scholarly journals Interplay of spin magnetism, orbital magnetism, and atomic structure in layered van der Waals ferromagnet VI3

2021 ◽  
Vol 103 (21) ◽  
Author(s):  
L. M. Sandratskii ◽  
K. Carva
Keyword(s):  
Atomic Structure ◽  
Van Der Waals ◽  
Orbital Magnetism ◽  
Spin Magnetism

scholarly journals Adjusting the electronic properties and contact types of graphene/F-diamane-like C4F2 van der Waals heterostructure: a first principles study

RSC Advances ◽  
2021 ◽  
Vol 11 (60) ◽  
pp. 37981-37987
Author(s):  
Thi-Nga Do ◽  
Son-Tung Nguyen ◽  
Cuong Q. Nguyen
Keyword(s):  
Electronic Properties ◽  
Atomic Structure ◽  
First Principles ◽  
Van Der Waals ◽  
First Principles Study ◽  
Van Der Waals Heterostructure

We perform a first principles study to investigate the atomic structure, electronic properties and contact types of the graphene/F-diamane-like C4F2 heterostructure.

scholarly journals Unraveling the 3D Atomic Structure of a Suspended Graphene/hBN van der Waals Heterostructure

Nano Letters ◽  
2017 ◽  
Vol 17 (3) ◽  
pp. 1409-1416 ◽  
Author(s):  
Giacomo Argentero ◽  
Andreas Mittelberger ◽  
Mohammad Reza Ahmadpour Monazam ◽  
Yang Cao ◽  
Timothy J. Pennycook ◽  
...  
Keyword(s):  
Atomic Structure ◽  
Van Der Waals ◽  
Suspended Graphene ◽  
Van Der Waals Heterostructure

scholarly journals Atomic scale chemical ordering in franckeite—a natural van der Waals superlattice

2021 ◽  
Vol 34 (5) ◽  
pp. 055403
Author(s):  
Hannes Zschiesche ◽  
Ayse Melis Aygar ◽  
Brian Langelier ◽  
Thomas Szkopek ◽  
Gianluigi A Botton
Keyword(s):  
Atomic Structure ◽  
Van Der Waals ◽  
Experimental Studies ◽  
Deep Understanding ◽  
Advanced Characterization ◽  
Atom Probe ◽  
Dark Field ◽  
Atomic Scale ◽  
Characterization Methods ◽  
Chemical Ordering

Abstract The mineral franckeite is a naturally occurring van der Waals superlattice which has recently attracted attention for future applications in optoelectronics, biosensors and beyond. Furthermore, its stacking of incommensurately modulated 2D layers, the pseudo tetragonal Q-layer and the pseudo hexagonal H-layer, is an experimentally accessible prototype for the development of synthetic van der Waals materials and of advanced characterization methods to reveal new insights in their structure and chemistry at the atomic scale that is crucial for deep understanding of its properties. While some experimental studies have been undertaken in the past, much is still unknown on the correlation between local atomic structure and chemical composition within the layers. Here we present an investigation of the atomic structure of franckeite using state-of-the-art high-angle annular dark-field (HAADF) scanning transmission electron microscopy (STEM) and atom probe tomography (APT). With atomic-number image contrast in HAADF STEM direct information about both the geometric structure and its chemistry is provided. By imaging samples under different zone axes within the van der Waals plane, we propose refinements to the structure of the Q-layer and H-layer, including several chemical ordering effects that are expected to impact electronic structure calculations. Additionally, we observe and characterize stacking faults which are possible sources of differences between experimentally determined properties and calculations. Furthermore, we demonstrate advantages and discuss current limitations and perspectives of combining TEM and APT for the atomic scale characterization of incommensurately modulated von der Waals materials.

Atomic structure and dynamic reconfiguration of layered defects in van der Waals layered Ge-Sb-Te based materials

2017 ◽  
Vol 141 ◽  
pp. 92-96 ◽  
Author(s):  
Andriy Lotnyk ◽  
Ulrich Ross ◽  
Torben Dankwort ◽  
Isom Hilmi ◽  
Lorenz Kienle ◽  
...  
Keyword(s):  
Atomic Structure ◽  
Van Der Waals ◽  
Dynamic Reconfiguration

Atomic structure and spin magnetism of self-assembled Co nanowires onPt(332)

2006 ◽  
Vol 74 (13) ◽  
Author(s):  
Željko Šljivančanin ◽  
Zoran S. Popović ◽  
Filip R. Vukajlović ◽  
Alfonso Baldereschi
Keyword(s):  
Atomic Structure ◽  
Self Assembled ◽  
Spin Magnetism ◽  
Co Nanowires

Radiation-induced surface decomposition

1983 ◽  
Vol 41 ◽  
pp. 368-369
Author(s):  
M. L. Knotek
Keyword(s):  
Ionizing Radiation ◽  
Atomic Structure ◽  
Chemical Bonding ◽  
Neutral Species ◽  
Radiation Induced ◽  
Physical And Chemical ◽  
Surface Decomposition ◽  
The Relationship ◽  
Electron And Photon ◽  
Surface Bond

Modern surface analysis is based largely upon the use of ionizing radiation to probe the electronic and atomic structure of the surfaces physical and chemical makeup. In many of these studies the ionizing radiation used as the primary probe is found to induce changes in the structure and makeup of the surface, especially when electrons are employed. A number of techniques employ the phenomenon of radiation induced desorption as a means of probing the nature of the surface bond. These include Electron- and Photon-Stimulated Desorption (ESD and PSD) which measure desorbed ionic and neutral species as they leave the surface after the surface has been excited by some incident ionizing particle. There has recently been a great deal of activity in determining the relationship between the nature of chemical bonding and its susceptibility to radiation damage.

