scholarly journals Light emission from direct band gap germanium containing split-interstitial defects

2021 ◽  
Vol 103 (8) ◽  
Author(s):  
F. Murphy-Armando ◽  
M. Brehm ◽  
P. Steindl ◽  
M. T. Lusk ◽  
T. Fromherz ◽  
...  
Keyword(s):  
Band Gap ◽  
Light Emission ◽  
Direct Band Gap ◽  
Interstitial Defects ◽  
Direct Band

Direct band gap light emission and detection at room temperature in bulk germanium diodes with HfGe/Ge/TiN structure

2016 ◽  
Vol 602 ◽  
pp. 43-47 ◽  
Author(s):  
Dong Wang ◽  
Takayuki Maekura ◽  
Keisuke Yamamoto ◽  
Hiroshi Nakashima
Keyword(s):  
Band Gap ◽  
Room Temperature ◽  
Light Emission ◽  
Direct Band Gap ◽  
Direct Band

A COMPUTATIONAL DESIGN OF Si-BASED DIRECT BAND-GAP MATERIALS

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4279-4284 ◽  
Author(s):  
HUANG MEI-CHUN ◽  
ZHANG JIAN-LI ◽  
LI HUI-PING ◽  
ZHU ZIZHONG
Keyword(s):  
Band Gap ◽  
Light Emission ◽  
Silicon Layer ◽  
Computational Design ◽  
Structural Formula ◽  
Direct Band Gap ◽  
Direct Band ◽  
Indirect Band Gap ◽  
Three Body ◽  
New Si

A bulk silicon is an indirect band gap semiconductor, the radiative transitions in silicon involves a electron-hole-phonon three-body processes and is therefore making it an inability of light emission. In order to integrate Si-based microelectronics with optical components, a best solution is to design a Si-based material with direct band-gap. Here we suggest a new Si-based superlattice consists of a nano-silicon layer and a VI-atom monolayer with dimer-structures in the interfaces between silicon and VI-atom layers. The structural formula is VI/Si m / VI/Si m / VI , (m = 2n or/and 2n+1, n ≥ 3). A simple form of (2×1) surface reconstruction has been considered in the ab initio calculation of electronic structures for this Si-based superlattices system. It is found from our computational design that a Se/Si 10/ Se/Si 10/ Se superlattice has a direct band-gap at Γ point. As a kind of new Si-based materials, the important potential and advantages in optoelectronic applications will be discussed.

Tailorable Indirect to Direct Band-Gap Double Perovskites with Bright White-Light Emission: Decoding Chemical Structure Using Solid-State NMR

2020 ◽  
Vol 142 (24) ◽  
pp. 10780-10793 ◽  
Author(s):  
Abhoy Karmakar ◽  
Guy M. Bernard ◽  
Alkiviathes Meldrum ◽  
Anton O. Oliynyk ◽  
Vladimir K. Michaelis
Keyword(s):  
Solid State ◽  
Band Gap ◽  
White Light ◽  
Solid State Nmr ◽  
Chemical Structure ◽  
Light Emission ◽  
Double Perovskites ◽  
Direct Band Gap ◽  
Bright White Light ◽  
Direct Band

Optical Studies of Poly (N-Carbazole) (PVK) Blending with Polyvinylpyrrolidone (PVP) Using Tauc/Davis-Mott Model

2013 ◽  
Vol 652-654 ◽  
pp. 527-531 ◽  
Author(s):  
A.N. Alias ◽  
T.I. Tunku Kudin ◽  
Z.M. Zabidi ◽  
M.K. Harun ◽  
Ab Malik Marwan Ali ◽  
...  
Keyword(s):  
Band Gap ◽  
Urbach Energy ◽  
Quartz Substrate ◽  
Optical Studies ◽  
Direct Band Gap ◽  
Mott Model ◽  
Blended Polymer ◽  
Electronic Parameters ◽  
Direct Band ◽  
Indirect Band Gap

The optical absorption spectra of blended poly (N-carbazole) (PVK) with polyvinylpyrrolidone (PVP) in various compositions are investigated. A doctor blade technique was used to coat the blended polymer on a quartz substrate. The electronic parameters such as absorption edge (Ee), allowed direct band gap (Ed), allowed indirect band gap (Ei), Urbach edge (Eu) and steepness parameter (γ) were calculated using Tauc/Davis-Mott Model. The results reveal that the Ee, Ed and Ei increase with increasing of PVP ratio. There also have variation changing in Urbach energy and steepness parameter.

Theoretical Derivations of a Direct Band Gap Semiconductor of SiC Doped with Ge

2014 ◽  
Vol 44 (1) ◽  
pp. 167-176 ◽  
Author(s):  
Adit Ghosh ◽  
Chandrika Varadachari
Keyword(s):  
Band Gap ◽  
Direct Band Gap ◽  
Direct Band
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