Role of point defects in the growth of the oxidation-induced stacking faults in silicon. II. Retrogrowth, effect of HCl oxidation and orientation
2015 ◽
Vol 462
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pp. 160-164
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1991 ◽
Vol 19-20
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pp. 45-50
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2001 ◽
Vol 353-356
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pp. 323-326
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