Contact Potential Difference between Iron and Nickel and their Photoelectric Work Functions

1931 ◽  
Vol 38 (8) ◽  
pp. 1490-1496 ◽  
Author(s):  
G. Norris Glasoe
Keyword(s):  
Contact Potential Difference ◽  
Potential Difference ◽  
Contact Potential ◽  
Work Functions

scholarly journals The measurement of contact potential difference

1936 ◽  
Vol 155 (885) ◽  
pp. 218-234 ◽  
Keyword(s):  
Work Function ◽  
Metal Surfaces ◽  
Contact Potential Difference ◽  
Potential Difference ◽  
Peltier Effect ◽  
Dissimilar Metals ◽  
Theoretical Relation ◽  
Contact Potential ◽  
Work Functions ◽  
Clean Metal

A number of measurements of the contact potential difference between pairs of dissimilar metals has been made during the last few years. The interest and importance of such measurements arise chiefly in connexion with the theoretical relation which exists between the contact potential difference and the work functions of the surfaces considered. This relation, due to Richardson, may be written V c = Φ 1 - Φ 2 + P, (1) where P is a correction for the Peltier effect which, in practice, is negligibly small. If Φ 2 > Φ 1 , the sign of V c will be such that surface 1 is positive with respect to surface 2. It has been pointed out by Compton and Langmuir that equation (1) cannot hold for surfaces which are not homogeneous, since contact potential measurements would yield average values for the whole surfaces, while the magnitude of the work function, measured either by the photoelectric or the thermionic method, would be determined principally by the most electropositive portions of the surface. Farnsworth and Rose have shown that these considerations may apply even for clean metal surfaces, since recent measurements by Rose§ indicate that comparatively large contact potential differences may exist between different faces of crystals of the same metal, so that polycrystalline surfaces cannot necessarily be considered as homogeneous.

scholarly journals Coupled Investigation of Contact Potential and Microstructure Evolution of Ultra-Thin AlOx for Crystalline Si Passivation

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1803
Author(s):  
Zhen Zheng ◽  
Junyang An ◽  
Ruiling Gong ◽  
Yuheng Zeng ◽  
Jichun Ye ◽  
...  
Keyword(s):  
Structural Changes ◽  
Silicon Oxide ◽  
Crystalline Silicon ◽  
Contact Potential Difference ◽  
Potential Difference ◽  
Kelvin Probe ◽  
Contact Potential ◽  
Carrier Lifetimes ◽  
Transmission Electron ◽  
Effective Carrier

In this work, we report the same trends for the contact potential difference measured by Kelvin probe force microscopy and the effective carrier lifetime on crystalline silicon (c-Si) wafers passivated by AlOx layers of different thicknesses and submitted to annealing under various conditions. The changes in contact potential difference values and in the effective carrier lifetimes of the wafers are discussed in view of structural changes of the c-Si/SiO2/AlOx interface thanks to high resolution transmission electron microscopy. Indeed, we observed the presence of a crystalline silicon oxide interfacial layer in as-deposited (200 °C) AlOx, and a phase transformation from crystalline to amorphous silicon oxide when they were annealed in vacuum at 300 °C.

Determination of the local contact potential difference of PTCDA on NaCl: a comparison of techniques

2009 ◽  
Vol 20 (26) ◽  
pp. 264012 ◽  
Author(s):  
S A Burke ◽  
J M LeDue ◽  
Y Miyahara ◽  
J M Topple ◽  
S Fostner ◽  
...  
Keyword(s):  
Contact Potential Difference ◽  
Potential Difference ◽  
Contact Potential ◽  
Local Contact ◽  
Comparison Of Techniques
Sign in / Sign up

Export Citation Format

Share Document