Suppression of dielectric breakdown in MgO crystals at high temperatures by impurity doping

1983 ◽  
Vol 54 (8) ◽  
pp. 4531-4535 ◽  
Author(s):  
K. L. Tsang ◽  
Y. Chen
Keyword(s):  
High Temperatures ◽  
Dielectric Breakdown ◽  
Impurity Doping

Time-Dependent Dielectric Breakdown in Thin Intrinsic SiO2 Films

1995 ◽  
Vol 386 ◽  
Author(s):  
J. S. Suehle ◽  
P. Chaparala
Keyword(s):  
Electric Field ◽  
Electric Fields ◽  
High Temperatures ◽  
Dielectric Breakdown ◽  
Operating Conditions ◽  
Time Dependent ◽  
Stress Tests ◽  
Time Dependent Dielectric Breakdown ◽  
Wide Range ◽  
Very High

ABSTRACTTime-Dependent Dielectric Breakdown studies were performed on 6.5-, 9-, 15-, 20-, and 22.5- nm thick SiO2 films over a wide range of stress temperatures and electric fields. Very high temperatures (400 °C) were used to accelerate breakdown so that stress tests could be performed at low electric fields close to those used for device operating conditions. The results indicate that the dependence of TDDB on electric field and temperature is different from that reported in earlier studies. Specifically, the electric-field-acceleration parameter is independent of temperature and the thermal activation energy was determined to be between 0.7 and 0.9 eV for stress fields below 7.0 MV/cm.Failure distributions of high-quality current-generation oxide films are shown to be of single mode and have dispersions that are not sensitive to stress electric field or temperature, unlike distributions observed for oxides examined in earlier studies. These results have implications on the choice of the correct physical model to describe TDDB in thin films. The data also demonstrate for the first time the reliability of silicon dioxide films at very high temperatures.

Time-Dependent Dielectric Breakdown in Thin Intrinsic SiO2 Films

1995 ◽  
Vol 391 ◽  
Author(s):  
J. S. Suehle ◽  
P. Chaparala
Keyword(s):  
Electric Field ◽  
Electric Fields ◽  
High Temperatures ◽  
Dielectric Breakdown ◽  
Operating Conditions ◽  
Time Dependent ◽  
Stress Tests ◽  
Time Dependent Dielectric Breakdown ◽  
Wide Range ◽  
Very High

AbstractTime-Dependent Dielectric Breakdown studies were performed on 6.5-, 9-, 15-, 20-, and 22.5-nm thick SiO2 films over a wide range of stress temperatures and electric fields. Very high temperatures (400 °C) were used to accelerate breakdown so that stress tests could be performed at low electric fields close to those used for device operating conditions. The results indicate that the dependence of TDDB on electric field and temperature is different from that reported in earlier studies. Specifically, the electric-field-acceleration parameter is independent of temperature and the thermal activation energy was determined to be between 0.7 and 0.9 eV for stress fields below 7.0 MV/cm.Failure distributions of high-quality current-generation oxide films are shown to be of single mode and have dispersions that are not sensitive to stress electric field or temperature, unlike distributions observed for oxides examined in earlier studies. These results have implications on the choice of the correct physical model to describe TDDB in thin films. The data also demonstrate for the first time the reliability of silicon dioxide films at very high temperatures.

The influence of interelectronic collisions on conduction and breakdown in polar crystals

1958 ◽  
Vol 246 (1246) ◽  
pp. 406-422 ◽  
Keyword(s):  
High Temperatures ◽  
Electron Scattering ◽  
Indium Antimonide ◽  
Low Temperatures ◽  
Dielectric Breakdown ◽  
Breakdown Field ◽  
Scattering Mechanism ◽  
Momentum Distributions ◽  
Energy And Momentum ◽  
Field Approaches

The variation of the electron mobility with an increasing applied field and also the collective dielectric breakdown field, are calculated assuming that interelectronic collisions are sufficiently frequent to determine the energy and momentum distributions of the electron gas. At high temperatures a small increase (by a factor less than 2) and at low temperatures a large decrease (by a factor greater than 10) in the mobility should be observed as the field approaches the breakdown value. It is also shown that the mobility variation at high temperatures will be substantially the same if interelectronic collisions are not predominant, but at low temperatures there will be no variation at all. The application of these results to semi-conductors where the electron scattering mechanism is uncertain is discussed with special reference to indium antimonide.

