Electron-phonon effects in copper. I. Electron scattering rate and mass enhancement

1982 ◽  
Vol 26 (4) ◽  
pp. 1538-1548 ◽  
Author(s):  
F. S. Khan ◽  
P. B. Allen ◽  
W. H. Butler ◽  
F. J. Pinski
Keyword(s):  
Electron Scattering ◽  
Scattering Rate ◽  
Mass Enhancement

Model of Electron Scattering of Strained Si /Si1-xGex (100)

2011 ◽  
Vol 110-116 ◽  
pp. 3338-3342
Author(s):  
Jian Jun Song ◽  
Hua Ying Wu ◽  
He Ming Zhang ◽  
Hui Yong Hu ◽  
Heng Sheng Shan
Keyword(s):  
Electron Scattering ◽  
Electron Mobility ◽  
Acoustic Phonon ◽  
Golden Rule ◽  
Collision Term ◽  
Strained Si ◽  
Total Electron ◽  
Total Scattering ◽  
Scattering Rate ◽  
Term Approximation

Based on Fermi's golden rule and the theory of Boltzmann collision term approximation, taking into account all the scattering mechanisms contributed by ionized impurity, acoustic phonon and intervalley phonon, the model of total scattering rate of strained Si/(100) Si1-xGex is established. Simulating of the scattering models with Matlab software, it was found that the total scattering rate of electron in strained Si/(100) Si1-xGex decreases obviously with the increasing stress when Ge fraction x is less than 0.2 and the values continue to show a constant tendency, and that the total electron scattering rate of strained Si/(100) Si1-xGex decreases about 57% at most comparison with one of unstrained Si. The result can provide valuable references to the research of electron mobility of strained Si materials and the design of NMOS devices.

Electron–electron scattering rate in CdTe/CdMnTe single quantum well

2021 ◽  
pp. 2150221
Author(s):  
Zhaosai Jia ◽  
Hailong Wang ◽  
Chuanhe Ma ◽  
Xin Cao ◽  
Qian Gong
Keyword(s):  
Kinetic Energy ◽  
Quantum Well ◽  
Electron Scattering ◽  
Electron Transition ◽  
Collision Probability ◽  
Electron Collision ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Scattering Rate ◽  
Composition Formula

CdMnTe is demonstrated to be a good candidate in the X-ray and [Formula: see text]-ray detector application, however, there are few reports on theoretical analysis of electron scattering rate in CdMnTe quantum well. Within the framework of effective mass approximation and envelope function approximation, the influence of the Mn alloy composition ([Formula: see text], the well width ([Formula: see text], the electron temperature ([Formula: see text] and the electron density ([Formula: see text] on the electron–electron scattering rate (1/[Formula: see text] in the CdTe/Cd[Formula: see text]Mn[Formula: see text]Te single quantum well (SQW), are simulated by shooting method and Fermi’s Golden Rule. The results show that 1/[Formula: see text] is significant inverse proportional to [Formula: see text], but positively proportional to [Formula: see text] and [Formula: see text]. Except for a small peak at 20 K, 1/[Formula: see text] is not sensitive to [Formula: see text]. The above differential dependency of 1/[Formula: see text] on [Formula: see text] and [Formula: see text] can be interpreted by sub-band separation ([Formula: see text], which is proportional to [Formula: see text] but inversely proportional to [Formula: see text]. When [Formula: see text] decreases gradually, the electron transition becomes easier, which leads to 1/[Formula: see text] increases. The dependency of 1/[Formula: see text] on [Formula: see text] can be interpreted by kinetic energy of electrons. The larger the electron kinetic energy is, the more difficult the electron transition from first excited state to ground state is, which leads to 1/[Formula: see text] decreasing. The dependency of 1/[Formula: see text] on [Formula: see text] can be interpreted by the Coulomb interaction between electrons, i.e., the increase of electron collision probability caused by the increase of [Formula: see text].

Review lecture - Quantum processes in semiconductor structures

1988 ◽  
Vol 420 (1858) ◽  
pp. 1-19 ◽  
Keyword(s):  
Electron Scattering ◽  
Low Temperatures ◽  
Quantum Interference ◽  
Short Review ◽  
Two Dimensions ◽  
Quantum Processes ◽  
Semiconductor Structures ◽  
Scattering Rate ◽  
Effect Of Disorder ◽  
Effective Dimensionality

A short review is given on quantum interference and interaction effects in semiconductor structures. It is shown that these effects give rise to observable corrections in the conductivity at low temperatures and can be separated by the behaviour of the magnetoresistance. Results are presented on the dimensionality dependence of the interference and it is shown that when a magnetic field determines the magnitude of the effect, this can be used to change the effective dimensionality of the system. The use of magnetoresistance in the extraction of electron–electron scattering rates is discussed and it is shown that in two dimensions the effect of disorder on the elec­tron–electron scattering rate can be observed.

Hot Electron Scattering Rate in p-Doped MQW Structures GaAs/AlAs

1997 ◽  
Vol 204 (1) ◽  
pp. 181-183
Author(s):  
I. I. Reshina ◽  
D. N. Mirlin ◽  
V. I. Perel ◽  
A. Yu. Dobin ◽  
A. G. Arganov
Keyword(s):  
Electron Scattering ◽  
Hot Electron ◽  
Scattering Rate

EFFECTS OF CORRELATIONS AND DISORDER IN QUANTUM WIRES

1999 ◽  
Vol 13 (05n06) ◽  
pp. 489-495
Author(s):  
D. NEILSON ◽  
J. S. THAKUR
Keyword(s):  
Electron Scattering ◽  
Quantum Wires ◽  
Mean Free Path ◽  
Static Structure Factor ◽  
Correlation Effects ◽  
Static Structure ◽  
Scattering Rate ◽  
Effects Of Disorder ◽  
Electron Correlation Effects ◽  
The Mean

We calculate electron-electron correlation effects in a one-dimensional electron liquid at low densities using the self-consistent scheme of Singwi, Tosi, Land and Sjölander (STLS). We determine the static structure factor S(q) and plasmon dispersion ω pl (q) for different electron densities. We also include the effects of disorder and calculate the dependence of correlation effects on the electron scattering rate off disorder. Using the scattering rate γ we determine transport properties like the mean-free path, the peak mobility and the boundary between weak and strong localisation phases. We note a relation between the peak mobility and this boundary.

Electron–electron inter-subband scattering in GaAs quantum wells

1996 ◽  
Vol 74 (S1) ◽  
pp. 252-255
Author(s):  
Zhi Zhong Xu ◽  
D. Morris
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Electron Scattering ◽  
Multiple Quantum Well ◽  
Golden Rule ◽  
Multiple Quantum ◽  
Hot Electron ◽  
Quantum Well Structures ◽  
Scattering Rate ◽  
Relaxation Channel

The role of electron–electron scattering in the dynamics of inter-subband relaxation in GaAs quantum wells is investigated theoretically. The scattering rate is calculated using the Fermi golden rule, as a function of the carrier densities. The dependence of the inter-subband relaxation time on the quantum-well width is also investigated. Calculations are performed for multiple quantum-well structures with well widths varying from 80 to 240 Å (1 Å = 10−10 m). The hot electron distribution and the subband occupation function are taken into account in these calculations. Results show that the electron–electron scattering rate increases linearly as a function of the carrier densities. A band-filling effect limits the efficiency of this mechanism under high carrier densities (> 1012 cm−2). For thick well (180 Å) structures, this relaxation channel is as efficient as the phonon relaxation channel.

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