scholarly journals Exciton-exciton and exciton–charge carrier interaction and exciton collisional broadening in GaAs/AlGaAs quantum wells

2021 ◽  
Vol 104 (20) ◽  
Author(s):  
B. F. Gribakin ◽  
E. S. Khramtsov ◽  
A. V. Trifonov ◽  
I. V. Ignatiev
Keyword(s):  
Charge Carrier ◽  
Quantum Wells ◽  
Collisional Broadening ◽  
Carrier Interaction

scholarly journals Charge Carrier Cooling Bottleneck Opens Up Nonexcitonic Gain Mechanisms in Colloidal CdSe Quantum Wells

2019 ◽  
Vol 123 (14) ◽  
pp. 9640-9650 ◽  
Author(s):  
Renu Tomar ◽  
Aditya Kulkarni ◽  
Kai Chen ◽  
Shalini Singh ◽  
Dries van Thourhout ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Quantum Wells

The intrinsic free carrier mobility in AlGaN/GaN quantum wells

2004 ◽  
Vol 831 ◽  
Author(s):  
F. Carosella ◽  
M. Germain ◽  
J.-L. Farvacque
Keyword(s):  
Quantum Wells ◽  
Carrier Mobility ◽  
Electron System ◽  
Relaxation Mechanism ◽  
Free Carrier ◽  
Free Carriers ◽  
Scattering Mechanisms ◽  
Carrier Interaction ◽  
Scattering Strength ◽  
Two Bodies

ABSTRACTThe aim of this contribution is to determine theoretically the maximum mobility that can be expected in AlGaN/GaN quantum wells as soon as the free carriers are only submitted to intrinsic scattering mechanisms associated with phonons and the carrier-carrier interaction. In our model, we consider that the carrier-carrier two bodies collisions do not constitute by themselves a relaxation mechanism since they conserve the momentum and the energy of the electron system. Thus, we assume that the free carriers act only through their contribution to the dynamical dielectric response of the material and, at least, through their collective behavior resulting into plasmons which, when damped, constitute now a real relaxation mechanism. The full scattering strength is connected with the imaginary part of the total reversed dielectric function including the lattice and the free carrier contributions. This approach automatically includes the scattering mechanisms associated with hybrid phonon/plasmon particles.

ESR and LESR X-band study of morphology and charge carrier interaction in blended P3HT–SWCNT and P3HT–PCBM–SWCNT solid thin films

2011 ◽  
Vol 161 (21-22) ◽  
pp. 2241-2248 ◽  
Author(s):  
A. Konkin ◽  
C. Bounioux ◽  
U. Ritter ◽  
P. Scharff ◽  
E.A. Katz ◽  
...  
Keyword(s):  
Thin Films ◽  
Charge Carrier ◽  
X Band ◽  
Solid Thin Films ◽  
Carrier Interaction

scholarly journals Temperature‐Dependent Charge Carrier Diffusion in [0001¯] Direction of GaN Determined by Luminescence Evaluation of Buried InGaN Quantum Wells

2020 ◽  
Vol 257 (6) ◽  
pp. 2000016 ◽  
Author(s):  
Carsten Netzel ◽  
Veit Hoffmann ◽  
Jens W. Tomm ◽  
Felix Mahler ◽  
Sven Einfeldt ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Quantum Wells ◽  
Temperature Dependent ◽  
Carrier Diffusion ◽  
Charge Carrier Diffusion ◽  
Ingan Quantum Wells

scholarly journals Two-dimensional semimetal in wide HgTe quantum wells: Charge-carrier energy spectrum and magnetotransport

2013 ◽  
Vol 47 (12) ◽  
pp. 1562-1566 ◽  
Author(s):  
A. V. Germanenko ◽  
G. M. Minkov ◽  
O. E. Rut ◽  
A. A. Sherstobitov ◽  
S. A. Dvoretsky ◽  
...  
Keyword(s):  
Energy Spectrum ◽  
Charge Carrier ◽  
Quantum Wells ◽  
Two Dimensional ◽  
Carrier Energy

On optical polarization and charge carrier statistics of nonpolar InGaN quantum wells

2015 ◽  
Vol 253 (1) ◽  
pp. 145-157 ◽  
Author(s):  
L. Schade ◽  
T. Wernicke ◽  
J. Rass ◽  
S. Ploch ◽  
M. Weyers ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Quantum Wells ◽  
Optical Polarization ◽  
Ingan Quantum Wells

Many-body carrier interaction effects in quantum wells

1997 ◽  
Vol 55 (8) ◽  
pp. 5147-5152 ◽  
Author(s):  
Alfred Kahan ◽  
Lionel Friedman
Keyword(s):  
Quantum Wells ◽  
Interaction Effects ◽  
Many Body ◽  
Carrier Interaction
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