Negative-Differential-Resistance Devices Achieved by Band-Structure Engineering in Silicene under Periodic Potentials

2018 ◽  
Vol 10 (4) ◽  
Author(s):  
Chang-Hung Chen ◽  
Wen-Wu Li ◽  
Yuan-Ming Chang ◽  
Che-Yi Lin ◽  
Shih-Hsien Yang ◽  
...  
Keyword(s):  
Band Structure ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Periodic Potentials ◽  
Structure Engineering

scholarly journals Negative differential resistance and spin filter effects in VS2 monolayers

RSC Advances ◽  
2017 ◽  
Vol 7 (54) ◽  
pp. 33733-33736
Author(s):  
G. W. Peng ◽  
L. Zhu ◽  
K. L. Yao
Keyword(s):  
Band Structure ◽  
First Principles ◽  
Negative Differential Resistance ◽  
Function Method ◽  
Spin Current ◽  
Differential Resistance ◽  
First Principles Calculations ◽  
Spin Filter ◽  
Non Equilibrium Green’S Function ◽  
Filter Effects

We have calculated the spin current based on the bias voltage, band structure and transmission spectrum for VS2 monolayers along the zigzag and armchair orientations by first-principles calculations combined with the non-equilibrium Green's function method.

Compositional Tuning of Negative Differential Resistance in Bulk Silver Iodide Memristor

2020 ◽  
Author(s):  
SMITA GAJANAN NAIK ◽  
Mohammad Hussain Kasim Rabinal
Keyword(s):  
Power Consumption ◽  
Negative Differential Resistance ◽  
Silver Iodide ◽  
Differential Resistance ◽  
Fast Response ◽  
Low Power Consumption ◽  
Switching Effect ◽  
Memory Switching ◽  
Bulk Silver ◽  
Emerging Memory

Electrical memory switching effect has received a great interest to develop emerging memory technology such as memristors. The high density, fast response, multi-bit storage and low power consumption are their...

Experimental Studies of New GaAs Metal/Insulator/p-n+Switches Using Low Temperature Oxide

2002 ◽  
Vol 25 (3) ◽  
pp. 233-237
Author(s):  
K. F. Yarn
Keyword(s):  
Low Temperature ◽  
Negative Differential Resistance ◽  
Doping Concentration ◽  
Experimental Studies ◽  
Differential Resistance ◽  
Switching Behavior ◽  
Metal Insulator ◽  
Turn On ◽  
Temperature Oxide ◽  
Phase Chemical

First observation of switching behavior is reported in GaAs metal-insulator-p-n+structure, where the thin insulator is grown at low temperature by a liquid phase chemical-enhanced oxide (LPECO) with a thickness of 100 Å. A significant S-shaped negative differential resistance (NDR) is shown to occur that originates from the regenerative feedback in a tunnel metal/insulator/semiconductor (MIS) interface andp-n+junction. The influence of epitaxial doping concentration on the switching and holding voltages is investigated. The switching voltages are found to be decreased when increasing the epitaxial doping concentration, while the holding voltages are almost kept constant. A high turn-off/turn-on resistance ratio up to105has been obtained.

Band structure engineering of van der Waals heterostructures using ferroelectric clamped sandwich structures

2021 ◽  
Vol 103 (12) ◽  
Author(s):  
Hao Tian ◽  
Changsong Xu ◽  
Xu Li ◽  
Yurong Yang ◽  
L. Bellaiche ◽  
...  
Keyword(s):  
Band Structure ◽  
Sandwich Structures ◽  
Van Der Waals ◽  
Van Der Waals Heterostructures ◽  
Structure Engineering

scholarly journals Atomic chain of carbon atoms: Smallest negative differential resistance device

2021 ◽  
Vol 1797 (1) ◽  
pp. 012047
Author(s):  
Rinki Bhowmick ◽  
Mausumi Chattopadhyaya ◽  
Jit Chakraborty ◽  
Swarnendu Maity ◽  
Arnab Basu ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Atomic Chain
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