scholarly journals Electron ground state g factor in embedded InGaAs quantum dots: An atomistic study

2021 ◽  
Vol 103 (11) ◽  
Author(s):  
Mustafa Kahraman ◽  
Ceyhun Bulutay
Author(s):  
Г.Ф. Глинский ◽  
Д.А. Шапран

The results of numerical calculation of the electron ground state energy and electron density in tunneled InAs/GaAs quantum dots forming a simple cubic superlattice are presented. The calculation is carried out in the framework of a modified effective mass method, taking into account the microscopic (atomic) structure of individual quantum dots, without taking into account the spin-orbit interaction and deformation effects. The dependence of the electron binding energy on the radius of the quantum dot R. It is shown that in the region R < 27 Å the electron binding energy is proportional to R in degree three.


2007 ◽  
Vol 90 (24) ◽  
pp. 242113 ◽  
Author(s):  
E. Aubry ◽  
C. Testelin ◽  
F. Bernardot ◽  
M. Chamarro ◽  
A. Lemaître

2003 ◽  
Vol 93 (9) ◽  
pp. 5325-5330 ◽  
Author(s):  
L. W. Lu ◽  
C. L. Yang. ◽  
J. Wang ◽  
I. K. Sou ◽  
W. K. Ge

2013 ◽  
Vol 63 (11) ◽  
pp. 2269-2272 ◽  
Author(s):  
Seoung-Hwan Park ◽  
Woo-Pyo Hong ◽  
Jong-Jae Kim

1997 ◽  
Vol 56 (24) ◽  
pp. 15740-15743 ◽  
Author(s):  
Augusto Gonzalez ◽  
Bart Partoens ◽  
François M. Peeters

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