scholarly journals Radio-Frequency Reflectometry in Silicon-Based Quantum Dots

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Y.-Y. Liu ◽  
S.G.J. Philips ◽  
L.A. Orona ◽  
N. Samkharadze ◽  
T. McJunkin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Radio Frequency ◽  
Silicon Based

scholarly journals Radio-frequency stress-induced modulation of CdTe/ZnTe quantum dots

2020 ◽  
Vol 127 (23) ◽  
pp. 234303
Author(s):  
V. Tiwari ◽  
K. Makita ◽  
M. Arino ◽  
M. Morita ◽  
T. Crozes ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Radio Frequency

RF-MBE Growth of InN Dots on N-polar GaN Grown on Vicinal c-plane Sapphire

2004 ◽  
Vol 831 ◽  
Author(s):  
Naoki Hashimoto ◽  
Naohiro Kikukawa ◽  
Song-Bek Che ◽  
Yoshihiro Ishitani ◽  
Akihiko Yoshikawa
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Growth Mechanism ◽  
Molecular Beam ◽  
Lattice Relaxation ◽  
Radio Frequency Plasma ◽  
Mbe Growth ◽  
Frequency Plasma ◽  
Nominal Coverage

ABSTRACTWe have grown InN quantum dots (QDs) on nitrogen-polarity (N-polarity) GaN under-layer by the radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE), and systematically investigated growth mechanism of the InN dots. The InN QDs with the N-polarity could be grown at about 500°C, which was much higher than that of previous reports on InN dots grown by MBE. When the nominal coverage of InN became more than 1 mono-layer (ML), lattice relaxation of InN occurred and high density InN dots were uniformly formed. These results indicated that InN dots were formed by Stranski-Krastanov (S-K) growth mode. For the InN deposition above about 8ML, InN dots tended to coalesce and resulted in remarakable decrease of the dots density.

Impact of silicon-based quantum dots on the antioxidative system in white muscle of Carassius auratus gibelio

2011 ◽  
Vol 38 (4) ◽  
pp. 963-975 ◽  
Author(s):  
Loredana Stanca ◽  
Sorina Nicoleta Petrache ◽  
Mihaela Radu ◽  
Andreea Iren Serban ◽  
Maria Cristina Munteanu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Carassius Auratus ◽  
White Muscle ◽  
Antioxidative System ◽  
Carassius Auratus Gibelio ◽  
Silicon Based

scholarly journals Silicon-based current-injected light emitting diodes with Ge self-assembled quantum dots embedded in photonic crystal nanocavities

2012 ◽  
Vol 20 (13) ◽  
pp. 14714 ◽  
Author(s):  
Xuejun Xu ◽  
Toshiki Tsuboi ◽  
Taichi Chiba ◽  
Noritaka Usami ◽  
Takuya Maruizumi ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Photonic Crystal ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Self Assembled ◽  
Silicon Based

Quantum dots-templated growth of strain-relaxed GaN on a c -plane sapphire by radio-frequency molecular beam epitaxy

2012 ◽  
Vol 21 (10) ◽  
pp. 108101 ◽  
Author(s):  
Hao-Min Guo ◽  
Long Wen ◽  
Zhi-Fei Zhao ◽  
Shao-Jiang Bu ◽  
Xin-Hua Li ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Molecular Beam ◽  
Templated Growth

scholarly journals 4.2 K sensitivity-tunable radio frequency reflectometry of a physically defined p-channel silicon quantum dot

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Sinan Bugu ◽  
Shimpei Nishiyama ◽  
Kimihiko Kato ◽  
Yongxun Liu ◽  
Shigenori Murakami ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Radio Frequency ◽  
Liquid Helium ◽  
Signal To Noise Ratio ◽  
Matching Condition ◽  
Silicon On Insulator ◽  
Signal To Noise ◽  
Silicon Quantum Dot ◽  
Optimal Signal

AbstractWe demonstrate the measurement of p-channel silicon-on-insulator quantum dots at liquid helium temperatures by using a radio frequency (rf) reflectometry circuit comprising of two independently tunable GaAs varactors. This arrangement allows observing Coulomb diamonds at 4.2 K under nearly best matching condition and optimal signal-to-noise ratio. We also discuss the rf leakage induced by the presence of the large top gate in MOS nanostructures and its consequence on the efficiency of rf-reflectometry. These results open the way to fast and sensitive readout in multi-gate architectures, including multi qubit platforms.

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