scholarly journals Radio-frequency stress-induced modulation of CdTe/ZnTe quantum dots

2020 ◽  
Vol 127 (23) ◽  
pp. 234303
Author(s):  
V. Tiwari ◽  
K. Makita ◽  
M. Arino ◽  
M. Morita ◽  
T. Crozes ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Radio Frequency

RF-MBE Growth of InN Dots on N-polar GaN Grown on Vicinal c-plane Sapphire

2004 ◽  
Vol 831 ◽  
Author(s):  
Naoki Hashimoto ◽  
Naohiro Kikukawa ◽  
Song-Bek Che ◽  
Yoshihiro Ishitani ◽  
Akihiko Yoshikawa
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Growth Mechanism ◽  
Molecular Beam ◽  
Lattice Relaxation ◽  
Radio Frequency Plasma ◽  
Mbe Growth ◽  
Frequency Plasma ◽  
Nominal Coverage

ABSTRACTWe have grown InN quantum dots (QDs) on nitrogen-polarity (N-polarity) GaN under-layer by the radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE), and systematically investigated growth mechanism of the InN dots. The InN QDs with the N-polarity could be grown at about 500°C, which was much higher than that of previous reports on InN dots grown by MBE. When the nominal coverage of InN became more than 1 mono-layer (ML), lattice relaxation of InN occurred and high density InN dots were uniformly formed. These results indicated that InN dots were formed by Stranski-Krastanov (S-K) growth mode. For the InN deposition above about 8ML, InN dots tended to coalesce and resulted in remarakable decrease of the dots density.

Quantum dots-templated growth of strain-relaxed GaN on a c -plane sapphire by radio-frequency molecular beam epitaxy

2012 ◽  
Vol 21 (10) ◽  
pp. 108101 ◽  
Author(s):  
Hao-Min Guo ◽  
Long Wen ◽  
Zhi-Fei Zhao ◽  
Shao-Jiang Bu ◽  
Xin-Hua Li ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Molecular Beam ◽  
Templated Growth

scholarly journals 4.2 K sensitivity-tunable radio frequency reflectometry of a physically defined p-channel silicon quantum dot

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Sinan Bugu ◽  
Shimpei Nishiyama ◽  
Kimihiko Kato ◽  
Yongxun Liu ◽  
Shigenori Murakami ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Radio Frequency ◽  
Liquid Helium ◽  
Signal To Noise Ratio ◽  
Matching Condition ◽  
Silicon On Insulator ◽  
Signal To Noise ◽  
Silicon Quantum Dot ◽  
Optimal Signal

AbstractWe demonstrate the measurement of p-channel silicon-on-insulator quantum dots at liquid helium temperatures by using a radio frequency (rf) reflectometry circuit comprising of two independently tunable GaAs varactors. This arrangement allows observing Coulomb diamonds at 4.2 K under nearly best matching condition and optimal signal-to-noise ratio. We also discuss the rf leakage induced by the presence of the large top gate in MOS nanostructures and its consequence on the efficiency of rf-reflectometry. These results open the way to fast and sensitive readout in multi-gate architectures, including multi qubit platforms.

scholarly journals Radio-Frequency-Detected Fast Charge Sensing in Undoped Silicon Quantum Dots

Nano Letters ◽  
2020 ◽  
Vol 20 (2) ◽  
pp. 947-952 ◽  
Author(s):  
Akito Noiri ◽  
Kenta Takeda ◽  
Jun Yoneda ◽  
Takashi Nakajima ◽  
Tetsuo Kodera ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Radio Frequency ◽  
Silicon Quantum Dots ◽  
Charge Sensing ◽  
Fast Charge

scholarly journals Direct Measurement of Hyperfine Shifts and Radio Frequency Manipulation of Nuclear Spins in Individual CdTe/ZnTe Quantum Dots

2019 ◽  
Vol 122 (9) ◽  
Author(s):  
G. Ragunathan ◽  
J. Kobak ◽  
G. Gillard ◽  
W. Pacuski ◽  
K. Sobczak ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Radio Frequency ◽  
Direct Measurement ◽  
Nuclear Spins

scholarly journals Radio frequency pulsed-gate charge spectroscopy on coupled quantum dots

2010 ◽  
Vol 82 (19) ◽  
Author(s):  
D. Harbusch ◽  
S. Manus ◽  
H. P. Tranitz ◽  
W. Wegscheider ◽  
S. Ludwig
Keyword(s):  
Quantum Dots ◽  
Radio Frequency ◽  
Coupled Quantum Dots ◽  
Gate Charge

scholarly journals Radio-frequency single electron transistors in physically defined silicon quantum dots with a sensitive phase response

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Raisei Mizokuchi ◽  
Sinan Bugu ◽  
Masaru Hirayama ◽  
Jun Yoneda ◽  
Tetsuo Kodera
Keyword(s):  
Quantum Dots ◽  
Radio Frequency ◽  
Impedance Matching ◽  
Electrical Circuit ◽  
Phase Response ◽  
Silicon On Insulator ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Large Phase ◽  
Electron Transistors

AbstractRadio-frequency reflectometry techniques are instrumental for spin qubit readout in semiconductor quantum dots. However, a large phase response is difficult to achieve in practice. In this work, we report radio-frequency single electron transistors using physically defined quantum dots in silicon-on-insulator. We study quantum dots which do not have the top gate structure considered to hinder radio frequency reflectometry measurements using physically defined quantum dots. Based on the model which properly takes into account the parasitic components, we precisely determine the gate-dependent device admittance. Clear Coulomb peaks are observed in the amplitude and the phase of the reflection coefficient, with a remarkably large phase signal of ∼45°. Electrical circuit analysis indicates that it can be attributed to a good impedance matching and a detuning from the resonance frequency. We anticipate that our results will be useful in designing and simulating reflectometry circuits to optimize qubit readout sensitivity and speed.

scholarly journals Radio-Frequency Reflectometry in Silicon-Based Quantum Dots

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Y.-Y. Liu ◽  
S.G.J. Philips ◽  
L.A. Orona ◽  
N. Samkharadze ◽  
T. McJunkin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Radio Frequency ◽  
Silicon Based
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