Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the 
n+−Si
 source/drain regions

Shoichi Sato; Masaaki Tanaka; Ryosho Nakane

doi:10.1103/physrevb.102.035305

Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+−Si source/drain regions

Physical Review B ◽

10.1103/physrevb.102.035305 ◽

2020 ◽

Vol 102 (3) ◽

Cited By ~ 1

Author(s):

Shoichi Sato ◽

Masaaki Tanaka ◽

Ryosho Nakane

Keyword(s):

Metal Oxide ◽

Spin Relaxation ◽

Field Effect ◽

Spin Transport ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel

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Si-based Spin Metal-Oxide-Semiconductor Field-Effect Transistors with an Inversion Channel

ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2019.8901832 ◽

2019 ◽

Author(s):

Ryosho Nakane ◽

Shoichi Sato ◽

Masaaki Tanaka

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel

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Self-aligned inversion-channel In0.75Ga0.25As metal–oxide–semiconductor field-effect-transistors using UHV-Al2O3/Ga2O3(Gd2O3) and ALD-Al2O3 as gate dielectrics

Solid-State Electronics ◽

10.1016/j.sse.2010.04.033 ◽

2010 ◽

Vol 54 (9) ◽

pp. 919-924 ◽

Cited By ~ 31

Author(s):

T.D. Lin ◽

H.C. Chiu ◽

P. Chang ◽

Y.H. Chang ◽

Y.D. Wu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel

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Publisher’s Note: “Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors” [Appl. Phys. Lett. 99, 072117 (2011)]

Applied Physics Letters ◽

10.1063/1.3665121 ◽

2011 ◽

Vol 99 (25) ◽

pp. 259901 ◽

Cited By ~ 6

Author(s):

A. Frazzetto ◽

F. Giannazzo ◽

P. Fiorenza ◽

V. Raineri ◽

F. Roccaforte

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Channel Mobility ◽

Inversion Channel

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Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3627186 ◽

2011 ◽

Vol 99 (7) ◽

pp. 072117 ◽

Cited By ~ 43

Author(s):

A. Frazzetto ◽

F. Giannazzo ◽

P. Fiorenza ◽

V. Raineri ◽

F. Roccaforte

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Channel Mobility ◽

Inversion Channel

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dc and rf characteristics of self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al2O3/Ga2O3(Gd2O3) as gate dielectrics

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3276442 ◽

2010 ◽

Vol 28 (3) ◽

pp. C3H14-C3H17 ◽

Cited By ~ 3

Author(s):

T. D. Lin ◽

P. Chang ◽

H. C. Chiu ◽

M. Hong ◽

J. Kwo ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Metal Oxide ◽

Field Effect ◽

Molecular Beam ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel

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Inversion-channel GaAs(100) metal-oxide-semiconductor field-effect-transistors using molecular beam deposited Al2O3 as a gate dielectric on different reconstructed surfaces

Applied Physics Letters ◽

10.1063/1.4793433 ◽

2013 ◽

Vol 102 (9) ◽

pp. 093506 ◽

Cited By ~ 19

Author(s):

C. Merckling

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Molecular Beam ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel ◽

Reconstructed Surfaces

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High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2

Applied Physics Letters ◽

10.1063/1.4852975 ◽

2013 ◽

Vol 103 (25) ◽

pp. 253509 ◽

Cited By ~ 21

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel

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Self-Aligned Inversion-Channel In$_{0.53}$Ga$_{0.47}$As Metal–Oxide–Semiconductor Field-Effect Transistors withIn-situDeposited Al$_{2}$O$_{3}$/Y$_{2}$O$_{3}$ as Gate Dielectrics

Applied Physics Express ◽

10.1143/apex.4.114202 ◽

2011 ◽

Vol 4 (11) ◽

pp. 114202 ◽

Cited By ~ 21

Author(s):

Pen Chang ◽

Han-Chin Chiu ◽

Tsung-Da Lin ◽

Mao-Lin Huang ◽

Wen-Hsin Chang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel

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Passivation of GaSb using molecular beam epitaxy Y2O3 to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors

Applied Physics Letters ◽

10.1063/1.4901100 ◽

2014 ◽

Vol 105 (18) ◽

pp. 182106 ◽

Cited By ~ 25

Author(s):

G. J. Brown

Keyword(s):

Molecular Beam Epitaxy ◽

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Molecular Beam ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Trap Density ◽

Oxide Semiconductor ◽

Inversion Channel

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Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Cited By ~ 3

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Cost Effective ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

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