scholarly journals Role of V-V dimerization in the insulator-metal transition and optical transmittance of pure and doped VO2 thin films

2020 ◽  
Vol 101 (1) ◽  
Author(s):  
S. S. Majid ◽  
S. R. Sahu ◽  
A. Ahad ◽  
K. Dey ◽  
K. Gautam ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Transmittance ◽  
Insulator Metal Transition ◽  
Vo2 Thin Films

scholarly journals The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO2 Thin Films and Their Insulator–Metal Transition Behavior

Materials ◽  
2019 ◽  
Vol 12 (13) ◽  
pp. 2160 ◽  
Author(s):  
Chunzi Zhang ◽  
Ozan Gunes ◽  
Yuanshi Li ◽  
Xiaoyu Cui ◽  
Masoud Mohammadtaheri ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Optical Transmittance ◽  
Dc Magnetron Sputtering ◽  
Structural And Optical Properties ◽  
Metal Insulator ◽  
Insulator Metal Transition ◽  
Vo2 Thin Films ◽  
Different Thickness

In this work, VO2 thin films were deposited on Si wafers (onto (100) surface) by DC magnetron sputtering under different cathode bias voltages. The effects of substrate biasing on the structural and optical properties were investigated. The results show that the metal–insulator transition (MIT) temperature of VO2 thin films can be increased up to 14 K by applying a cathode bias voltage, compared to deposition conditions without any bias. The decrease in the transition efficiency and increase in the transition temperature are attributed to the enlarged grain size, increased defects, and the residual stress in the VO2 thin films induced by biasing. The optical transmittance measurements for different thickness films indicate an attenuation coefficient of 3.1 × 107 m−1 at 2000 nm or an extinction coefficient of 4.9 in the metal phase. The optical transmittance vs wavelength characteristics point to an indirect bandgap of 0.6 ± 0.05 eV and significant scattering in the bulk and/or at the interface.

scholarly journals Role of microstructures on the M1-M2 phase transition in epitaxial VO2 thin films

2014 ◽  
Vol 4 (1) ◽  
Author(s):  
Yanda Ji ◽  
Yin Zhang ◽  
Min Gao ◽  
Zhen Yuan ◽  
Yudong Xia ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Vo2 Thin Films

scholarly journals Erratum: Zhang, C. et al., The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO2 Thin Films and Their Insulator–Metal Transition Behavior. Materials 2019, 12, 2160

Materials ◽  
2020 ◽  
Vol 13 (22) ◽  
pp. 5132
Author(s):  
Chunzi Zhang ◽  
Ozan Gunes ◽  
Yuanshi Li ◽  
Xiaoyu Cui ◽  
Masoud Mohammadtaheri ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Typographical Error ◽  
Dc Magnetron Sputtering ◽  
Transition Behavior ◽  
Insulator Metal Transition ◽  
Vo2 Thin Films

The authors would like to correct a typographical error in their paper [...]

Effect of a substrate-induced microstructure on the optical properties of the insulator-metal transition temperature in VO2 thin films

2013 ◽  
Vol 113 (23) ◽  
pp. 233104 ◽  
Author(s):  
E. Radue ◽  
E. Crisman ◽  
L. Wang ◽  
S. Kittiwatanakul ◽  
J. Lu ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Transition Temperature ◽  
Insulator Metal Transition ◽  
Vo2 Thin Films

The study of interfacial reactions of nickel thin films on GaAs

1983 ◽  
Vol 41 ◽  
pp. 156-157
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Interfacial Reactions ◽  
Metal Contacts ◽  
Nickel Thin Films ◽  
Thin Foils ◽  
The Status ◽  
Si Doped ◽  
Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

Transmission Electron Microscopy studies of texture of Cr underlayer of magnetic recording hard disk

1991 ◽  
Vol 49 ◽  
pp. 580-581
Author(s):  
L. Tang ◽  
G. Thomas ◽  
M. R. Khan ◽  
S. L. Duan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Magnetic Recording ◽  
Magnetic Thin Films ◽  
Magnetic Films ◽  
Substrate Bias ◽  
Epitaxial Relationship ◽  
Transmission Electron

Cr thin films are often used as underlayers for Co alloy magnetic thin films, such as Co1, CoNi2, and CoNiCr3, for high density longitudinal magnetic recording. It is belived that the role of the Cr underlayer is to control the growth and texture of the Co alloy magnetic thin films, and, then, to increase the in plane coercivity of the films. Although many epitaxial relationship between the Cr underlayer and the magnetic films, such as ﹛1010﹜Co/ {110﹜Cr4, ﹛2110﹜Co/ ﹛001﹜Cr5, ﹛0002﹜Co/﹛110﹜Cr6, have been suggested and appear to be related to the Cr thickness, the texture of the Cr underlayer itself is still not understood very well. In this study, the texture of a 2000 Å thick Cr underlayer on Nip/Al substrate for thin films of (Co75Ni25)1-xTix dc-sputtered with - 200 V substrate bias is investigated by electron microscopy.

Transmission Electron Microscopy of Evaporated Perylene Thin Films

1990 ◽  
Vol 48 (2) ◽  
pp. 336-337
Author(s):  
C. Ewins ◽  
J.R. Fryer
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Molecular Electronics ◽  
High Vacuum ◽  
Amorphous Layer ◽  
Electric Heater ◽  
Transmission Electron ◽  
Polycyclic Aromatic

The preparation of thin films of organic molecules is currently receiving much attention because of the need to produce good quality thin films for molecular electronics. We have produced thin films of the polycyclic aromatic, perylene C10H12 by evaporation under high vacuum onto a potassium chloride (KCl) substrate. The role of substrate temperature in determining the morphology and crystallography of the films was then investigated by transmission electron microscopy (TEM).The substrate studied was the (001) face of a freshly cleaved crystal of KCl. The temperature of the KCl was controlled by an electric heater or a cold finger. The KCl was heated to 200°C under a vacuum of 10-6 torr and allowed to cool to the desired temperature. The perylene was then evaporated over a period of one minute from a molybdenum boat at a distance of 10cm from the KCl. The perylene thin film was then backed with an amorphous layer of carbon and floated onto copper microscope grids.

scholarly journals The role of the substrate on the mechanical and thermal stability of Pd thin films during hydrogen (de)sorption

2021 ◽  
Vol 46 (5) ◽  
pp. 4137-4153
Author(s):  
Neha Verma ◽  
Rob Delhez ◽  
Niek M. van der Pers ◽  
Frans D. Tichelaar ◽  
Amarante J. Böttger
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Thermal Stability Of
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