scholarly journals Vertical Hole Transport and Carrier Localization inInAs/InAs1−xSbxType-II Superlattice Heterojunction Bipolar Transistors

2017 ◽  
Vol 7 (2) ◽  
Author(s):  
B. V. Olson ◽  
J. F. Klem ◽  
E. A. Kadlec ◽  
J. K. Kim ◽  
M. D. Goldflam ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Hole Transport ◽  
Carrier Localization ◽  
Vertical Hole

Evidence for localization effects in GaAsSb/InP heterostructures from optical spectroscopy

2003 ◽  
Vol 799 ◽  
Author(s):  
Houssam Chouaib ◽  
Catherine Bru-Chevallier ◽  
Taha Benyattou ◽  
Hacene Lahreche ◽  
Philippe Bove
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
Careful Analysis ◽  
Bipolar Transistors ◽  
Excitation Density ◽  
Type I ◽  
Carrier Localization ◽  
Recombination Energy ◽  
Interface Quality ◽  
New Generation

ABSTRACTGaAsSb is a promising material for the base of a new generation of Heterojunction Bipolar Transistors (HBT) on InP, as it is expected to allow the elaboration of high-speed digital circuits (80 to 100 Gbits/s). Emitter-base interfaces between GaAsSb and InP need to be well controlled to ensure good performance of the HBT, and this requires a careful analysis of both material and interface quality. Photoluminescence (PL) experiments as a function of temperature and of power excitation density, as well as photoreflectance (PR) measurements are performed on GaAsSb/InP heterostructures in order to get information about ordering and segregation effects in antimonide alloys.From the PL recombination energy across the type II interface and at the GaAsSb band-edge, the band offset ΔEC between InP and GaAsSb is calculated. The evolution of the band to band PL recombination is studied as a function of temperature: the energy and intensity of the type I PL transition are shown to exhibit specific behaviors, which are typical of carrier localization effects in semiconductor alloys. At low temperature, the shape of the PR spectrum results in an atypical steplike background, which is analyzed as a band filling effect in consequence of the carrier localization on potential fluctuations.

TEM evaluation of graded SixGe1-x heterolayers

1991 ◽  
Vol 49 ◽  
pp. 894-895
Author(s):  
N. David Theodore ◽  
Mamoru Tomozane ◽  
Ming Liaw
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Gas Flow ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Dark Field ◽  
Bipolar Transistors ◽  
Structural Quality ◽  
Weak Beam ◽  
Transmission Electron ◽  
And Behavior

There is extensive interest in SiGe for use in heterojunction bipolar transistors. SiGe/Si superlattices are also of interest because of their potential for use in infrared detectors and field-effect transistors. The processing required for these materials is quite compatible with existing silicon technology. However, before SiGe can be used extensively for devices, there is a need to understand and then control the origin and behavior of defects in the materials. The present study was aimed at investigating the structural quality of, and the behavior of defects in, graded SiGe layers grown by chemical vapor deposition (CVD).The structures investigated in this study consisted of Si1-xGex[x=0.16]/Si1-xGex[x= 0.14, 0.13, 0.12, 0.10, 0.09, 0.07, 0.05, 0.04, 0.005, 0]/epi-Si/substrate heterolayers grown by CVD. The Si1-xGex layers were isochronally grown [t = 0.4 minutes per layer], with gas-flow rates being adjusted to control composition. Cross-section TEM specimens were prepared in the 110 geometry. These were then analyzed using two-beam bright-field, dark-field and weak-beam images. A JEOL JEM 200CX transmission electron microscope was used, operating at 200 kV.

TEM study of phosphorus-implanted pseudomorphic Si0.88Ge0.12 on Si(100)

1995 ◽  
Vol 53 ◽  
pp. 468-469
Author(s):  
N. David Theodore ◽  
Donald Y.C Lie ◽  
J. H. Song ◽  
Peter Crozier
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
High Speed ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Bipolar Transistors ◽  
Sige Hbt ◽  
Integrated Circuit Manufacturing ◽  
Microstructural Behavior

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.

(GaAl)As/GaAs heterojunction bipolar transistors with graded composition in the base

1983 ◽  
Vol 19 (10) ◽  
pp. 367 ◽  
Author(s):  
D.L. Miller ◽  
P.M. Asbeck ◽  
R.J. Anderson ◽  
F.H. Eisen
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors

17 Gbit/s pin-PD/decision circuit using InP/InGaAs double-heterojunction bipolar transistors

1996 ◽  
Vol 32 (4) ◽  
pp. 393 ◽  
Author(s):  
M. Yoneyama ◽  
E. Sano ◽  
S. Yamahata ◽  
Y. Matsuoka ◽  
M. Yaita
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Double Heterojunction ◽  
Decision Circuit

InAs-based heterojunction bipolar transistors

2002 ◽  
Vol 38 (7) ◽  
pp. 344 ◽  
Author(s):  
S. Maimon ◽  
K.L. Averett ◽  
X. Wu ◽  
M.W. Koch ◽  
G.W. Wicks
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors

Excess noise in AlGaAs/GaAs heterojunction bipolar transistors and associated TLM test structures

1994 ◽  
Vol 41 (11) ◽  
pp. 2000-2005 ◽  
Author(s):  
C. Delseny ◽  
F. Pascal ◽  
S. Jarrix ◽  
G. Lecoy ◽  
J. Dangla ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Excess Noise
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