Gate Electrode Effects On Dielectric Breakdown Of SiO2

1996 ◽  
Vol 446 ◽  
Author(s):  
Akira Toriumi ◽  
Yuichiro Mitani ◽  
Hideki Satake
Keyword(s):  
Network Structure ◽  
Electrode Material ◽  
Silicon Substrate ◽  
Dielectric Breakdown ◽  
Oxide Thickness ◽  
Experimental Results ◽  
Gate Electrode ◽  
Impurity Doping ◽  
Hole Current ◽  
Mos Structures

AbstractWe discuss the gate electrode effects on SiO2 degradation in MOS structures. The gate electrode material was poly‐silicon, but the impurity doping procedure was varied in terms of species and concentrations. First, the origin of the substrate hole current observed in n‐MOSFETs, by injecting electrons from the silicon substrate, is discussed in terms of oxide thickness and gate electrode doping species, because the dielectric breakdown is closely related to the total hole fluence in the oxide. The effects of the gate electrode on the oxide network structure and on the Si/SiO2 interface are also experimentally investigated. Finally, the experimental results obtained for Qbd of different gate electrode MOSFETs are shown, including the polarity dependence of Qbd. Furthermore, the percolation analysis to explain the polarity dependence is introduced, since the dielectric breakdown process is really stochastic.

Effects of Electrical Discharges in Low Pressure Gases on the Morphology of Polyethylene Crystals

1974 ◽  
Vol 32 ◽  
pp. 544-545
Author(s):  
L.H. Bolz ◽  
D.H. Reneker
Keyword(s):  
Power Distribution ◽  
Electrical Discharge ◽  
Dielectric Breakdown ◽  
Ionic Species ◽  
Low Pressure ◽  
Polymer Surfaces ◽  
Electrical Discharges ◽  
Adhesive Bonds ◽  
Power Distribution Lines ◽  
Modification Of The Surface

The attack, on the surface of a polymer, by the atomic, molecular and ionic species that are created in a low pressure electrical discharge in a gas is interesting because: 1) significant interior morphological features may be revealed, 2) dielectric breakdown of polymeric insulation on high voltage power distribution lines involves the attack on the polymer of such species created in a corona discharge, 3) adhesive bonds formed between polymer surfaces subjected to such SDecies are much stronger than bonds between untreated surfaces, 4) the chemical modification of the surface creates a reactive surface to which a thin layer of another polymer may be bonded by glow discharge polymerization.

In situ REM imaging of surface processes on ceramic bulk crystals from 300 to 1670 K in a conventional TEM

1991 ◽  
Vol 49 ◽  
pp. 660-661
Author(s):  
Z. L. Wang ◽  
J. Bentley
Keyword(s):  
High Temperatures ◽  
Image Resolution ◽  
Atomic Processes ◽  
Crystal Surfaces ◽  
Beam Radiation ◽  
Surface Areas ◽  
Transmission Electron ◽  
Reflection Electron Microscopy ◽  
Gas Reactions

Studying the behavior of surfaces at high temperatures is of great importance for understanding the properties of ceramics and associated surface-gas reactions. Atomic processes occurring on bulk crystal surfaces at high temperatures can be recorded by reflection electron microscopy (REM) in a conventional transmission electron microscope (TEM) with relatively high resolution, because REM is especially sensitive to atomic-height steps.Improved REM image resolution with a FEG: Cleaved surfaces of a-alumina (012) exhibit atomic flatness with steps of height about 5 Å, determined by reference to a screw (or near screw) dislocation with a presumed Burgers vector of b = (1/3)<012> (see Fig. 1). Steps of heights less than about 0.8 Å can be clearly resolved only with a field emission gun (FEG) (Fig. 2). The small steps are formed by the surface oscillating between the closely packed O and Al stacking layers. The bands of dark contrast (Fig. 2b) are the result of beam radiation damage to surface areas initially terminated with O ions.

Sign in / Sign up

Export Citation Format

Share Document