Magnetic Proximity Effect and Anomalous Hall Effect in Pt/Y3Fe5−xAlxO12 Heterostructures

2018 ◽  
Vol 10 (2) ◽  
Author(s):  
Xiao Liang ◽  
Guoyi Shi ◽  
Longjiang Deng ◽  
Fei Huang ◽  
Jun Qin ◽  
...  
2020 ◽  
Vol 13 (6) ◽  
pp. 063004
Author(s):  
Shoto Nodo ◽  
Shimpei Ono ◽  
Takashi Yanase ◽  
Toshihiro Shimada ◽  
Taro Nagahama

SPIN ◽  
2017 ◽  
Vol 07 (01) ◽  
pp. 1740005 ◽  
Author(s):  
O. d’Allivy Kelly ◽  
M. Collet ◽  
E. Jacquet ◽  
R. Mattana ◽  
F. Petroff ◽  
...  

Magnetic Proximity Effect (MPE) at the interface of Y3Fe5O[Formula: see text] (YIG)[Formula: see text]Pd is investigated using X-ray Magnetic Circular Dichroism (XMCD) at the Pd-edges. No evidence of MPE is found even for Pd film thicknesses down to 0.5[Formula: see text]nm. The same bilayers have been thereafter used for inverse spin Hall Effect (ISHE) measurements using the spin-pumping technique. A large signal can be observed at the ferromagnetic resonance. The angular dependence of the Pd dc resistance has been measured as a function of the YIG magnetization direction. It shows the expected dependences for the spin Hall magnetoresistance (SMR). Our methodology allows to state that ISHE and SMR are intrinsic phenomena whose underlying physics is uncorrelated to MPE.


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Fei Wang ◽  
Xuepeng Wang ◽  
Yi-Fan Zhao ◽  
Di Xiao ◽  
Ling-Jie Zhou ◽  
...  

AbstractThe Berry phase picture provides important insights into the electronic properties of condensed matter systems. The intrinsic anomalous Hall (AH) effect can be understood as the consequence of non-zero Berry curvature in momentum space. Here, we fabricate TI/magnetic TI heterostructures and find that the sign of the AH effect in the magnetic TI layer can be changed from being positive to negative with increasing the thickness of the top TI layer. Our first-principles calculations show that the built-in electric fields at the TI/magnetic TI interface influence the band structure of the magnetic TI layer, and thus lead to a reconstruction of the Berry curvature in the heterostructure samples. Based on the interface-induced AH effect with a negative sign in TI/V-doped TI bilayer structures, we create an artificial “topological Hall effect”-like feature in the Hall trace of the V-doped TI/TI/Cr-doped TI sandwich heterostructures. Our study provides a new route to create the Berry curvature change in magnetic topological materials that may lead to potential technological applications.


2021 ◽  
pp. 2006301
Author(s):  
Satya N. Guin ◽  
Qiunan Xu ◽  
Nitesh Kumar ◽  
Hsiang‐Hsi Kung ◽  
Sydney Dufresne ◽  
...  

2020 ◽  
Vol 4 (9) ◽  
Author(s):  
Nan Liu ◽  
Xuefan Niu ◽  
Yuxin Liu ◽  
Qinghua Zhang ◽  
Lin Gu ◽  
...  

2021 ◽  
Vol 551 ◽  
pp. 149390
Author(s):  
Weizhen Meng ◽  
Xiaoming Zhang ◽  
Weiwang Yu ◽  
Ying Liu ◽  
Lu Tian ◽  
...  

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