Optical and Electronic Properties of Symmetric InAs/(In,Al,Ga)As/InP Quantum Dots Formed by Ripening in Molecular Beam Epitaxy: A Potential System for Broad-Range Single-Photon Telecom Emitters

2020 ◽  
Vol 14 (6) ◽  
Author(s):  
P. Holewa ◽  
M. Gawełczyk ◽  
A. Maryński ◽  
P. Wyborski ◽  
J.P. Reithmaier ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Electronic Properties ◽  
Molecular Beam ◽  
Single Photon ◽  
Potential System ◽  
Optical And Electronic Properties ◽  
Inp Quantum Dots

A detailed study of self-assembled (Al,Ga)InP quantum dots grown by molecular beam epitaxy

2014 ◽  
Vol 211 (11) ◽  
pp. 2601-2610
Author(s):  
Vasilij Baumann ◽  
Reinhold Rödel ◽  
Matthias Heidemann ◽  
Christian Schneider ◽  
Martin Kamp ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Self Assembled ◽  
Inp Quantum Dots

scholarly journals Structural, optical and electronic properties of homoepitaxial GaN nanowalls grown on GaN template by laser molecular beam epitaxy

RSC Advances ◽  
2015 ◽  
Vol 5 (107) ◽  
pp. 87818-87830 ◽  
Author(s):  
S. S. Kushvaha ◽  
M. Senthil Kumar ◽  
A. K. Shukla ◽  
B. S. Yadav ◽  
Dilip K. Singh ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electronic Properties ◽  
Molecular Beam ◽  
High Vacuum ◽  
Nitrogen Plasma ◽  
Ultra High Vacuum ◽  
Laser Molecular Beam Epitaxy ◽  
Molecular Beam Epitaxy System ◽  
Optical And Electronic Properties

We have grown homoepitaxial GaN nanowall networks on GaN template using an ultra-high vacuum laser assisted molecular beam epitaxy system by ablating solid GaN target under a constant r.f. nitrogen plasma ambient.

scholarly journals Однофотонное излучение квантовых точек InAs/AlGaAs

2018 ◽  
Vol 60 (4) ◽  
pp. 687
Author(s):  
М.В. Рахлин ◽  
К.Г. Беляев ◽  
Г.В. Климко ◽  
И.С. Мухин ◽  
С.В. Иванов ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Correlation Function ◽  
Molecular Beam Epitaxy ◽  
Spectral Range ◽  
Molecular Beam ◽  
Single Photon ◽  
Second Order ◽  
Wide Spectral Range ◽  
Radiative Characteristics

AbstractThe results of investigation of the radiative characteristics of heterostructures with InAs/AlGaAs quantum dots (QDs) grown by molecular beam epitaxy have been presented. The properties of single QDs were determined by spectroscopy of micro-photoluminescence in cylindrical mesa-structures with a diameter of 200–1000 nm or columnar microresonators with distributed Bragg mirrors. The single-photon nature of the radiation is confirmed by measurements and analysis of the second-order correlation function g ^2(τ) in a wide spectral range from 630 to 730 nm.

Heterostructures with CdTe/ZnTe quantum dots for single photon emitters grown by molecular beam epitaxy

2016 ◽  
Vol 42 (12) ◽  
pp. 1163-1166 ◽  
Author(s):  
S. V. Sorokin ◽  
I. V. Sedova ◽  
S. V. Gronin ◽  
K. G. Belyaev ◽  
M. V. Rakhlin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Photon ◽  
Single Photon Emitters

scholarly journals Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy

Materials ◽  
2021 ◽  
Vol 14 (21) ◽  
pp. 6270
Author(s):  
Tristan Smołka ◽  
Katarzyna Posmyk ◽  
Maja Wasiluk ◽  
Paweł Wyborski ◽  
Michał Gawełczyk ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Internal Quantum Efficiency ◽  
Radiative Lifetime ◽  
Optical Quality ◽  
Structural Quality ◽  
Emission Quenching ◽  
Inp Quantum Dots

We present an experimental study on the optical quality of InAs/InP quantum dots (QDs). Investigated structures have application relevance due to emission in the 3rd telecommunication window. The nanostructures are grown by ripening-assisted molecular beam epitaxy. This leads to their unique properties, i.e., low spatial density and in-plane shape symmetry. These are advantageous for non-classical light generation for quantum technologies applications. As a measure of the internal quantum efficiency, the discrepancy between calculated and experimentally determined photon extraction efficiency is used. The investigated nanostructures exhibit close to ideal emission efficiency proving their high structural quality. The thermal stability of emission is investigated by means of microphotoluminescence. This allows to determine the maximal operation temperature of the device and reveal the main emission quenching channels. Emission quenching is predominantly caused by the transition of holes and electrons to higher QD’s levels. Additionally, these carriers could further leave the confinement potential via the dense ladder of QD states. Single QD emission is observed up to temperatures of about 100 K, comparable to the best results obtained for epitaxial QDs in this spectral range. The fundamental limit for the emission rate is the excitation radiative lifetime, which spreads from below 0.5 to almost 1.9 ns (GHz operation) without any clear spectral dispersion. Furthermore, carrier dynamics is also determined using time-correlated single-photon counting.

Nanoheterostructures with CdTe/ZnMgSeTe Quantum Dots for Single-Photon Emitters Grown by Molecular Beam Epitaxy

2018 ◽  
Vol 44 (3) ◽  
pp. 267-270 ◽  
Author(s):  
S. V. Sorokin ◽  
I. V. Sedova ◽  
K. G. Belyaev ◽  
M. V. Rakhlin ◽  
M. A. Yagovkina ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Photon ◽  
Single Photon Emitters

Molecular beam epitaxy control of the structural, optical, and electronic properties of ScN(001)

2001 ◽  
Vol 90 (4) ◽  
pp. 1809-1816 ◽  
Author(s):  
Arthur R. Smith ◽  
Hamad A. H. AL-Brithen ◽  
David C. Ingram ◽  
Daniel Gall
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electronic Properties ◽  
Molecular Beam ◽  
Optical And Electronic Properties
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