Uniaxial-Stress Effects on the Emission Bands of KI: Tl Phosphor

1969 ◽  
Vol 187 (3) ◽  
pp. 1089-1098 ◽  
Author(s):  
T. Shimada ◽  
M. Ishiguro
2011 ◽  
Vol 58 (8) ◽  
pp. 2597-2603 ◽  
Author(s):  
Ling Xia ◽  
Vadim Tokranov ◽  
Serge R. Oktyabrsky ◽  
Jesús A. del Alamo

Author(s):  
M. Namkung ◽  
R. DeNale ◽  
P.W. Kushnick ◽  
J.L. Grainger ◽  
R.G. Todhunter

1985 ◽  
Vol 46 ◽  
Author(s):  
Keon M. Lee ◽  
J. M. Trombetta ◽  
G. D. Watkins

AbstractThe effect of uniaxial stress on the NL8 EPR spectrum in 450°C heattreated silicon containing thermal donors (TD's) is described. Changes in the relative amplitudes of the NL8 spectral components are interpreted as arising from electronic redistribution between the differently oriented defects. These changes are consistent in sign and magnitude with those predicted for TD+ from observed stress effects on the TD IR and DLTS spectra.


1998 ◽  
Vol 84 (7) ◽  
pp. 3741-3746 ◽  
Author(s):  
A. K. Fung ◽  
J. D. Albrecht ◽  
M. I. Nathan ◽  
P. P. Ruden ◽  
H. Shtrikman

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