Simulated Dark-Field Electron Micrographs of Point Defects and Organometallics

1975 ◽  
Vol 33 ◽  
pp. 200-201
Author(s):  
William Krakow
Keyword(s):  
Electron Micrographs ◽  
Point Defects ◽  
Structure Determination ◽  
Atomic Structure ◽  
Image Interpretation ◽  
Dark Field ◽  
Field Electron ◽  
Dark Field Microscopy ◽  
Dark Field Electron

Tilted beam dark-field microscopy has been applied to atomic structure determination in perfect crystals, several synthesized molecules with heavy atcm markers and in the study of displaced atoms in crystals. Interpretation of this information in terms of atom positions and atom correlations is not straightforward. Therefore, calculated dark-field images can be an invaluable aid in image interpretation.

Surface reconstructions of (001) cleaved GdBa2Cu3O7-δ

1992 ◽  
Vol 50 (1) ◽  
pp. 106-107
Author(s):  
H.W. Zandbergen ◽  
M.R. McCartney
Keyword(s):  
Electron Microscopy ◽  
Copper Oxide ◽  
Grain Boundaries ◽  
Atomic Structure ◽  
Oxygen Deficiency ◽  
Surface Layers ◽  
Layer Sequence ◽  
Surface Reconstructions ◽  
Good Agreement

Very few electron microscopy papers have been published on the atomic structure of the copper oxide based superconductor surfaces. Zandbergen et al. have reported that the surface of YBa2Cu3O7-δ was such that the terminating layer sequence is bulk-Y-CuO2-BaO-CuO-BaO, whereas the interruption at the grain boundaries is bulk-Y-CuO2-BaO-CuO. Bursill et al. reported that HREM images of the termination at the surface are in good agreement with calculated images with the same layer sequence as observed by Zandbergen et al. but with some oxygen deficiency in the two surface layers. In both studies only one or a few surfaces were studied.

High-resolution electron microscopy of the atomic structure of some grain boundaries in Au

1986 ◽  
Vol 44 ◽  
pp. 414-415
Author(s):  
W. Krakow ◽  
D. A. Smith
Keyword(s):  
Atomic Structure ◽  
High Resolution Electron Microscopy ◽  
Image Features ◽  
Image Feature ◽  
Resolution Electron ◽  
Tilt Boundaries ◽  
Processing Techniques ◽  
Atom Position ◽  
Structure Configuration

The successful determination of the atomic structure of [110] tilt boundaries in Au stems from the investigation of microscope performance at intermediate accelerating voltages (200 and 400kV) as well as a detailed understanding of how grain boundary image features depend on dynamical diffraction processes variation with specimen and beam orientations. This success is also facilitated by improving image quality by digital image processing techniques to the point where a structure image is obtained and each atom position is represented by a resolved image feature. Figure 1 shows an example of a low angle (∼10°) Σ = 129/[110] tilt boundary in a ∼250Å Au film, taken under tilted beam brightfield imaging conditions, to illustrate the steps necessary to obtain the atomic structure configuration from the image. The original image of Fig. 1a shows the regular arrangement of strain-field images associated with the cores of ½ [10] primary dislocations which are separated by ∼15Å.

Atomic structure imaging of the Si/SiO2 interface with high-resolution electron microscopy

1986 ◽  
Vol 44 ◽  
pp. 390-391
Author(s):  
J.L. Batstone ◽  
J.M. Gibson ◽  
Alice.E. White ◽  
K.T. Short
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Atomic Structure ◽  
High Resolution Electron Microscopy ◽  
Medium Voltage ◽  
Voltage Electron ◽  
Resolution Electron ◽  
Structural Image ◽  
Electron Microscopes ◽  
Point To Point

High resolution electron microscopy (HREM) is a powerful tool for the determination of interface atomic structure. With the previous generation of HREM's of point-to-point resolution (rpp) >2.5Å, imaging of semiconductors in only <110> directions was possible. Useful imaging of other important zone axes became available with the advent of high voltage, high resolution microscopes with rpp <1.8Å, leading to a study of the NiSi2 interface. More recently, it was shown that images in <100>, <111> and <112> directions are easily obtainable from Si in the new medium voltage electron microscopes. We report here the examination of the important Si/Si02 interface with the use of a JEOL 4000EX HREM with rpp <1.8Å, in a <100> orientation. This represents a true structural image of this interface.

Sign in / Sign up

Export Citation Format

Share Document