Width of Resonance Process in Boron (11)

1945 ◽  
Vol 68 (9-10) ◽  
pp. 228-229 ◽  
Author(s):  
James F. Marvin
Keyword(s):  
Resonance Process

scholarly journals Resonance Raman Spectroscopy of Mn-Mgk Cation Complexes in GaN

Crystals ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 235 ◽  
Author(s):  
Andrii Nikolenko ◽  
Viktor Strelchuk ◽  
Bogdan Tsykaniuk ◽  
Dmytro Kysylychyn ◽  
Giulia Capuzzo ◽  
...  
Keyword(s):  
Relative Intensity ◽  
Resonance Raman Spectroscopy ◽  
Resonance Raman ◽  
Photonic Devices ◽  
Temperature Dependent ◽  
Raman Analysis ◽  
Electron Phonon Interaction ◽  
Resonance Enhancement ◽  
Resonance Process ◽  
Cation Complexes

Resonance Raman analysis is performed in order to gain insight into the nature of impurity-induced Raman features in GaN:(Mn,Mg) hosting Mn-Mgk cation complexes and representing a prospective strategic material for the realization of full-nitride photonic devices emitting in the infra-red. It is found that in contrast to the case of GaN:Mn, the resonance enhancement of Mn-induced modes at sub-band excitation in Mg co-doped samples is not observed at an excitation of 2.4 eV, but shifts to lower energies, an effect explained by a resonance process involving photoionization of a hole from the donor level of Mn to the valence band of GaN. Selective excitation within the resonance Raman conditions allows the structure of the main Mn-induced phonon band at ~670 cm−1 to be resolved into two distinct components, whose relative intensity varies with the Mg/Mn ratio and correlates with the concentration of different Mn-Mgk cation complexes. Moreover, from the relative intensity of the 2LO and 1LO Raman resonances at inter-band excitation energy, the Huang-Rhys parameter has been estimated and, consequently, the strength of the electron-phonon interaction, which is found to increase linearly with the Mg/Mn ratio. Selective temperature-dependent enhancement of the high-order multiphonon peaks is due to variation in resonance conditions of exciton-mediated outgoing resonance Raman scattering by detuning the band gap.

Contribution to the Dielectric Behavior of Relaxers from the Surface of Nano-Order Cluster in the Materials

1997 ◽  
Vol 492 ◽  
Author(s):  
Z. -Y. Cheng ◽  
Aqiang Guo ◽  
R. S. Katiyar
Keyword(s):  
Dielectric Constant ◽  
Relaxation Time ◽  
Frequency Dependence ◽  
Relaxor Ferroelectrics ◽  
Dielectric Behavior ◽  
Experimental Results ◽  
Time Analysis ◽  
Resonance Process

ABSTRACTBased on the analysis of the dielectric behavior of relaxor ferroelectrics, it is assumed that the material has two polarization processes. Thus, a formula, which can fit the experimental results very well, is proposed to describe the temperature and frequency dependence of the dielectric constant. The fitted results show that there is a resonance process in the material and the peak of the dielectric constant is determined with both the relaxation and resonance processes. The relaxation time analysis shows that the peak of the dielectric constant indeed consists of two parts.

Research on Wireless Power Transmission Based on Magnetic Resonance Coupling

2013 ◽  
Vol 811 ◽  
pp. 651-656
Author(s):  
Hao Wang ◽  
An Na Wang ◽  
Qiang Zhao ◽  
Yu Zhang
Keyword(s):  
Magnetic Field ◽  
Magnetic Resonance ◽  
Power Transmission ◽  
Coupled Mode Theory ◽  
Wireless Power ◽  
Wireless Power Transmission ◽  
Coupled Mode ◽  
Magnetic Resonance Coupling ◽  
Resonance Coupling ◽  
Resonance Process

e. The formalism of wireless power transmission is discussed coupled mode theory can be used to describe the resonance process. According to the changing process of input impedance and input current to describe the demarcate of resonant frequency. also demonstrate that loop circuits have an important effect of the resonant magnetic field distribution.

Diagnostic measurements of CUEBIT based on the dielectronic resonance process

2015 ◽  
Author(s):  
E. Takacs ◽  
T. D. Kimmel ◽  
K. H. Brandenburg ◽  
R. K. Wilson ◽  
A. C. Gall ◽  
...  
Keyword(s):  
Resonance Process

Formation of a Cesium Plasma by Continuous-Wave Resonance Excitation

2000 ◽  
Vol 54 (8) ◽  
pp. 1245-1249 ◽  
Author(s):  
Dimitri Pappas ◽  
Benjamin W. Smith ◽  
Nicolo Omenettó ◽  
James D. Winefordner
Keyword(s):  
Radiative Decay ◽  
Continuous Wave ◽  
Nonlinear Behavior ◽  
Optical Emission ◽  
Resonance Excitation ◽  
Number Density ◽  
Charge Coupled Device ◽  
Wave Resonance ◽  
Cesium Plasma ◽  
Resonance Process

The generation of a plasma in cesium vapor via a resonance process is described. The maximum irradiance used was 1.5 W/cm2, which is several orders of magnitude lower than the irradiances conventionally used to form plasmas. Plasma emission consisted of radiative decay from excited-state Cs atoms. Optical emission from the plasma was observed from laser powers of 200 μW with a nonintensified charge-coupled device (CCD). The ionization efficiency of the plasma was approximately 0.001, with the majority of the atoms in the plasma ionized. The plasma was found to behave linearly with respect to laser power; however nonlinear behavior was observed as the number density was altered. A collisional mechanism is proposed for the formation of the plasma.

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