scholarly journals Thickness dependence of electronic structure and optical properties of a correlated van der Waals antiferromagnetic NiPS3 thin film

2020 ◽  
Vol 102 (7) ◽  
Author(s):  
Christopher Lane ◽  
Jian-Xin Zhu
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Electronic Structure ◽  
Van Der Waals ◽  
Thickness Dependence

scholarly journals First Principles Study on Electronic Structure and Optical Properties of PMMA Doped InSb–Mn Alloy Polymer Matrix Composite

2022 ◽  
Vol 2022 ◽  
pp. 1-6
Author(s):  
Dhanabalakrishnan Kovilpalayam Palaniswamy ◽  
Pandiyan Arumugan ◽  
Ravindiran Munusami ◽  
A Chinnasamy ◽  
S. Madhu ◽  
...  
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Electronic Structure ◽  
Absorption Coefficient ◽  
Band Gap ◽  
Optical Conductivity ◽  
First Principles ◽  
Dft Method ◽  
Optical Absorption Coefficient ◽  
Group Iii

InSb the group III-V semiconductor with narrow band gap is combined with Mn in various concentrations and that InSb–Mn alloy is doped with poly methyl methacrylate (PMMA). The optical properties and electronic structure of ternary InSb–Mn alloy with PMMA are investigated by first principles calculations using the DFT method. Varying Mn concentrations play an important role in the improvement of the absorption coefficient and optical conductivity. It is observed that the band gap of InSb–Mn: PMMA decreases monotonously with the increase in Mn concentration. Optical properties of InSb–Mn: PMMA, such as the optical absorption coefficient and optical conductivity, are greater than those of pure InSb. InSb–Mn: PMMA alloy is doped with PMMA polymer in order to make a thin film as PMMA is a transparent thermoplastic polymer. These results suggest a promising application of InSb–Mn: PMMA thin film in optoelectronics when the InSb doping is 24% with improved conductivity when compared with other doping ratios. This states the optimum doping ratio and the major finding in the carried out research based on modelling and simulation.

scholarly journals Electronic structure, lattice dynamics, and optical properties of a novel van der Waals semiconductor heterostructure: InGaSe2

2017 ◽  
Vol 96 (3) ◽  
Author(s):  
Wilfredo Ibarra-Hernández ◽  
Hannan Elsayed ◽  
Aldo H. Romero ◽  
Alejandro Bautista-Hernández ◽  
Daniel Olguín ◽  
...  
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Lattice Dynamics ◽  
Van Der Waals ◽  
Semiconductor Heterostructure

Strain dependent electronic structure and optical properties tuning of InN/PtX2 (X=S, Se) van der waals heterostructures

Vacuum ◽  
2019 ◽  
Vol 168 ◽  
pp. 108805 ◽  
Author(s):  
Jiangtao Liu ◽  
Hao Liu ◽  
Aixia Zhang ◽  
Jianli Wang ◽  
Gang Tang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Van Der Waals ◽  
Van Der Waals Heterostructures ◽  
Strain Dependent

Electronic structure and optical properties for blue phosphorene/graphene-like GaN van der Waals heterostructures

2017 ◽  
Vol 17 (12) ◽  
pp. 1714-1720 ◽  
Author(s):  
Jingjing Guo ◽  
Zhongpo Zhou ◽  
Tianxing Wang ◽  
Zhansheng Lu ◽  
Zongxian Yang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Van Der Waals ◽  
Van Der Waals Heterostructures ◽  
Blue Phosphorene

Structural/Property Relationships for Optical Materials

1993 ◽  
Vol 329 ◽  
Author(s):  
Vivien D.
Keyword(s):  
Crystal Structure ◽  
Optical Properties ◽  
Electronic Structure ◽  
Chemical Composition ◽  
Field Strength ◽  
Optical Materials ◽  
Site Occupancy ◽  
Laser Materials ◽  
Crystal Field Strength ◽  
The Matrix

AbstractIn this paper the relationships between the crystal structure, chemical composition and electronic structure of laser materials, and their optical properties are discussed. A brief description is given of the different laser activators and of the influence of the matrix on laser characteristics in terms of crystal field strength, symmetry, covalency and phonon frequencies. The last part of the paper lays emphasis on the means to optimize the matrix-activator properties such as control of the oxidation state and site occupancy of the activator and influence of its concentration.

Physical and Optical Properties of The Films Ð’i2Te3-Bi2Se3

2015 ◽  
Vol 11 (2) ◽  
pp. 3017-3022
Author(s):  
Gurban Akhmedov
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Surface Temperature ◽  
Thermal Evaporation ◽  
Low Voltage ◽  
Internal Surface ◽  
Differential Resistance ◽  
Work Cycle

Results of researches show, that film p-n the structures received by a method of discrete thermal evaporation in a uniform work cycle, are suitable for use in low-voltage devices.  As a result of work are received p-n heterojunctions in thin-film execution, described by high values of differential resistance. Show that, thermo endurance - T0 maybe using as characteristic of thermo endurance of optic materials. If heating flow, destruction temperature and internal surface temperature is measured during test, it is possible to determine value T0 and other necessity characteristics. As a result of the taking test was lead to comparison evaluation of considered materials. Working range of heating flow and up level heating embark have been determined.

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