Sub-5-nm Monolayer Silicane Transistor: A First-Principles Quantum Transport Simulation

2020 ◽  
Vol 14 (2) ◽  
Author(s):  
Yuanyuan Pan ◽  
Jingrou Dai ◽  
Lin Xu ◽  
Jie Yang ◽  
Xiuying Zhang ◽  
...  
Keyword(s):  
Quantum Transport ◽  
First Principles ◽  
Transport Simulation

scholarly journals First-principles quantum transport simulation of CuPc on Au(111) and Ag(111)

2019 ◽  
Vol 99 (4) ◽  
Author(s):  
M. Rumetshofer ◽  
D. Bauernfeind ◽  
E. Arrigoni ◽  
W. von der Linden
Keyword(s):  
Quantum Transport ◽  
First Principles ◽  
Transport Simulation

scholarly journals First-Principles Quantum Transport Modeling of Spin-Transfer and Spin-Orbit Torques in Magnetic Multilayers

2018 ◽  
pp. 1-35 ◽  
Author(s):  
Branislav K. Nikolić ◽  
Kapildeb Dolui ◽  
Marko D. Petrović ◽  
Petr Plecháč ◽  
Troels Markussen ◽  
...  
Keyword(s):  
Quantum Transport ◽  
First Principles ◽  
Magnetic Multilayers ◽  
Spin Transfer ◽  
Transport Modeling ◽  
Spin Orbit

scholarly journals Quantum Transport Simulation of III-V TFETs with Reduced-Order $$ \varvec{k} \cdot \varvec{p} $$ k · p Method

2016 ◽  
pp. 151-180 ◽  
Author(s):  
Jun Z. Huang ◽  
Lining Zhang ◽  
Pengyu Long ◽  
Michael Povolotskyi ◽  
Gerhard Klimeck
Keyword(s):  
Quantum Transport ◽  
Reduced Order ◽  
Transport Simulation

scholarly journals Random Dopant-Induced Variability in Si-InAs Nanowire Tunnel FETs: A Quantum Transport Simulation Study

2018 ◽  
Vol 39 (9) ◽  
pp. 1473-1476 ◽  
Author(s):  
Hamilton Carrillo-Nunez ◽  
Jaehyun Lee ◽  
Salim Berrada ◽  
Cristina Medina-Bailon ◽  
Fikru Adamu-Lema ◽  
...  
Keyword(s):  
Quantum Transport ◽  
Simulation Study ◽  
Transport Simulation ◽  
Tunnel Fets ◽  
Random Dopant

Influence of the interface structure and strain on the rectification performance of lateral MoS2/graphene heterostructure devices

2022 ◽  
Author(s):  
Shun Song ◽  
Jian Gong ◽  
Xiangwei Jiang ◽  
Shenyuan Yang
Keyword(s):  
Transport Properties ◽  
Quantum Transport ◽  
First Principles ◽  
Interface Structure ◽  
First Principles Calculations ◽  
Heterostructure Devices

We systematically study the influence of interface configuration and strain on the electronic and transport properties of lateral MoS2/graphene heterostructures by first-principles calculations and quantum transport simulations.

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