Donor-Gallium vacancy complex in GaP

1981 ◽  
Vol 51 (4) ◽  
pp. 441-448
Author(s):  
P. Krispin
1996 ◽  
Vol 1 (1) ◽  
pp. 209-215
Author(s):  
N. S. Averkiev ◽  
A. A. Gutkin ◽  
S. Yu. Il’inskii ◽  
M. A. Reshchikov ◽  
V. E. Sedov

1995 ◽  
Vol 395 ◽  
Author(s):  
X. Zhang ◽  
P. Kung ◽  
D. Walker ◽  
A. Saxler ◽  
M. Razeghi

ABSTRACTWe report the growth and photoluminescence characterization of GaN grown on different substrates and under different growth conditions using metalorganic chemical vapor deposition. The deep-level yellow luminescence centered at around 2.2eV is attributed to native defect, most possibly the gallium vacancy. The yellow luminescence can be substantially reduced By growing GaN under Ga-rich condition or doping GaN with Ge or Mg.


1994 ◽  
Vol 65 (6) ◽  
pp. 746-748 ◽  
Author(s):  
K. Kuriyama ◽  
K. Tomizawa ◽  
S. Uematsu ◽  
Hirokazu Takahashi

1986 ◽  
Vol 34 (1) ◽  
pp. 502-505 ◽  
Author(s):  
Gary S. Collins ◽  
Reinhardt B. Schuhmann
Keyword(s):  

Pramana ◽  
2022 ◽  
Vol 96 (1) ◽  
Author(s):  
Xueqiong Dai ◽  
Jianrong Xiao ◽  
Liang Xu ◽  
Zhiyong Wang

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