scholarly journals High brightness photonic band crystal semiconductor lasers in the passive mode locking regime

2014 ◽  
Vol 105 (16) ◽  
pp. 161101 ◽  
Author(s):  
R. Rosales ◽  
V. P. Kalosha ◽  
K. Posilović ◽  
M. J. Miah ◽  
D. Bimberg ◽  
...  
Keyword(s):  
Semiconductor Lasers ◽  
Mode Locking ◽  
Passive Mode ◽  
High Brightness ◽  
Photonic Band

Model for passive mode locking in semiconductor lasers

2005 ◽  
Vol 72 (3) ◽  
Author(s):  
Andrei G. Vladimirov ◽  
Dmitry Turaev
Keyword(s):  
Semiconductor Lasers ◽  
Mode Locking ◽  
Passive Mode

scholarly journals Passive mode-locking of p-doped quantum dot semiconductor lasers

2020 ◽  
Vol 1695 ◽  
pp. 012068
Author(s):  
D Auth ◽  
V V Korenev ◽  
A V Savelyev ◽  
M V Maximov ◽  
A E Zhukov ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Semiconductor Lasers ◽  
Mode Locking ◽  
Passive Mode

Novel types of photonic band crystal high power and high brightness semiconductor lasers

2016 ◽  
Vol 9 (2) ◽  
pp. 225-237 ◽  
Author(s):  
Md. Jarez Miah ◽  
Vladimir P. Kalosha ◽  
Ricardo Rosales ◽  
Dieter Bimberg
Keyword(s):  
Semiconductor Lasers ◽  
High Power ◽  
High Brightness ◽  
Photonic Band

scholarly journals Синхронизация мод в лазерах спектрального диапазона 1.55 mum на основе "тонких" квантовых ям

2018 ◽  
Vol 44 (4) ◽  
pp. 95
Author(s):  
М.С. Буяло ◽  
И.М. Гаджиев ◽  
Н.Д. Ильинская ◽  
А.А. Усикова ◽  
И.И. Новиков ◽  
...  
Keyword(s):  
Experimental Study ◽  
Active Region ◽  
Quantum Wells ◽  
Semiconductor Lasers ◽  
Repetition Rate ◽  
Mode Locking ◽  
Pulse Repetition ◽  
Passive Mode ◽  
The Stability

AbstractWe present the results of an experimental study of two-section semiconductor lasers with active region consisting of three 3.1 nm InGaAs/InGaAlAs quantum wells. Passive mode-locking regime with a repetition rate of 10 GHz is realized. Different approaches have been compared to determine the stability of pulse repetition.

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