be performed at low electric fields close to those used for device operating conditions. The results indicate that the dependence of TDDB on electric field and temperature is different from that reported in earlier studies. Specifically, the electric-field-acceleration parameter is independent of temperature and the thermal activation energy was determined to be between 0.7 and 0.9 eV for stress fields below 7.0 MV/cm.Failure distributions of high-quality current-generation oxide films are shown to be of single mode and have dispersions that are not sensitive to stress electric field or temperature, unlike distributions observed for oxides examined in earlier studies. These results have implications on the choice of the correct physical model to describe TDDB in thin films. The data also demonstrate for the first time the reliability of silicon dioxide films at very high temperatures.

The influence of interelectronic collisions on conduction and breakdown in polar crystals

1958 ◽  
Vol 246 (1246) ◽  
pp. 406-422 ◽  
Keyword(s):  
High Temperatures ◽  
Electron Scattering ◽  
Indium Antimonide ◽  
Low Temperatures ◽  
Dielectric Breakdown ◽  
Breakdown Field ◽  
Scattering Mechanism ◽  
Momentum Distributions ◽  
Energy And Momentum ◽  
Field Approaches

The variation of the electron mobility with an increasing applied field and also the collective dielectric breakdown field, are calculated assuming that interelectronic collisions are sufficiently frequent to determine the energy and momentum distributions of the electron gas. At high temperatures a small increase (by a factor less than 2) and at low temperatures a large decrease (by a factor greater than 10) in the mobility should be observed as the field approaches the breakdown value. It is also shown that the mobility variation at high temperatures will be substantially the same if interelectronic collisions are not predominant, but at low temperatures there will be no variation at all. The application of these results to semi-conductors where the electron scattering mechanism is uncertain is discussed with special reference to indium antimonide.

High-Field Conduction and Electrical Breakdown of Polyethylene at High Temperatures

1985 ◽  
Vol 24 (Part 1, No. 8) ◽  
pp. 988-996 ◽  
Author(s):  
Masayuki Hikita ◽  
Seiji Tajima ◽  
Ippei Kanno ◽  
Iwao Ishino ◽  
Goro Sawa ◽  
...  
Keyword(s):  
High Temperatures ◽  
High Field ◽  
Electrical Breakdown

Structured Polyethylene Nanocomposites: Effects of Crystal Orientation and Nanofiller Alignment on High Field Dielectric Properties

MRS Advances ◽  
2016 ◽  
Vol 2 (6) ◽  
pp. 363-368 ◽  
Author(s):  
Bo Li ◽  
C. I. Camilli ◽  
P. I. Xidas ◽  
K. S. Triantafyllidis ◽  
E. Manias
Keyword(s):  
Crystal Orientation ◽  
High Field ◽  
Dielectric Breakdown ◽  
Breakdown Strength ◽  
Film Surface ◽  
Nanocomposite Films ◽  
X Ray Diffraction ◽  
Polyethylene Matrix ◽  
X Ray ◽  
Orientation Order

ABSTRACTIn previous work we have shown that aligned high aspect-ratio (pseudo-2D) nanofillers can yield large dielectric breakdown strength (EBD) improvements for a nanocomposite with a low-crystallinity polyethylene matrix. Here, we report a systematic study which delineates the contributions of the aligned inorganic fillers and of the aligned polymer crystallites in the overall EBD improvement achieved in the nanocomposites. Specifically, extrusion blown-molded polyethylene/montmorillonite nanocomposite films were cold-stretched to various strains, to further align the nanoparticles parallel to the film surface; this filler alignment is accompanied by a commensurate alignment of the polymer crystallites, especially those heterogeneously nucleated by the fillers. A systematic series of films are studied, with increased extent of alignment of the fillers and of the crystalline lamellae (quantified through Hermans orientation order parameters from 2D X-ray diffraction studies) and the aligned structure is correlated to the electric field breakdown strength (quantified through Weibull failure studies). It is shown that aligned pseudo-2D inorganic nanofillers provide additional strong improvements in EBD, improvements that are beyond, and added in excess of, any EBD increases due to polymer-crystal orientation.

Accelerated Testing of SiC Power Devices under High-Field Operating Conditions

2020 ◽  
Vol 1004 ◽  
pp. 992-997
Author(s):  
Daniel J. Lichtenwalner ◽  
Shadi Sabri ◽  
Edward Van Brunt ◽  
Brett Hull ◽  
Sei Hyung Ryu ◽  
...  
Keyword(s):  
High Field ◽  
Dielectric Breakdown ◽  
Field Effect Transistors ◽  
Short Circuit ◽  
Gate Oxide ◽  
Operating Conditions ◽  
Oxide Semiconductor ◽  
Normal Operation ◽  
Time Dependent Dielectric Breakdown ◽  
Stability Time

Power metal-oxide-semiconductor field-effect transistors (MOSFETs) experience conditions of high field during normal operation. During switching conditions, unexpected transient events may occur which force devices into avalanche or short circuit conditions. Moreover, silicon carbide devices typically experience higher fields in the gate oxide and drift regions than comparable Si devices due to channel and drift property differences. A summary of SiC MOSFET reliability and ruggedness test results are reported here. Reliability tests under high field conditions: positive-bias and negative-bias temperature instability (PBTI, NBTI) to examine threshold stability; time-dependent dielectric breakdown (TDDB) for gate oxide lifetime extrapolation; high-temperature reverse bias (HTRB); and HTRB testing under high neutron flux to determine terrestrial neutron single-event burnout (SEB) rates. High-power ruggedness evaluation is presented for SiC MOSFETs under forced avalanche conditions (unclamped inductive switching (UIS)) and under short-circuit operation to bound device safe operating areas. Overall results demonstrate the intrinsic reliability of SiC MOSFETs.

Sign in / Sign up

Export Citation Format

Share Document