Model for passive mode locking in semiconductor lasers

2005 ◽  
Vol 72 (3) ◽  
Author(s):  
Andrei G. Vladimirov ◽  
Dmitry Turaev
2020 ◽  
Vol 1695 ◽  
pp. 012068
Author(s):  
D Auth ◽  
V V Korenev ◽  
A V Savelyev ◽  
M V Maximov ◽  
A E Zhukov ◽  
...  

Author(s):  
М.С. Буяло ◽  
И.М. Гаджиев ◽  
Н.Д. Ильинская ◽  
А.А. Усикова ◽  
И.И. Новиков ◽  
...  

AbstractWe present the results of an experimental study of two-section semiconductor lasers with active region consisting of three 3.1 nm InGaAs/InGaAlAs quantum wells. Passive mode-locking regime with a repetition rate of 10 GHz is realized. Different approaches have been compared to determine the stability of pulse repetition.


2014 ◽  
Vol 105 (16) ◽  
pp. 161101 ◽  
Author(s):  
R. Rosales ◽  
V. P. Kalosha ◽  
K. Posilović ◽  
M. J. Miah ◽  
D. Bimberg ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document