scholarly journals Two-Dimensional Mapping of 3D Data from Confocal Microscopy

2015 ◽  
Author(s):  
Anthony Fan ◽  
Justin Cassidy ◽  
Richard W. Carthew ◽  
Sascha Hilgenfeldt
Keyword(s):  
Image Analysis ◽  
Confocal Microscopy ◽  
Unique Property ◽  
Biological Research ◽  
Two Dimensional ◽  
High Quality ◽  
3D Data ◽  
Fast Solution ◽  
2D Space ◽  
Dimensional Mapping

Confocal microscopy has been experimentally proven for decades to provide high-quality images for biological research. Its unique property of blocking out-of-focus light enables 3D rendering from planar stacks and visualization of internal features. However, visualizing 3D data on a flat display is not intuitive, and would lead to occasional distortion. In this study, a novel, easy-to-implement, and computationally fast solution is provided to reconstruct a confocal stack to true 3D data and subsequently map the information correctly with size and shape consistency to a 2D space for visualization and image analysis purposes.

scholarly journals High performance self-powered photodetector based on 1D Te-2D WS2 mixed-dimensional heterostructure

2021 ◽  
Author(s):  
Lixiang Han ◽  
Mengmeng Yang ◽  
Peiting Wen ◽  
Wei Gao ◽  
nengjie huo ◽  
...  
Keyword(s):  
High Performance ◽  
Van Der Waals ◽  
Sharp Interface ◽  
Two Dimensional ◽  
High Quality ◽  
One Dimensional ◽  
Self Powered

One dimensional (1D)-two dimensional (2D) van der Waals (vdWs) mixed-dimensional heterostructures with advantages of atomically sharp interface, high quality and good compatibility have attracted tremendous attention in recent years. The...

scholarly journals Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 928
Author(s):  
Yong Du ◽  
Zhenzhen Kong ◽  
Muhammet Toprak ◽  
Guilei Wang ◽  
Yuanhao Miao ◽  
...  
Keyword(s):  
High Temperature ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Growth Temperature ◽  
Crystalline Quality ◽  
Initial Growth ◽  
Two Dimensional ◽  
High Quality ◽  
Reduced Pressure

This work presents the growth of high-quality Ge epilayers on Si (001) substrates using a reduced pressure chemical vapor deposition (RPCVD) chamber. Based on the initial nucleation, a low temperature high temperature (LT-HT) two-step approach, we systematically investigate the nucleation time and surface topography, influence of a LT-Ge buffer layer thickness, a HT-Ge growth temperature, layer thickness, and high temperature thermal treatment on the morphological and crystalline quality of the Ge epilayers. It is also a unique study in the initial growth of Ge epitaxy; the start point of the experiments includes Stranski–Krastanov mode in which the Ge wet layer is initially formed and later the growth is developed to form nuclides. Afterwards, a two-dimensional Ge layer is formed from the coalescing of the nuclides. The evolution of the strain from the beginning stage of the growth up to the full Ge layer has been investigated. Material characterization results show that Ge epilayer with 400 nm LT-Ge buffer layer features at least the root mean square (RMS) value and it’s threading dislocation density (TDD) decreases by a factor of 2. In view of the 400 nm LT-Ge buffer layer, the 1000 nm Ge epilayer with HT-Ge growth temperature of 650 °C showed the best material quality, which is conducive to the merging of the crystals into a connected structure eventually forming a continuous and two-dimensional film. After increasing the thickness of Ge layer from 900 nm to 2000 nm, Ge surface roughness decreased first and then increased slowly (the RMS value for 1400 nm Ge layer was 0.81 nm). Finally, a high-temperature annealing process was carried out and high-quality Ge layer was obtained (TDD=2.78 × 107 cm−2). In addition, room temperature strong photoluminescence (PL) peak intensity and narrow full width at half maximum (11 meV) spectra further confirm the high crystalline quality of the Ge layer manufactured by this optimized process. This work highlights the inducing, increasing, and relaxing of the strain in the Ge buffer and the signature of the defect formation.

scholarly journals Fabricating centimeter-scale high quality factor two-dimensional periodic photonic crystal slabs

2014 ◽  
Vol 22 (3) ◽  
pp. 3724 ◽  
Author(s):  
Jeongwon Lee ◽  
Bo Zhen ◽  
Song-Liang Chua ◽  
Ofer Shapira ◽  
Marin Soljačić
Keyword(s):  
Photonic Crystal ◽  
Quality Factor ◽  
High Quality Factor ◽  
Two Dimensional ◽  
High Quality ◽  
Photonic Crystal Slabs

RETRACTED: High quality N-polar GaN two-dimensional growth on c-plane sapphire by metalorganic vapor phase epitaxy

2013 ◽  
Vol 366 ◽  
pp. 35-38 ◽  
Author(s):  
Yuantao Zhang ◽  
Xin Dong ◽  
Guoxing Li ◽  
Wancheng Li ◽  
Baolin Zhang ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Two Dimensional ◽  
High Quality ◽  
Dimensional Growth

Two-Dimensional MEMS Scanner for Dual-Axes Confocal Microscopy

2007 ◽  
Vol 16 (4) ◽  
pp. 969-976 ◽  
Author(s):  
Hyejun Ra ◽  
Wibool Piyawattanametha ◽  
Yoshihiro Taguchi ◽  
Daesung Lee ◽  
Michael J. Mandella ◽  
...  
Keyword(s):  
Confocal Microscopy ◽  
Two Dimensional

scholarly journals Elastic Moduli of Collagen Gels Can Be Predicted from Two-Dimensional Confocal Microscopy

2009 ◽  
Vol 97 (7) ◽  
pp. 2051-2060 ◽  
Author(s):  
Ya-li Yang ◽  
Lindsay M. Leone ◽  
Laura J. Kaufman
Keyword(s):  
Confocal Microscopy ◽  
Elastic Moduli ◽  
Two Dimensional ◽  
Collagen Gels

Synthesis of centimeter-scale high-quality polycrystalline hexagonal boron nitride films from the Fe flux

Nanoscale ◽  
2021 ◽  
Author(s):  
Yifei Li ◽  
Xin Wen ◽  
Changjie Tan ◽  
Ning Li ◽  
Ruijie Li ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Two Dimensional ◽  
High Quality ◽  
Boron Nitride Films

Owing to its irreplaceable roles in new functional devices, such as universal substrates and excellent layered insulators, high-quality hexagonal BN (hBN) crystals are exceedingly required in the field of two-dimensional...

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