scholarly journals Anisotropic spin splitting of the electron ground state in InAs quantum dots

2007 ◽  
Vol 90 (24) ◽  
pp. 242113 ◽  
Author(s):  
E. Aubry ◽  
C. Testelin ◽  
F. Bernardot ◽  
M. Chamarro ◽  
A. Lemaître
Keyword(s):  
Quantum Dots ◽  
Ground State ◽  
Spin Splitting ◽  
Inas Quantum Dots ◽  
Electron Ground State

Photoluminescence and In/Ga Intermixture in InAs/InGaAs DWELL Structures

2009 ◽  
Vol 1242 ◽  
Author(s):  
A. Vivas Hernandez ◽  
I.J. Guerrero Moreno ◽  
E. Velázquez Lozada
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Ground State ◽  
Elastic Stress ◽  
Blue Shift ◽  
Inas Quantum Dots ◽  
Temperature Dependences ◽  
Different Temperatures ◽  
Fitting Parameters ◽  
Varshni Relation

ABSTRACTThe photoluminescence (PL) and photoluminescence temperature dependences have been studied in InAs quantum dots (QDs) embedded in the In0.15Ga1–0.15As/GaAs quantum wells (QWs) with QDs grown at different temperatures (470–535 °C). Ground state (GS) related QD PL peaks shift into the red side with increasing QD growth temperature to 510 °C and the blue shift is observed when the temperature increased to 535 °C. The temperature dependences of GS PL peak positions were fitted on the base of Varshni relation and the fitting parameters were compared with the bulk InAs and the In0.21Ga0.79As allow. This comparison has revealed that for QDs grown at 490–510 °C the PL fitting parameters are the same as for the bulk InAs crystal. The DWELL structures with QDs grown at other temperatures have fitting parameters different from the bulk InAs. Last fact testifies that in these structures the Ga/In inter-diffusion between QDs and a QW has been realized. This Ga/In intermixture can be stimulated not only by the high temperature (535 °C), but by the essential elastic stress as well in the DWELL structure with lower QD densities.

Spin splitting of the electron ground states of InAs quantum dots

2002 ◽  
Vol 80 (22) ◽  
pp. 4229-4231 ◽  
Author(s):  
G. Medeiros-Ribeiro ◽  
M. V. B. Pinheiro ◽  
V. L. Pimentel ◽  
E. Marega
Keyword(s):  
Quantum Dots ◽  
Ground States ◽  
Spin Splitting ◽  
Inas Quantum Dots

Formation of Stacked Self-Assembled InAs Quantum Dots in GaAs Matrix for Laser Applications

1995 ◽  
Vol 417 ◽  
Author(s):  
V. M. Ustinov ◽  
A. Yu. Egorov ◽  
A. E Zhukov ◽  
N. N. Ledentsov ◽  
M. V. Maksimov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Current Density ◽  
Ground State ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Laser Applications ◽  
Inas Quantum Dots ◽  
Gaas Matrix ◽  
Single Sheet ◽  
Thermal Stability Of

AbstractVertically coupled InAs quantum dots have been synthesized by MBE through successive deposition of InAs dot sheets and thin GaAs spacers. The energy of ground state transition in PL spectra has been found to depend on a number of dot sheets and the spacer width. Injection laser based on vertically coupled quantum dots demonstrated lasing via the ground state of quantum dots in the entire 80K-300K temperature range. Lower threshold current density and wider range of the thermal stability of threshold current density as compared to the single sheet quantum dot laser have been observed.

Ground-state exciton emission of InAs quantum dots produced by focused-ion-beam-directed nucleation

2013 ◽  
Vol 133 ◽  
pp. 117-120 ◽  
Author(s):  
J.-E. Lee ◽  
T.W. Saucer ◽  
A.J. Martin ◽  
D. Tien ◽  
J.M. Millunchick ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Ground State ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Inas Quantum Dots ◽  
Exciton Emission
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