scholarly journals Theory of Excitation Transfer between Two-Dimensional Semiconductor and Molecular Layers

2018 ◽  
Vol 9 (4) ◽  
Author(s):  
Judith F. Specht ◽  
Eike Verdenhalven ◽  
Björn Bieniek ◽  
Patrick Rinke ◽  
Andreas Knorr ◽  
...  
1989 ◽  
Vol 177 ◽  
Author(s):  
R. Geer ◽  
T. Stoebe ◽  
C. C. Huang ◽  
R. Pindak ◽  
J. Goodby

ABSTRACTA high-resolution differential quasi-adiabatic calorimeter has been developed to investigate the physical properties of freestanding liquid-crystal films. Our recent heat-capacity studies near the smectic-A-hexatic-B transition of both 65OBC and 46OBC freestanding films clearly demonstrate the evolution towards twodimensional limiting behavior in four-layer films. As the film thickness decreases towards four molecular layers, the heatcapacity anomalies first display separate peaks for the surface and interior transitions and then evolve to one dominated by the surface transition.


2005 ◽  
Vol 20 (5) ◽  
pp. 1107-1112 ◽  
Author(s):  
R.F. Frindt ◽  
D. Yang ◽  
P. Westreich

The layered compounds MnPS3 and CdPS3 were exfoliated to form single molecular layers of Mn0.8PS3 and Cd0.8PS3 in suspension in water by ion exchange. The x-ray diffraction patterns of the two single-layer suspensions showed profound differences in some of the Bragg peaks, and we demonstrated that the differences are not due to the quality or size of the single layers, but are caused by structure factor modulations of the Warren tail for two-dimensional systems. We also demonstrated that the Cd or Mn vacancies generated in the exfoliation process are not ordered at long range, in contrast to an earlier report of vacancy ordering on intercalated MnPS3.


1994 ◽  
Vol 332 ◽  
Author(s):  
Bruce A. Parkinson

ABSTRACTMethods for epitaxial growth of two dimensional materials are described. The lack of interlayer bonding in these materials allows for epitaxial growth with large lattice mismatches. Growth of MoSe2 on MoS2 (a 5% mismatch) or on SnS2 (10% mismatch) can be demonstrated. Scanning tunneling microscopy (STM) revealed remarkable structures in the epilayer as a result of the large mismatches. A technique using the STM or atomic force microscope (AFM) to selectively remove single molecular layers from the surface of layered materials is also described. The combination of these two technologies may result in the ability to produce nanoscale devices exhibiting quantum size effects.


JETP Letters ◽  
2017 ◽  
Vol 106 (10) ◽  
pp. 682-685 ◽  
Author(s):  
A. V. Gorbunov ◽  
L. V. Kulik ◽  
V. A. Kuznetsov ◽  
A. S. Zhuravlev ◽  
A. V. Larionov ◽  
...  

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