scholarly journals Broken Symmetry Effects due to Polarization on Resonant Tunneling Transport in Double-Barrier Nitride Heterostructures

2019 ◽  
Vol 11 (3) ◽  
Author(s):  
Jimy Encomendero ◽  
Vladimir Protasenko ◽  
Berardi Sensale-Rodriguez ◽  
Patrick Fay ◽  
Farhan Rana ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Broken Symmetry ◽  
Double Barrier ◽  
Tunneling Transport

SEQUENTIAL VERSUS COHERENT TUNNELING MECHANISMS DISTINGUISHED IN I-V CHARACTERISTICS

1992 ◽  
Vol 06 (28) ◽  
pp. 1811-1817
Author(s):  
L.Y. CHEN ◽  
C.S. TING
Keyword(s):  
Resonant Tunneling ◽  
Tunneling Current ◽  
Resonance Region ◽  
Double Barrier ◽  
Scattering Rate ◽  
Region I ◽  
Double Barrier Resonant Tunneling ◽  
Resonant Tunneling Structure ◽  
Coherent Tunneling ◽  
Tunneling Transport

The I–V characteristics of a 3D double-barrier resonant-tunneling structure is investigated to demonstrate the differences between coherent and sequential tunneling mechanisms. Increasing the ratio of phase-breaking scattering rate over tunneling broadening width from 0 to ∞, tunneling transport goes from the coherent to the sequential limit. In the first resonance region, I–V curve does not distinguish these two processes. In the second and higher resonance regimes, however, sequential tunneling current becomes appreciably larger than its coherent counterpart.

Resonant tunneling transport across YBa2Cu3O7–SrRuO3 interfaces

1995 ◽  
Vol 67 (12) ◽  
pp. 1775-1777 ◽  
Author(s):  
Regina Dömel ◽  
C. Horstmann ◽  
M. Siegel ◽  
A. I. Braginski ◽  
M. Yu. Kupriyanov
Keyword(s):  
Resonant Tunneling ◽  
Tunneling Transport

Resonant Tunneling Transport in Polar III-Nitride Heterostructures

2019 ◽  
pp. 215-247 ◽  
Author(s):  
Jimy Encomendero ◽  
Debdeep Jena ◽  
Huili Grace Xing
Keyword(s):  
Resonant Tunneling ◽  
Tunneling Transport

Simulation of GaAs/AlxGa1-xAs/InyGa1-y As Double-Barrier Resonant Tunneling Structures

2011 ◽  
Vol 399-401 ◽  
pp. 1093-1096
Author(s):  
Yuan Ming Zhou
Keyword(s):  
Transmission Coefficient ◽  
Current Density ◽  
Resonant Tunneling ◽  
Indium Content ◽  
Rapid Decrease ◽  
Supply Function ◽  
Double Barrier ◽  
Resonant Condition ◽  
Zero Bias ◽  
Double Barrier Resonant Tunneling

We study the resonant tunneling in symmetric GaAs/AlxGa1-xAs/InyGa1-yAs double-barrier resonant-tunneling structures. Effects of three factors on the resonant tunneling are simulated and discussed. On increasing the barrier height, the decrease of current density is attributed to the interplay between the increase of the supply function of available electrons and the rapid decrease of the transmission coefficient through the device area, and the lowest Indium content for realizing the zero-bias resonant tunneling increases. With the increase of the barrier (well) width, the decrease of the current density can be explained by the fact that both the supply function and the transmission coefficient decreases, and the lowest Indium content meeting the zero-bias resonant condition decreases.

Sign in / Sign up

Export Citation Format

Share Document