scholarly journals High-Frequency Mechanical Excitation of a Silicon Nanostring with Piezoelectric Aluminum Nitride Layers

2020 ◽  
Vol 14 (1) ◽  
Author(s):  
Alessandro Pitanti ◽  
Tapani Makkonen ◽  
Martin F. Colombano ◽  
Simone Zanotto ◽  
Leonardo Vicarelli ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
High Frequency ◽  
Mechanical Excitation ◽  
Nitride Layers

Piezoelectric Coefficients of Aluminum Nitride and Gallium Nitride

1999 ◽  
Vol 572 ◽  
Author(s):  
C. M. Lueng ◽  
H. L. W. Chan ◽  
W. K. Fong ◽  
C. Surya ◽  
C. L. Choy
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Aluminum Nitride ◽  
Composite Film ◽  
High Frequency ◽  
Molecular Beam ◽  
Silicon Substrates ◽  
Heterodyne Interferometer

ABSTRACTAluminum nitride (AlN) and gallium nitride (GaN) thin films have potential uses in high temperature, high frequency (e.g. microwave) acoustic devices. In this work, the piezoelectric coefficients of wurtzite AlN and GaN/AlN composite film grown on silicon substrates by molecular beam epitaxy were measured by a Mach-Zehnder type heterodyne interferometer. The effects of the substrate on the measured coefficients are discussed.

Super High Frequency Aluminum Nitride Two-Dimensional-Mode Resonators With $k_{t}^{2}$ Exceeding 4.9%

2017 ◽  
Vol 27 (2) ◽  
pp. 105-107 ◽  
Author(s):  
Cristian Cassella ◽  
Nicolo Oliva ◽  
Jeffrey Soon ◽  
Merugu Srinivas ◽  
Navab Singh ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
High Frequency ◽  
Two Dimensional ◽  
Super High Frequency

scholarly journals Low-thickness high-quality aluminum nitride films for super high frequency solidly mounted resonators

2012 ◽  
Vol 520 (7) ◽  
pp. 3060-3063 ◽  
Author(s):  
E. Iborra ◽  
M. Clement ◽  
J. Capilla ◽  
J. Olivares ◽  
V. Felmetsger
Keyword(s):  
Aluminum Nitride ◽  
High Frequency ◽  
High Quality ◽  
Super High Frequency

Aluminum nitride thin films for high frequency applications

1999 ◽  
Vol 224 (1) ◽  
pp. 243-250 ◽  
Author(s):  
Marc-Alexandre Dubois ◽  
Paul Muralt ◽  
Laurent Sagalowicz
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
High Frequency

Formation and High Frequency CV-Measurements of Aluminum / Aluminum Nitride / 6H Silicon Carbide Structures

1996 ◽  
Vol 423 ◽  
Author(s):  
C. -M. Zetterling ◽  
K. Wongchotigul ◽  
M. G. Spencer ◽  
C. I. Harris ◽  
S. S. Wong ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Aluminum Nitride ◽  
High Frequency ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Relative Dielectric Constant ◽  
Thickness Measurement ◽  
Organic Chemical ◽  
Hydrogen Carrier

AbstractUndoped single crystalline aluminum nitride films were grown by metal organic chemical vapor deposition (MOCVD) at 1200 °C. The precursors used were trimethylaluminium (TMA) and ammonia (NH3) in a hydrogen carrier flow, at a pressure of 10 Torr. Silicon carbide substrates of the 4H or the 6H polytype with an epilayer on the silicon face, were used to grow the 200 nm thick A1N films. Aluminum was evaporated and subsequently patterned to form MIS capacitors for high frequency (400 kHz) capacitance voltage measurements at room temperature. It was possible to measure the structure and characterize accumulation, depletion and deep depletion. However, it was not possible to invert the low doped SiC epilayer at room temperature. From an independent optical thickness measurement the relative dielectric constant of aluminum nitride was calculated to be 8.4. The films were stressed up to 50 Volts (2.5 MV/cm) without breakdown or excessive leakage currents. These results indicate the possibility to replace silicon dioxide with aluminum nitride in SiC field effect transistors.

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